Electrostatic discharge circuit using booster cell
An electrostatic discharge (ESD) circuit including a booster cell is disclosed. The ESD circuit may include first and second rails configured to provide power to the ESD circuit. The first rail may include two spaced apart conductors. The ESD circuit may further include an input/output (I/O) pad and a power/ground (P/G) pad. The P/G pad may include a power clamp electrically coupled between the first and second rails. The booster cell may be physically located between the I/O pad and the P/G pad. The booster cell may provide an electrical connection between the two spaced apart conductors.
1. An electrostatic discharge (ESD) circuit, comprising:
first and second rails configured to provide power to the ESD circuit, the first rail comprising two spaced apart conductors;
an input/output (I/O) pad;
a power/ground (P/G) pad comprising a power clamp electrically coupled between the first and second rails; and
a booster cell physically located between the I/O pad and the P/G pad, wherein the booster cell provides an electrical connection that directly couples the two spaced apart conductors, the electrical connection configured to short the two spaced apart conductors,
wherein the electrical connection provided by the booster cell comprises a plurality of parallel electrical connections stacked within the booster cell.
2. An electrostatic discharge (ESD) circuit, comprising:
first and second rails configured to provide power to the ESD circuit, the first rail comprising two spaced apart conductors;
a power/ground (P/G) pad having a width, wherein the P/G pad comprises a power clamp electrically coupled between the first and second rails; and
a booster cell providing an electrical connection that directly couples the two spaced apart conductors, the booster cell having a width less than the width of the P/G pad, the electrical connection configured to short the two spaced apart conductors,
wherein the electrical connection provided by the booster cell comprises a plurality of parallel electrical connections stacked within the booster cell.