Hybrid bonding interconnection using laser and thermal compression
In one example, a method to manufacture a semiconductor device comprises providing an electronic component over a substrate, wherein an interconnect of the electronic component contacts a conductive structure of the substrate, providing the substrate over a laser assisted bonding (LAB) tool, wherein the LAB tool comprises a stage block with a window, and heating the interconnect with a laser beam through the window until the interconnect is bonded with the conductive structure. Other examples and related methods are also disclosed herein.
1. A method to manufacture a semiconductor device, comprising:
providing an electronic component over a substrate, the electronic component comprising a body comprising silicon and an interconnect comprising a metal, wherein the interconnect of the electronic component contacts a conductive structure of the substrate;
providing the substrate over a laser assisted bonding (LAB) tool, wherein the LAB tool comprises a stage block comprising a window, wherein the window of the stage block comprises a solid translucent material; and
heating the interconnect with a laser beam through the window until the interconnect is bonded with the conductive structure;
wherein more heat is applied to the interconnect than to the body of the electronic component;
wherein the stage block supports the window and the substrate over the laser beam, and wherein the laser beam is directed at the interconnect through a bottom side of the window and through the substrate without passing through the electronic component;
wherein the substrate is on the window, and the window is configured to support the substrate; and
wherein a footprint of the window is as large or larger than a footprint of the substrate.
2. The method of claim 1 , wherein the laser beam has a depth of field (DOF) and the interconnect is in the DOF when heated.
3. The method of claim 1 , wherein the window comprises quartz.
4. The method of claim 1 , wherein the electronic component is over a first side of the substrate, and the laser beam is applied to the interconnect from a second side of the substrate opposite to the first side.
5. The method of claim 1 , further comprising maintaining a temperature of the substrate directly adjacent to the interconnect lower than a temperature of the interconnect when heat is applied to the interconnect from the laser beam.
6. The method of claim 1 , further comprising maintaining a temperature of the electronic component directly adjacent to the interconnect lower than a temperature of the interconnect when heat is applied to the interconnect from the laser beam.
7. The method of claim 1 , further comprising maintaining a temperature of a mold compound adjacent to the electronic component and directly adjacent to the interconnect at a lower temperature than a temperature of the interconnect when heat is applied to the interconnect from the laser beam.
8. A method to manufacture a semiconductor device, comprising:
providing an electronic component over a first substrate side of a substrate, wherein the electronic component comprises semiconductor material, and wherein an interconnect of the electronic component contacts a conductive structure of the substrate;
providing the substrate in a hybrid bonder tool comprising a laser assisted bonding (LAB) tool and a thermal/compression boding (TCB) tool;
applying a first heat to the interconnect with a laser beam from the LAB tool through a second substrate side opposite the first substrate side; and
applying a second heat and compression to the interconnect with the TCB tool through the electronic component;
wherein the LAB tool comprises a window, wherein the window comprises a solid translucent material, wherein the substrate is on the window, and wherein the laser beam is applied to the interconnect through the window; and
wherein the laser beam is directed at the interconnect through a bottom side of the window and through the substrate without passing through the electronic component.
9. The method of claim 8 , wherein the laser beam has a depth of field (DOF) and the interconnect is in the DOF when heated.
10. The method of claim 8 , wherein the TCB tool comprises a heater source and a thermal/compression plate, wherein the second heat is applied with the heater source through the thermal/compression plate, and the compression is applied with the thermal/compression plate pressing onto the electronic component.
11. The method of claim 8 , wherein the LAB tool and the TCB tool are applied concurrently.
12. The method of claim 8 , further comprising maintaining a temperature of the substrate directly adjacent to the interconnect lower than a temperature of the interconnect when the first heat is applied to the interconnect from the LAB tool.
13. The method of claim 8 , further comprising maintaining a temperature of the electronic component directly adjacent to the interconnect with the TCB tool lower than a temperature of the interconnect when the first heat is applied to the interconnect from the LAB tool.
14. The method of claim 8 , wherein the window contacts a second side of the substrate when the first heat is applied.
15. A method of manufacturing a semiconductor device using a laser assisted bonding (LAB) tool, the method comprising:
providing a laser source; and
providing a stage block comprising a physical window over the laser source;
wherein the laser source is configured to direct a laser beam to the physical window to apply a first heat on an interconnect of a workpiece supported by the stage block;
wherein the workpiece comprises an electronic component comprising the interconnect, and a substrate comprising a conductive structure contacting the interconnect;
wherein the laser beam is directed at the interconnect and through the physical window from a direction below the workpiece;
wherein a portion of the workpiece directly adjacent to the interconnect is maintained at lower temperature than a temperature of the interconnect when the first heat is applied to the interconnect from the laser beam;
wherein the laser beam is directed at the interconnect through a bottom side of the physical window and through the substrate without passing through the electronic component;
wherein the workpiece is on the physical window, and the physical window is configured to support the workpiece; and
wherein a footprint of the physical window is as large or larger than a footprint of the workpiece.
16. The method of claim 15 , wherein:
the substrate comprises a first side and a second side opposite the first side;
wherein the electronic component is over the first side of the substrate and contacting the conductive structure via the interconnect; and
wherein the laser source is configured to emit the laser beam to apply the first heat on the interconnect through the second side of the substrate.
17. The method of claim 15 , further comprising:
providing a thermal/compression bonding (TCB) tool, comprising a thermal/compression plate;
wherein:
the thermal/compression plate is configured to press a top side of the electronic component opposite the interconnect when the laser source applies the first heat on the interconnect, and
the thermal/compression plate is configured to transfer a second heat and compression to the interconnect when the thermal/compression plate presses the top side of the electronic component.
18. The method of claim 15 , wherein the physical window comprises a ceramic.
19. The method of claim 8 , wherein the window is configured to support the substrate.
20. The method of claim 8 , wherein a footprint of the window is as large or larger than a footprint of the substrate.
21. The method of claim 15 , wherein the electronic component comprises silicon and the substrate comprises a non-silicon material.