Memory controller for resolving string to string shorts
A memory controller includes, in one embodiment, a memory interface and a controller circuit. The memory interface is configured to interface with a memory interface configured to interface with a memory having a plurality of memory blocks. Each memory block has a plurality of strings. The controller circuit is configured to perform a string defect leakage check on one of the memory blocks during a first programming operation of the one memory block, determine whether the one memory block has one or more string to string shorts based on the string defect leakage check, and resolve the string to string shorts in response to determining that the one of the memory blocks has the string to string shorts.
1. A memory controller comprising:
a memory interface configured to interface with a memory having a plurality of memory blocks, each memory block having a plurality of strings; and
a controller circuit configured to:
perform a string defect leakage check on one memory block of the plurality of memory blocks during a first programming operation of the one memory block,
determine whether the one memory block has one or more string to string shorts based on the string defect leakage check, and
resolve the one or more string to string shorts in response to determining that the one memory block has the one or more string to string shorts,
wherein, to resolve the one or more string to string shorts, the controller circuit is further configured to:
update defective string information of the one memory block, and
disable defective strings of the one memory block.
2. The memory controller of claim 1 , wherein, to resolve the one or more string to string shorts, the controller circuit is further configured to retire the one memory block from programming operations.
3. The memory controller of claim 2 , further comprising a second memory that includes an available memory regions data structure,
wherein, to retire the one memory block from the programming operations, the controller circuit is further configured to remove the one memory block from the available memory regions data structure.
4. The memory controller of claim 1 , wherein, to resolve the one or more string to string shorts, the controller circuit is further configured to:
disable the defective strings of the one memory block during a second programming operation of the one memory block.
5. The memory controller of claim 1 , further comprising:
a second memory that stores the defective string information in a lookup table,
wherein, to update the defective string information of the one memory block, the controller circuit is further configured to update string information of the one memory block in the lookup table to include information of one or more strings in the one memory block that have the one or more string to string shorts.
6. The memory controller of claim 5 , wherein the second memory includes an available memory regions data structure,
wherein, to disable the defective strings of the one memory block during the programming operation of the one memory block, the controller circuit is further configured to:
retrieve the string information of the one memory block from the lookup table during the programming operation of the one memory block, and
remove one or more strings of the one memory block from the available memory regions data structure based on the string information of the one memory block that is retrieved from the lookup table.
7. The memory controller of claim 1 , wherein, to perform the string defect leakage check, the controller circuit is further configured to:
apply a high bias to different neighboring string pairs in the one memory block and a low bias to all other strings in the one memory block, and
detect a leakage current in the different neighboring string pairs while applying the high bias to the different neighboring string pairs,
wherein a detection of the leakage current in one or more of the different neighboring string pairs while applying the high bias to the different neighboring string pairs is indicative of a string to string short in the one or more of the different neighboring string pairs.
8. The memory controller of claim 1 , wherein, to perform the string defect leakage check, the controller circuit is further configured to:
apply a first high bias to even strings and a first low bias to odd strings,
detect a first leakage current in any of the even strings while applying the first high bias to the even strings,
apply a second high bias to the odd strings and a second low bias to the even strings, and
detect a second leakage current in any of the odd strings while applying the second high bias to the odd strings,
wherein a detection of the first leakage current in one of the even strings while applying the first high bias to the even strings is indicative of a string to string short in the one of the even strings, and
wherein a detection of the second leakage current in one of the odd strings while applying the second high bias to the odd strings is indicative of a string to string short in the one of the odd strings.
9. The memory controller of claim 1 , wherein the one memory block is a single word line.
10. The memory controller of claim 1 , wherein, to resolve the one or more string to string shorts, the controller circuit is further configured to: disable only the defective strings of the one memory block.
11. A method, comprising:
performing, with a controller circuit, a string defect leakage check on one memory block of a memory during a first programming operation of the one memory block;
determining, with the controller circuit, whether the one memory block has one or more string to string shorts based on the string defect leakage check; and
resolving, with the controller circuit, the one or more string to string shorts in response to determining that the one memory block has the one or more string to string shorts,
wherein resolving the one or more string to string shorts further includes:
updating defective string information of the one memory block, and
disabling defective strings of the one memory block.
12. The method of claim 11 , wherein resolving the one or more string to string shorts further includes retiring the one memory block from programming operations.
13. The method of claim 12 , wherein retiring the one memory block from the programming operations further includes removing the one memory block from an available memory regions data structure.
14. The method of claim 11 , wherein disabling the defective strings of the one memory block further includes:
disabling the defective strings of the one memory block during a second programming operation of the one memory block.
15. The method of claim 11 , wherein updating defective string information of the one memory block further includes updating string information of the one memory block in a lookup table to include information of one or more strings in the one memory block that have the one or more string to string shorts.
16. The method of claim 15 , wherein disabling the defective strings of the one memory block during the programming operation of the one memory block further includes:
retrieving the string information of the one memory block from the lookup table during the programming operation of the one memory block, and
removing one or more strings of the one memory block from an available memory regions data structure based on the string information of the one memory block that is retrieved from the lookup table.
17. The method of claim 11 , wherein performing the string defect leakage check further includes:
applying a high bias to different neighboring string pairs in the one memory block and a low bias to all other strings in the one memory block, and
detecting a leakage current in the different neighboring string pairs while applying the high bias to the different neighboring string pairs,
wherein a detection of the leakage current in one or more of the different neighboring string pairs while applying the high bias to the different neighboring string pairs is indicative of a string to string short in the one or more of the different neighboring string pairs.
18. The method of claim 11 , wherein performing the string defect leakage check further includes:
applying a first high bias to even strings and a first low bias to odd strings,
detecting a first leakage current in any of the even strings while applying the first high bias to the even strings,
applying a second high bias to the odd strings and a second low bias to the even strings, and
detecting a second leakage current in any of the odd strings while applying the second high bias to the odd strings,
wherein a detection of the first leakage current in one of the even strings while applying the first high bias to the even strings is indicative of a string to string short in the one of the even strings, and
wherein a detection of the second leakage current in one of the odd strings while applying the second high bias to the odd strings is indicative of a string to string short in the one of the odd strings.
19. An apparatus comprising:
means for performing a string defect leakage check on one memory block during a first programming operation of the one memory block;
means for determining whether the one memory block has one or more string to string shorts based on the string defect leakage check; and
means for resolving the one or more string to string shorts in response to determining that the one memory block has the one or more string to string shorts,
wherein the means for resolving the one or more string to string shorts further includes:
means for updating defective string information of the one memory block, and
means for disabling defective strings of the one memory block.
20. The apparatus of claim 19 , wherein the means for resolving the one or more string to string shorts further includes means for retiring the one memory block from programming operations.
21. The apparatus of claim 19 , wherein the means for disabling the defective strings of the one memory block further includes:
means for disabling the defective strings of the one memory block during a second programming operation of the one memory block.
22. The apparatus of claim 19 , wherein the means for updating defective string information of the one memory block further includes means for updating string information of the one memory block in a lookup table to include information of one or more strings in the one memory block that have the one or more string to string shorts.