Power-endurance modes for data center solid-state drives
An apparatus includes memory arrays and a power-performance-endurance manager module. The power-performance-endurance manager module stores a power-endurance state descriptor data structure, which includes endurance levels associated with power-endurance modes. The manager module dynamically configures the apparatus to operate the memory arrays according to one of the power-endurance modes based on a desired endurance level.
1. An apparatus comprising:
a plurality of memory arrays;
a power-performance-endurance manager module configured to:
store a power-endurance state descriptor data structure comprising a plurality of endurance levels associated with a plurality of power-endurance modes;
dynamically configure the apparatus to operate the plurality of memory arrays according to one of the plurality of power-endurance modes based on a desired endurance level of the plurality of endurance levels;
tune the apparatus, based on trade-off determinations between endurance operations and power consumptions of the apparatus, to another of the plurality of power-endurance modes respective to another desired endurance level of the plurality of endurance levels.
2. The apparatus of claim 1 , wherein the power-performance-endurance manager module is configured to receive instructions from a host in communication with the apparatus, the instructions identifying the desired endurance level of the plurality of endurance levels for the power-performance-endurance manager module.
3. The apparatus of claim 1 , wherein the desired endurance level comprises a reduced programming procedure that decreases a programming voltage window size or a voltage step size to reduce accumulated stress on cells of the plurality of memory arrays and to increase a program erase cycle.
4. The apparatus of claim 1 , wherein the desired endurance level comprises a reduced exported capacity procedure that reduces a write amplification to increase an overall terabytes written.
5. The apparatus of claim 1 , wherein the desired endurance level comprises a programmed data shaping procedure that reduces a number of high-voltage states based on internal compressibility of input data or based on allocation of extra data.
6. The apparatus of claim 1 , further comprising:
a flash interface module configured to interact, based on the one of the plurality of endurance levels, with the plurality of memory arrays with respect to read and write operations.
7. The apparatus of claim 1 , further comprising:
a scheduler configured to control data transfers while activating a control path for fetching physical region pages, posting completion and interrupts, or activating direct memory accesses.
8. The apparatus of claim 1 , further comprising:
an error correction engine configured to correct data fetched from the plurality of memory arrays.
9. The apparatus of claim 1 , further comprising:
a controller configured to incorporate a coupled dynamic random access memory used by the apparatus.
10. The apparatus of claim 1 ,
wherein the power-performance-endurance manager module is configured to implement autonomous power-endurance mode transitions between the plurality of power-endurance modes.
11. The apparatus of claim 1 ,
wherein the power-performance-endurance manager module is configured to operate one or more dies of the plurality of memory arrays according to the one of the plurality of power-endurance modes based on the desired endurance level.
12. The apparatus of claim 1 , wherein the desired endurance level comprises a reduced programming procedure, a reduced exported capacity procedure, or programmed data shaping procedure.
13. A method comprising:
storing, by a power-performance-endurance manager module of a solid-state drive, a power-endurance state descriptor data structure comprising a plurality of endurance levels associated with a plurality of power-endurance modes;
dynamically configure, by the power-performance-endurance manager module, the solid-state drive to operate a plurality of memory arrays of the solid-state drive according to one of the plurality of power-endurance modes based on a desired endurance level of the plurality of endurance levels; and
tuning the solid-state drive, based on trade-off determinations between endurance operations and power consumptions of the solid-state drive, to another of the plurality of power-endurance modes respective to another desired endurance level of the plurality of endurance levels.
14. The method of claim 13 , further comprising:
receiving instructions from a host in communication with the solid-state drive, the instructions identifying the desired endurance level of the plurality of endurance levels for the power-performance-endurance manager module.
15. The method of claim 13 , wherein the desired endurance level comprises a reduced programming procedure that decreases a programming voltage window size or a voltage step size to reduce accumulated stress on cells of the plurality of memory arrays and to increase a program erase cycle.
16. The method of claim 13 , wherein the desired endurance level comprises a reduced exported capacity procedure that reduces a write amplification to increase an overall terabytes written.
17. The method of claim 13 , wherein the desired endurance level comprises a programmed data shaping procedure that reduces a number of high-voltage states based on internal compressibility of input data or based on allocation of extra data.
18. The method of claim 13 , further comprising:
interacting, by a flash interface module of the solid-state drive based on the one of the plurality of endurance levels, with the plurality of memory arrays with respect to read and write operations.
19. The method of claim 13 , further comprising:
controlling, by a scheduler of the solid-state drive, data transfers while activating a control path for fetching physical region pages, posting completion and interrupts, or activating direct memory accesses.
20. The method of claim 13 , further comprising:
correcting, by an error correction engine, data fetched from the plurality of memory arrays.