Single-layer circuit board, multi-layer circuit board, and manufacturing methods therefor
A single-layer circuit board, multi-layer circuit board, and manufacturing methods therefor. The method for manufacturing the single-layer circuit board comprises the following steps: drilling a hole on a substrate, the hole comprising a blind hole and/or a through hole; on a surface of the substrate, forming a photoresist layer having a circuit negative image; forming a conductive seed layer on the surface of the substrate and a hole wall of the hole; removing the photoresist layer, and forming a circuit pattern on the surface of the substrate, wherein forming a conductive seed layer comprises implanting a conductive material below the surface of the substrate and below the hole wall of the hole via ion implantation, and forming an ion implantation layer as at least part of the conductive seed layer.
1. A method for manufacturing multi-layer circuit board, comprising:
implementing a multi-layer laying-up plate and lamination in an order of surface sticking layer, single-layer circuit board, middle sticking layer, single-layer circuit board, middle sticking layer, single-layer circuit board, surface sticking layer;
drilling a hole on the multi-layer plate after lamination, the hole comprises through hole and/or blind hole;
forming a conductive seed layer to an outer surface of said surface sticking layer and a hole wall of said hole; and
forming circuit pattern on the outer surface of said surface sticking layer,
wherein forming a conductive seed layer comprises implanting a conductive material below the outer surface of said surface sticking layer below and hole wall of said hole via ion implantation, to form ion implantation layer as at least part of said conductive seed layer.
2. The method of claim 1 , wherein during said ion implantation, the ions of said conductive material gain energy of 1-1000 keV, are implanted below a hole wall of said hole and/or below the outer surface of said surface sticking layer for a depth of 1-500 nm, and form steady doping structure with said substrate.
3. The method of claim 1 , wherein forming the conductive seed layer further comprises, depositing a conductive material above said ion implantation layer via plasma deposition, to form plasma deposition layer, said plasma deposition layer and said ion implantation layer constitute said conductive seed layer, wherein during said plasma deposition, the ions of said conductive material gain energy of 1-1000 eV, forms said plasma deposition layer in a thickness of 1-10000 nm.
4. The method of claim 1 , wherein forming the conductive seed layer further comprises:
via one or more of electroplating, chemical plating, vacuum evaporation, sputtering, utilizing one or more of Al, Mn, Fe, Ti, Cr, Co, Ni, Cu, Ag, Au, V, Zr, Mo, Nb and alloy thereof, forming a conductor thickening layer on said conductive seed layer formed to said hole wall.