Display device and method for manufacturing the same
A first organic resin layer is formed over a first substrate; a first insulating film is formed over the first organic resin layer; a first element layer is formed over the first insulating film; a second organic resin layer is formed over a second substrate; a second insulating film is formed over the second organic resin layer; a second element layer is formed over the second insulating film; the first substrate and the second substrate are bonded; a first separation step in which adhesion between the first organic resin layer and the first substrate is reduced; the first organic resin layer and a first flexible substrate are bonded with a first bonding layer; a second separation step in which adhesion between the second organic resin layer and the second substrate is reduced; and the second organic resin layer and a second flexible substrate are bonded with a second bonding layer.
1. A linear beam irradiation apparatus for peeling an element layer provided over an upper surface side of a substrate from the substrate, the linear beam irradiation apparatus comprising:
a laser device outputting a laser light;
an optical system extending the laser light;
a mirror reflecting the laser light; and
a lens forming a linear beam by condensing the laser light,
wherein the substrate and the element layer are configured to be moved below the lens while a lower surface side of the substrate is faced upward.
2. The linear beam irradiation apparatus according to claim 1 , wherein the substrate and the element layer are configured to be moved so that an entire part or a necessary part of the substrate is irradiated with the linear beam.
3. The linear beam irradiation apparatus according to claim 1 , wherein the substrate and the element layer are configured to be moved in parallel with a short axis direction of the linear beam.
4. The linear beam irradiation apparatus according to claim 1 , wherein the linear beam is equal or longer than one side of the substrate.
5. The linear beam irradiation apparatus according to claim 1 , wherein a wavelength of the laser light is 308 nm or longer.
6. A linear beam irradiation apparatus for peeling an element layer provided over an upper surface side of a substrate from the substrate, the linear beam irradiation apparatus comprising:
a laser device including a plurality of laser oscillators;
an optical system synthesizing a laser light output from each of the plurality of laser oscillators and extending the laser light;
a mirror reflecting the laser light; and
a lens forming a linear beam by condensing the laser light,
wherein the substrate and the element layer are configured to be moved below the lens while a lower surface side of the substrate is faced upward.
7. The linear beam irradiation apparatus according to claim 6 , wherein the substrate and the element layer are configured to be moved so that an entire part or a necessary part of the substrate is irradiated with the linear beam.
8. The linear beam irradiation apparatus according to claim 6 , wherein the substrate and the element layer are configured to be moved in parallel with a short axis direction of the linear beam.
9. The linear beam irradiation apparatus according to claim 6 , wherein the linear beam is equal or longer than one side of the substrate.
10. The linear beam irradiation apparatus according to claim 6 , wherein a wavelength of the laser light is 308 nm or longer.
11. A linear beam irradiation apparatus for peeling an element layer provided over an upper surface side of a substrate from the substrate, the linear beam irradiation apparatus comprising:
a laser device outputting a laser light;
an optical system extending the laser light;
a mirror reflecting the laser light; and
a lens forming a linear beam by condensing the laser light,
wherein the substrate and the element layer are configured to be moved below the lens while a lower surface side of the substrate is faced upward and the substrate is kept flat.
12. The linear beam irradiation apparatus according to claim 11 , wherein the substrate and the element layer are configured to be moved so that an entire part or a necessary part of the substrate is irradiated with the linear beam.
13. The linear beam irradiation apparatus according to claim 11 , wherein the substrate and the element layer are configured to be moved in parallel with a short axis direction of the linear beam.
14. The linear beam irradiation apparatus according to claim 11 , wherein the linear beam is equal or longer than one side of the substrate.
15. The linear beam irradiation apparatus according to claim 11 , wherein a wavelength of the laser light is 308 nm or longer.