Thinned semiconductor package and related methods
Implementations of semiconductor packages may include a die having a first side and a second side opposite the first side, a first metal layer coupled to the first side of the die, a tin layer coupled to the first metal layer, the first metal layer between the die and the tin layer, a backside metal layer coupled to the second side of the die, and a mold compound coupled to the die. The mold compound may cover a plurality of sidewalls of the first metal layer and a plurality of sidewalls of the tin layer and a surface of the mold compound is coplanar with a surface of the tin layer.
1. A semiconductor package comprising:
a die having a first side and a second side opposite the first side;
a first metal layer coupled over a second metal layer, the second metal layer coupled over the first side of the die;
a tin layer coupled to the first metal layer;
a backside metal layer coupled to the second side of the die;
a mold compound coupled to the die, wherein the mold compound covers a plurality of sidewalls of the first metal layer, a plurality of sidewalls of the second metal layer, and a plurality of sidewalls of the tin layer;
wherein a surface of the mold compound is coplanar with a surface of the tin layer; and
wherein a portion of the mold compound extends to the second side of the die.
2. The semiconductor package of claim 1 , wherein a third side, a fourth side, a fifth side, and a sixth side of the die are covered by the mold compound.
3. The semiconductor package of claim 1 , wherein the backside metal layer comprises copper.
4. The semiconductor package of claim 1 , wherein the backside metal layer comprises a metal alloy comprising titanium, nickel, silver, vanadium, copper, and any combination thereof.
5. The semiconductor package of claim 1 , wherein the backside metal layer comprises at least three layers.
6. The semiconductor package of claim 5 , wherein each of the at least three layers comprise one of titanium, nickel, silver, vanadium or copper.
7. The semiconductor package of claim 1 , further comprising a second mold compound directly coupled to the second side of the die.
8. A semiconductor package comprising:
a die having a first side and a second side opposite the first side;
a plurality of bumps, each bump of the plurality of bumps comprising:
a first metal layer coupled to a second metal layer, the second metal layer coupled to the first side of the die; and
a tin layer coupled to the first metal layer; and
a backside metal layer coupled to the second side of the die; and
a mold compound coupled to the die, wherein the mold compound covers a plurality of sidewalls of the first metal layer, a plurality of sidewalls of the second metal layer, and a plurality of sidewalls of the tin layer;
wherein the mold compound extends to the second side of the die.
9. The semiconductor package of claim 8 , wherein a third side, a fourth side, a fifth side, and a sixth side of the die are covered by the mold compound.
10. The semiconductor package of claim 8 , wherein the backside metal layer comprises copper.
11. The semiconductor package of claim 8 , wherein the backside metal layer comprises a metal alloy comprising titanium, nickel, silver, vanadium, copper, and any combination thereof.
12. The semiconductor package of claim 8 , wherein the backside metal layer comprises at least three layers.
13. The semiconductor package of claim 12 , wherein each of the at least three layers comprise one of titanium, nickel, silver, vanadium or copper.
14. The semiconductor package of claim 8 , further comprising a second mold compound directly coupled to the second side of the die.
15. A semiconductor package comprising:
a die having a first side and a second side opposite the first side;
a first metal layer coupled over a second metal layer, the second metal layer coupled over the first side of the die;
a tin layer coupled to the first metal layer;
a backside metal layer coupled to the second side of the die;
a mold compound coupled to the die, wherein the mold compound covers a plurality of sidewalls of the first metal layer, a plurality of sidewalls of the second metal layer, and a plurality of sidewalls of the tin layer;
wherein a surface of the mold compound is coplanar with a surface of the tin layer; and
wherein a portion of the mold compound extends only to the backside metal layer.
16. The semiconductor package of claim 15 , wherein the backside metal layer comprises copper.
17. The semiconductor package of claim 15 , wherein the backside metal layer comprises a metal alloy comprising titanium, nickel, silver, vanadium, copper, and any combination thereof.
18. The semiconductor package of claim 15 , wherein the backside metal layer comprises at least three layers.
19. The semiconductor package of claim 18 , wherein each of the at least three layers comprise one of titanium, nickel, silver, vanadium or copper.