Semiconductor device
A semiconductor device having a three-dimensional (3D) structure is disclosed. The semiconductor device includes a first chip configured to include a logic circuit, and a second chip stacked on the first chip and configured to include a memory cell array. At least one transfer circuit for connecting a row line of the memory cell array to a global row line is distributed to each of the first chip and the second chip.
1. A semiconductor device comprising:
a first chip configured to include a logic circuit; and
a second chip stacked on the first chip, and configured to include a memory cell array,
wherein at least one transfer circuit configured to connect a row line of the memory cell array to a global row line is distributed to each of the first chip and the second chip, and
wherein the second chip includes:
a second transfer circuit configured to receive a row line selection signal and an operation voltage from the first chip through a plurality of first pads common to an interface between the first chip and the second chip, and configured to connect the row line of the memory cell array to the global row line in response to the row line selection signal.
2. The semiconductor device according to claim 1 , further comprising:
the plurality of first pads common to a first surface of the first chip; and
a plurality of second pads common to a first surface of the second chip,
wherein each of the plurality of first pads and each of the plurality of second pads are bonded to each other.
3. The semiconductor device according to claim 2 , wherein:
the plurality of first pads is coupled to the logic circuit and a first transfer circuit disposed in the first chip;
the plurality of second pads is coupled to the memory cell array and the second transfer circuit disposed in the second chip; and
the operation voltage and the row line selection signal are received by the first transfer circuit and the second transfer circuit through the plurality of first pads and the plurality of second pads.
4. The semiconductor device according to claim 1 , wherein the first chip includes:
a first transfer circuit configured to connect the global row line and the row line in response to the row line selection signal;
a block decoder configured to provide the row line selection signal to the first transfer circuit and the second transfer circuit disposed in the second chip;
a global decoder configured to provide the operation voltage to the first transfer circuit and the second transfer circuit through the global row line; and
a peripheral circuit configured to provide a block selection signal to the block decoder.
5. The semiconductor device according to claim 4 , wherein the first transfer circuit includes:
a plurality of pass transistors coupled between the global row line and the row line, and configured to receive the row line selection signal through gate terminals thereof.
6. The semiconductor device according to claim 5 , wherein the plurality of pass transistors is coupled to row lines of the memory cell array.
7. The semiconductor device according to claim 1 , wherein the second transfer circuit includes:
a plurality of pass transistors coupled respectively between global row lines and row lines, and configured to receive the row line selection signal through gate terminals thereof.
8. The semiconductor device according to claim 7 , wherein the plurality of pass transistors is coupled to row lines of the memory cell array.