Reinforced semiconductor die and related methods
Implementations of methods of forming a plurality of reinforced die may include forming a plurality of die on a substrate and patterning a metal gang frame to form a plurality of metal plates. The plurality of metal plates may correspond to the plurality of die. The method may include coupling the metal gang frame over the plurality of die and singulating the plurality of die. Each die of the plurality of die may include the corresponding metal plate from the plurality of metal plates coupled over the plurality of die.
1. A reinforced semiconductor substrate comprising:
a patterned metal gang frame comprising a plurality of metal plates, the plurality of metal plates coupled to a first surface of a substrate over a plurality of die coupled to the substrate; and
wherein each metal plate of the plurality of metal plates is coupled to at least one die of the plurality of die.
2. The substrate of claim 1 , wherein the substrate is less than 75 micrometers thick.
3. The substrate of claim 1 , further comprising a base plate coupled to a second surface of the substrate, wherein the second surface is opposite the first surface.
4. The substrate of claim 1 , further comprising one of a solder or a silver sinter coupled between the patterned metal gang frame and the substrate.
5. The substrate of claim 1 , wherein the patterned metal gang frame comprises copper.
6. The substrate of claim 1 , wherein the plurality of metal plates is directly coupled to the first surface of the substrate using an adhesive.
7. The substrate of claim 1 , further comprising a plurality of tie bars coupling the plurality of metal plates to one another.
8. A reinforced semiconductor substrate comprising:
a patterned gang frame comprising a plurality of metal plates, the plurality of metal plates coupled to a first surface of a substrate over a plurality of die coupled to the substrate; and
wherein each metal plate of the plurality of metal plates is coupled to at least one die of the plurality of die.
9. The substrate of claim 8 , wherein the plurality of die comprises a plurality of insulated gate bipolar transistors.
10. The substrate of claim 8 , wherein the substrate is less than 75 micrometers thick.
11. The substrate of claim 8 , further comprising a base plate coupled to a second surface of the substrate, wherein the second surface is opposite the first surface.
12. The substrate of claim 8 , wherein the plurality of metal plates is directly coupled to the first surface of the substrate using an adhesive.
13. The substrate of claim 8 , wherein each die of the plurality of die includes one or fewer metal plates of the plurality of metal plates coupled directly over each die.
14. A reinforced semiconductor substrate comprising:
a patterned gang frame comprising a plurality of metal plates coupled together through a plurality of tie bars, the plurality of metal plates coupled to a first surface of a substrate over a plurality of die coupled to the substrate; and
wherein each metal plate of the plurality of metal plates is coupled to at least one die of the plurality of die.
15. The substrate of claim 14 , wherein the plurality of die comprises a plurality of insulated gate bipolar transistors.
16. The substrate of claim 14 , wherein the substrate is less than 75 micrometers thick.
17. The substrate of claim 14 , further comprising a base plate coupled to a second surface of the substrate, wherein the second surface is opposite the first surface.
18. The substrate of claim 14 , wherein the patterned gang frame comprises copper.
19. The substrate of claim 14 , wherein the plurality of metal plates is directly coupled to the first surface of the substrate using an adhesive.
20. The substrate of claim 14 , wherein the patterned gang frame comprises an electrically conductive non-metal material.