Slurry, polishing-liquid set, polishing liquid, and polishing method for base

1. A slurry comprising:

abrasive grains;

3,5-dimethylpyrazole; and

water, wherein

the abrasive grains include a hydroxide of a tetravalent metal element,

the abrasive grains produce absorbance ranging from 1.00 to 1.49 for light having a wavelength of 400 nm in an aqueous dispersion having a content of the abrasive grains adjusted to 1.0 mass %, and

the slurry exhibits an amount of change over time of conductivity of 25 mS/m or less when stored at 60° C. for 72 hours, the amount of change over time of conductivity representing a measured value (B−A) of a difference between conductivity A obtained by measuring the slurry adjusted to 25° C. and conductivity B measured after heating the slurry at 60° C. for 72 hours.

2. The slurry according to claim 1 , wherein the abrasive grains produce a liquid phase having a content of a non-volatile component of 500 ppm or more when an aqueous dispersion having a content of the abrasive grains adjusted to 1.0 mass % is centrifuged for 50 minutes at a centrifugal acceleration of 1.59×10 5 G.

3. The slurry according to claim 1 , wherein the abrasive grains produce light transmittance of 50%/cm or more for light having a wavelength of 500 nm in an aqueous dispersion having a content of the abrasive grains adjusted to 1.0 mass %.

4. The slurry according to claim 1 , wherein the abrasive grains produce absorbance of 1.000 or more for light having a wavelength of 290 nm in an aqueous dispersion having a content of the abrasive grains adjusted to 0.0065 mass %.

5. The slurry according to claim 1 , wherein the abrasive grains produce absorbance of 0.010 or less for light having a wavelength of 450 to 600 nm in an aqueous dispersion having a content of the abrasive grains adjusted to 0.0065 mass %.

6. The slurry according to claim 1 , wherein the tetravalent metal element is tetravalent cerium.

7. The slurry according to claim 1 , wherein a content of the abrasive grains is 0.3 mass % or less based on the total mass of the slurry.

8. The slurry according to claim 1 , wherein a content of 3,5-dimethylpyrazole is 0.01 mmol/L or more based on the total mass of the slurry.

9. A polishing-liquid set wherein constituent components of a polishing liquid are separately stored as a first liquid and a second liquid such that the first liquid and the second liquid are mixed to form the polishing liquid,

the first liquid is the slurry according to claim 1 , and

the second liquid comprises an additive, excluding a compound having an aromatic heterocycle, and water, wherein

the aromatic heterocycle has an endocyclic nitrogen atom not bound to a hydrogen atom, and

a charge of the endocyclic nitrogen atom obtained by using Merz-Kollman method is −0.45 or less.

10. A polishing method for a base, comprising:

a step of arranging a material to be polished of a base having the material to be polished on its surface so as to be opposed to a polishing pad,

a step of obtaining the polishing liquid by mixing the first liquid and the second liquid of the polishing-liquid set according to claim 9 , and

a step of supplying the polishing liquid between the polishing pad and the material to be polished and polishing at least a part of the material to be polished.

11. The polishing method according to claim 10 , wherein the material to be polished includes silicon oxide.

12. A polishing method for a base, comprising:

a step of arranging a material to be polished of a base having the material to be polished on its surface so as to be opposed to a polishing pad, and

a step of supplying each of the first liquid and the second liquid of the polishing-liquid set according to claim 9 between the polishing pad and the material to be polished and polishing at least a part of the material to be polished.

13. The polishing method according to claim 12 , wherein the material to be polished includes silicon oxide.

14. A polishing method for a base, comprising:

a step of arranging a material to be polished of a base having the material to be polished on its surface so as to be opposed to a polishing pad, and

a step of supplying the slurry according to claim 1 between the polishing pad and the material to be polished and polishing at least a part of the material to be polished.

15. The polishing method according to claim 14 , wherein the material to be polished includes silicon oxide.

16. A polishing liquid comprising:

abrasive grains;

3,5-dimethylpyrazole;

an additive, excluding a compound having an aromatic heterocycle; and

water, wherein

the abrasive grains include a hydroxide of a tetravalent metal element,

the abrasive grains produce absorbance ranging from 1.00 to 1.49 for light having a wavelength of 400 nm in an aqueous dispersion having a content of the abrasive grains adjusted to 1.0 mass %,

the aromatic heterocycle has an endocyclic nitrogen atom not bound to a hydrogen atom,

a charge of the endocyclic nitrogen atom obtained by using Merz-Kollman method is −0.45 or less, and

the polishing liquid exhibits an amount of change over time of conductivity of 25 mS/m or less when stored at 60° C. for 72 hours, the amount of change over time of conductivity representing a measured value (B−A) of a difference between conductivity A obtained by measuring the polishing liquid adjusted to 25° C. and conductivity B measured after heating the polishing liquid at 60° C. for 72 hours.

17. The polishing liquid according to claim 16 , wherein the abrasive grains produce a liquid phase having a content of a non-volatile component of 500 ppm or more when an aqueous dispersion having a content of the abrasive grains adjusted to 1.0 mass % is centrifuged for 50 minutes at a centrifugal acceleration of 1.59×10 5 G.

18. The polishing liquid according to claim 16 , wherein the abrasive grains produce light transmittance of 50%/cm or more for light having a wavelength of 500 nm in an aqueous dispersion having a content of the abrasive grains adjusted to 1.0 mass %.

19. The polishing liquid according to claim 16 , wherein the abrasive grains produce absorbance of 1.000 or more for light having a wavelength of 290 nm in an aqueous dispersion having a content of the abrasive grains adjusted to 0.0065 mass %.

20. The polishing liquid according to claim 16 , wherein the abrasive grains produce absorbance of 0.010 or less for light having a wavelength of 450 to 600 nm in an aqueous dispersion having a content of the abrasive grains adjusted to 0.0065 mass %.

21. The polishing liquid according to claim 16 , wherein the tetravalent metal element is tetravalent cerium.

22. The polishing liquid according to claim 16 , wherein a content of the abrasive grains is 0.3 mass % or less based on the total mass of the polishing liquid.

23. The polishing liquid according to claim 16 , wherein a content of 3,5-dimethylpyrazole is 0.01 mmol/L or more based on the total mass of the polishing liquid.

24. A polishing method of a base, comprising:

a step of arranging a material to be polished of a base having the material to be polished on its surface so as to be opposed to a polishing pad, and

a step of supplying the polishing liquid according to claim 16 between the polishing pad and the material to be polished and polishing at least a part of the material to be polished.

25. The polishing method according to claim 24 , wherein the material to be polished includes silicon oxide.