Zone allocation for data storage device based on zone reset behavior
A memory controller includes, in one implementation, a host interface, a memory interface, and a flash translation layer (FTL). The FTL is configured to receive a request from a host device to store data in a zone of a solid-state memory. The FTL is also configured to determine a zone reset rate classification as one of a hot classification, a cold classification, and a normal classification. The FTL is further configured to allocate the zone to a memory die with the fewest free die blocks when the zone reset rate classification is the hot classification. The FTL is also configured to allocate the zone to a memory die with the most free die blocks when the zone reset rate classification is the cold classification. The FTL is further configured to send the data to the memory die for storage therein.
1. A memory controller, comprising:
a host interface configured to interface with a host device;
a memory interface configured to interface with a solid-state memory; and
a flash translation layer coupled to the host interface and the memory interface, wherein the flash translation layer is configured to:
receive a request from the host device by way of the host interface to store data in a zone of the memory,
determine a zone reset rate classification for the zone as one of a hot classification, a cold classification, and a normal classification, the zone reset rate classification indicating an invalidation rate of the data stored in the zone,
allocate the zone to a die in the memory based on the zone reset rate classification, wherein the zone is allocated to the die with fewest free die blocks when the zone reset rate classification is the hot classification, and wherein the zone is allocated to the die with most free die blocks when the zone reset rate classification is the cold classification, and
send the data to the die in the memory by way of the memory interface for storage in the memory.
2. The memory controller of claim 1 , wherein, to determine the zone reset rate classification, the flash translation layer is further configured to:
increment a zone reset counter each time the zone is reset,
classify the zone with the hot classification when the zone reset counter is greater than a hot threshold,
classify the zone with the cold classification when the zone reset counter is less than a cold threshold, and
classify the zone with the normal classification when the zone reset counter is between the hot threshold and the cold threshold.
3. The memory controller of claim 2 , wherein the flash translation layer is further configured to determine the hot threshold and the cold threshold based on a total number of zone resets for the memory.
4. The memory controller of claim 1 , wherein, to determine the zone reset rate classification, the flash translation layer is further configured to:
increment a zone reset counter each time the zone is reset,
scale the zone reset counter based on a total number of zone resets for the memory to generate a scaled zone reset counter,
classify the zone with the hot classification when the scaled zone reset counter is greater than a hot threshold,
classify the zone with the cold classification when the scaled zone reset counter is less than a cold threshold, and
classify the zone with the normal classification when the scaled zone reset counter is between the hot threshold and the cold threshold.
5. The memory controller of claim 1 , wherein, to determine the zone reset rate classification, the flash translation layer is further configured to determine the zone reset rate classification based on an indication received from the host device.
6. The memory controller of claim 5 , wherein the flash translation layer receives the indication from the host device when the zone is opened.
7. The memory controller of claim 6 , wherein the zone is allocated to any die in the memory with free die blocks when the zone reset rate classification is the normal classification.
8. A method, comprising:
receiving a request from a host device to store data in a zone of a solid-state memory;
determining, with a flash translation layer, a zone reset rate classification for the zone as one of a hot classification, a cold classification, and a normal classification;
allocating, with the flash translation layer, the zone to a die in the memory based on the zone reset rate classification, wherein the zone is allocated to the die with fewest free die blocks when the zone reset rate classification is the hot classification, the zone reset rate classification indicating an invalidation rate of the data stored in the zone, and wherein the zone is allocated to the die with most free die blocks when the zone reset rate classification is the cold classification; and
sending the data to the die in the memory for storage therein.
9. The method of claim 8 , wherein determining the zone reset rate classification further includes:
incrementing a zone reset counter each time the zone is reset,
classifying the zone with the hot classification when the zone reset counter is greater than a hot threshold,
classifying the zone with the cold classification when the zone reset counter is less than a cold threshold, and
classifying the zone with the normal classification when the zone reset counter is between the hot threshold and the cold threshold.
10. The method of claim 9 , further comprising determining, with the flash translation layer, the hot threshold and the cold threshold based on a total number of zone resets for the memory.
11. The method of claim 8 , wherein determining the zone reset rate classification further includes:
incrementing a zone reset counter each time the zone is reset,
scaling the zone reset counter based on a total number of zone resets for the memory to generate a scaled zone reset counter,
classifying the zone with the hot classification when the scaled zone reset counter is greater than a hot threshold,
classifying the zone with the cold classification when the scaled zone reset counter is less than a cold threshold, and
classifying the zone with the normal classification when the scaled zone reset counter is between the hot threshold and the cold threshold.
12. The method of claim 8 , wherein determining the zone reset rate classification further includes determining the zone reset rate classification based on an indication received from the host device.
13. The method of claim 12 , wherein the indication is received from the host device when the zone is opened.
14. The method of claim 8 , wherein the zone is allocated to any die in the memory with free die blocks when the zone reset rate classification is the normal classification.
15. An apparatus, comprising:
means for receiving a request from a host device to store data in a zone of a solid-state memory;
means for determining a zone reset rate classification for the zone as one of a hot classification, a cold classification, and a normal classification the zone reset rate classification indicating an invalidation rate of the data stored in the zone;
means for allocating the zone to a die in the memory based on the zone reset rate classification, wherein the zone is allocated to the die with fewest free die blocks when the zone reset rate classification is the hot classification, and wherein the zone is allocated to the die with most free die blocks when the zone reset rate classification is the cold classification; and
means for sending the data to the die in the memory for storage therein.
16. The apparatus of claim 15 , wherein the means for determining the zone reset rate classification is further configured to:
increment a zone reset counter each time the zone is reset,
classify the zone with the hot classification when the zone reset counter is greater than a hot threshold,
classify the zone with the cold classification when the zone reset counter is less than a cold threshold, and
classify the zone with the normal classification when the zone reset counter is between the hot threshold and the cold threshold.
17. The apparatus of claim 16 , further comprising means for determining the hot threshold and the cold threshold based on a total number of zone resets for the memory.
18. The apparatus of claim 15 , wherein the means for determining the zone reset rate classification is further configured to:
increment a zone reset counter each time the zone is reset,
scale the zone reset counter based on a total number of zone resets for the memory to generate a scaled zone reset counter,
classify the zone with the hot classification when the scaled zone reset counter is greater than a hot threshold,
classify the zone with the cold classification when the scaled zone reset counter is less than a cold threshold, and
classify the zone with the normal classification when the scaled zone reset counter is between the hot threshold and the cold threshold.
19. The apparatus of claim 15 , wherein the means for determining the zone reset rate classification is further configured to determine the zone reset rate classification based on an indication received from the host device.
20. The apparatus of claim 15 , wherein the means for allocating the zone is further configured to allocate the zone to any die in the memory with free die blocks when the zone reset rate classification is the normal classification.