Memory array containing capped aluminum access lines and method of making the same
A cross-point memory device includes first conductive line structures laterally extending along a first horizontal direction, an array of memory pillar structures overlying top surfaces of the first conductive line structures, such that each of the memory pillar structures includes a respective memory element, and second conductive line structures laterally extending along a second horizontal direction and overlying top surfaces of the array of memory pillar structures. At least one of the first conductive line structures and the second conductive line structures each includes a respective aluminum-containing rail and a respective metallic cap strip in contact with a top surface of the respective aluminum-containing rail.
1. A method of forming a cross-point memory device, comprising:
forming a set of first conductive line structures laterally extending along a first horizontal direction over a substrate;
forming memory-level material layers over the set of first conductive line structures;
forming a set of second conductive line structures laterally extending along a second horizontal direction over top surfaces of the array of memory pillar structures; and
patterning the memory-level material layers into an array of memory pillar structures,
wherein:
each of the memory pillar structures comprises a respective memory element and
both of the first conductive line structures and the second conductive line structures each comprise a respective aluminum-containing rail and a respective metallic cap strip in contact with a top surface of the respective aluminum-containing rail;
wherein both of the first conductive line structures and the second conductive line structures are formed by:
depositing a layer stack including, from bottom to top, an aluminum layer and a refractory metal or a refractory metal alloy metallic cap material layer; and
patterning the layer stack into the set of conductive line structures, wherein each of the conductive line structures comprises the respective aluminum-containing rail that is a patterned portion of the aluminum layer and the respective metallic cap strip that is a patterned portion of the cap material layer; and
further comprising laterally recessing sidewalls of the aluminum-containing rails by selectively etching aluminum selective to the metallic cap strips during or after a first anisotropic etch process.
2. A method of forming a cross-point memory device, comprising:
forming a set of first conductive line structures laterally extending along a first horizontal direction over a substrate;
forming memory-level material layers over the set of first conductive line structures;
forming a set of second conductive line structures laterally extending along a second horizontal direction over top surfaces of the array of memory pillar structures;
patterning the memory-level material layers into an array of memory pillar structures, wherein each of the memory pillar structures comprises a respective memory element, and at least one of the first conductive line structures and the second conductive line structures each comprise a respective aluminum-containing rail and a respective metallic cap strip in contact with a top surface of the respective aluminum-containing rail; and
forming dielectric isolation rails between each laterally neighboring pair of conductive line structures by:
depositing at least one dielectric fill material between and over the conductive line structures; and
removing portions of the at least one dielectric fill material from above a horizontal plane including top surfaces of the conductive line structures using chemical mechanical planarization, wherein remaining portions of the dielectric fill material comprise the dielectric isolation rails and wherein the metallic cap strips protect the underlying aluminum-containing rails during the chemical mechanical planarization.