Displays with silicon and semiconducting oxide thin-film transistors
An electronic device may include a display having an array of display pixels on a substrate. The display pixels may be organic light-emitting diode display pixels or display pixels in a liquid crystal display. In an organic light-emitting diode display, hybrid thin-film transistor structures may be formed that include semiconducting oxide thin-film transistors, silicon thin-film transistors, and capacitor structures. The capacitor structures may overlap the semiconducting oxide thin-film transistors. Organic light-emitting diode display pixels may have combinations of oxide and silicon transistors. In a liquid crystal display, display driver circuitry may include silicon thin-film transistor circuitry and display pixels may be based on oxide thin-film transistors. A single layer or two different layers of gate metal may be used in forming silicon transistor gates and oxide transistor gates. A silicon transistor may have a gate that overlaps a floating gate structure.
1. A display pixel comprising:
a first power supply terminal;
a second power supply terminal;
a light-emitting diode coupled between the first and second power supply terminals;
a drive transistor coupled between the first power supply terminal and the light-emitting diode;
a first switching transistor that is coupled to a gate of the drive transistor, wherein the first switching transistor is an oxide transistor;
a capacitor coupled to a first node that is interposed between the first switching transistor and the drive transistor;
a sensing line that is configured to implement a compensation scheme; and
a second switching transistor that is coupled between the sensing line and a second node that is interposed between the drive transistor and the light-emitting diode, wherein the second switching transistor is a silicon transistor.
2. The display pixel defined in claim 1 , wherein the drive transistor is an oxide transistor.
3. The display pixel defined in claim 1 , wherein the drive transistor is a silicon transistor.
4. The display pixel defined in claim 1 , wherein the second switching transistor is a p-type metal-oxide-semiconductor silicon transistor.
5. The display pixel defined in claim 1 , wherein the second switching
transistor is an n-type metal-oxide-semiconductor silicon transistor.
6. The display pixel defined in claim 1 , wherein the drive transistor has a channel formed from a layer of semiconducting oxide.
7. The display pixel defined in claim 1 , wherein the capacitor is configured to store data signals from a data line.
8. A display pixel comprising:
a first power supply terminal;
a second power supply terminal;
a light-emitting diode coupled between the first and second power supply terminals;
a drive transistor coupled between the first power supply terminal and the light-emitting diode;
a first switching transistor that is coupled to a gate of the drive transistor, wherein the first switching transistor is an oxide transistor;
a storage capacitor coupled to a first node that is interposed between the first switching transistor and the drive transistor;
a sensing line that is configured to adjust for pixel-to-pixel variations in transistor performance; and
a second switching transistor that is coupled between the sensing line and a second node that is interposed between the drive transistor and the light-emitting diode.
9. The display pixel defined in claim 8 , wherein the first switching transistor has a channel formed from a layer of semiconducting oxide and wherein the drive transistor has a channel formed from a layer of semiconducting oxide.
10. The display pixel defined in claim 9 , wherein the second switching transistor has a channel formed from a layer of silicon.
11. The display pixel defined in claim 8 , wherein the first switching transistor has a channel formed from a layer of semiconducting oxide and wherein the drive transistor has a channel formed from a layer of silicon.
12. The display pixel defined in claim 11 , wherein the second switching transistor has a channel formed from a layer of silicon.
13. The display pixel defined in claim 8 , wherein the storage capacitor is configured to store signals on the gate of the drive transistor between frames.
14. The display pixel defined in claim 8 , wherein the second switching transistor is a p-type metal-oxide-semiconductor silicon transistor.
15. The display pixel defined in claim 8 , wherein the second switching
transistor is an n-type metal-oxide-semiconductor silicon transistor.
16. A display pixel comprising:
a first power supply terminal;
a second power supply terminal;
a light-emitting diode coupled between the first and second power supply terminals;
a drive transistor coupled between the first power supply terminal and the light-emitting diode;
a first switching transistor that is coupled to a gate of the drive transistor, wherein the first switching transistor is an oxide transistor;
a sensing line; and
a second switching transistor that is coupled between the sensing line and a first node that is interposed between the drive transistor and the light-emitting diode, wherein the second switching transistor is a silicon transistor.
17. The display pixel defined in claim 16 , wherein the drive transistor is an oxide transistor.
18. The display pixel defined in claim 16 , wherein the drive transistor is a silicon transistor.
19. The display pixel defined in claim 16 , wherein the sensing line is used to implement a compensation scheme to adjust for pixel-to-pixel variations in transistor performance.
20. The display pixel defined in claim 16 , further comprising:
a storage capacitor coupled to a second node that is interposed between the first switching transistor and the drive transistor.