Nitride semiconductor light-emitting element
A nitride semiconductor light emitting element includes a multi-quantum well layer including AlGaN, and including a plurality of well layers and producing light by combining carriers and emitting deep ultraviolet light with a central wavelength of 250 nm to 350 nm, a metal electrode part including Al that is located above the multi-quantum well layer and reflects a first light that is a part of the light produced by the multi-quantum well layer and travels upward, a multi-stacked semiconductor layer that is located between the multi-quantum well layer and the metal electrode part, includes a plurality of p-type semiconductor layers including p-type AlGaN, and is configured in such a manner that the first light travels out and back therewithin via reflection at the metal electrode part until meeting a second light that is a part of the light produced by the multi-quantum well layer and travels downward, and an ITO contact electrode part provided between the metal electrode part and the multi-quantum well layer, and including an indium tin oxide, wherein a difference in refractive index between a p-type semiconductor layer and a layer adjacent thereto in the multi-stacked semiconductor layer is not more than 0.12, wherein the multi-stacked semiconductor layer and the ITO contact electrode part have a film thickness that allows only the first light after traveling out and back within the multi-stacked semiconductor layer and the ITO contact electrode part via the reflection at the metal electrode part, and the second light to meet in the same phase and exit from a lower side of the multi-quantum well layer.
1. A nitride semiconductor light-emitting element, comprising:
a multi-quantum well layer comprising AlGaN, and comprising a plurality of well layers and producing light by combining carriers and emitting deep ultraviolet light with a central wavelength of 250 nm to 350 nm;
a p-side electrode located above the multi-quantum well layer and reflects a first light that is a part of the light produced by the multi-quantum well layer and travels upward, the p-side electrode comprising:
a metal electrode part comprising Al;
an ITO contact electrode part provided between the metal electrode part and the multi-quantum well layer, the ITO contact electrode comprising an indium tin oxide, and
an electrode part located between the metal electrode part and the ITO contact electrode part and comprising TI, NI or Pd, the electrode part having a film thickness of not more than 5 nm; and
a multi-stacked semiconductor layer that is located between the multi-quantum well layer and the p-side electrode, comprises a plurality of p-type semiconductor layers comprising p-type AlGaN, and is configured in such a manner that the first light travels out and back therewithin via reflection at the metal electrode part until meeting a second light that is a part of the light produced by the multi-quantum well layer and travels downward;
wherein a difference in refractive index between a p-type semiconductor layer and a layer adjacent thereto in the multi-stacked semiconductor layer is not more than 0.12,
wherein the multi-stacked semiconductor layer and the ITO contact electrode part have a film thickness that allows only the first light after traveling out and back within the multi-stacked semiconductor layer and the ITO contact electrode part via the reflection at the metal electrode part, and the second light to meet in the same phase and exit from a lower side of the multi-quantum well layer.
2. The nitride semiconductor light-emitting element according to claim 1 , wherein an optical path length through the multi-stacked semiconductor layer in a film thickness direction is substantially equal to a value obtained by adding an integral multiple of half a wavelength of the first light to one-quarter the wavelength.
3. The nitride semiconductor light-emitting element according to claim 2 , wherein the optical path length through the multi-stacked semiconductor layer in the film thickness direction is substantially equal to a value obtained by adding an integral multiple of half a wavelength of the first light to one-quarter the wavelength and then multiplied by Cos θ°, where θ° is an angle formed by the film thickness direction of the multi-stacked semiconductor layer and the first light.
4. The nitride semiconductor light-emitting element according to claim 3 , wherein the optical path length through the multi-stacked semiconductor layer in the film thickness direction is within the range of 0.5 times to 0.8 times the wavelength of the first light.
5. The nitride semiconductor light-emitting element according to claim 1 , wherein the multi-stacked semiconductor layer has a film thickness in the range from 60 nm to 100 nm.
6. The nitride semiconductor light-emitting element according to claim 1 , wherein an optical path length, from an upper surface of any of the plurality of well layers constituting the multi-quantum well layer to an interface between the multi-stacked semiconductor layer and the metal electrode part, is substantially equal to a value obtained by adding an integral multiple of half a wavelength of the first light to one-quarter the wavelength.
7. The nitride semiconductor light-emitting element according to claim 6 , wherein the optical path length, from an upper surface of any of the plurality of well layers constituting the multi-quantum well layer to the interface between the multi-stacked semiconductor layer and the metal electrode part, is substantially equal to a value obtained by adding an integral multiple of half a wavelength of the first light to one-quarter the wavelength and then multiplied by Cos θ°.
8. The nitride semiconductor light-emitting element according to claim 1 , wherein the multi-stacked semiconductor layer comprises an electron blocking layer located on the multi-quantum well layer side and a p-type cladding layer located on the electron blocking layer and comprising p-type AlGaN.
9. The nitride semiconductor light-emitting element according to claim 1 , wherein the multi-stacked semiconductor layer further comprises a p-type contact layer that is located on the p-type cladding layer and comprises p-type GaN.
10. The nitride semiconductor light-emitting element according to claim 9 , wherein the p-type cladding layer comprises a first p-type cladding layer located on the electron blocking layer side and comprising p-type AlGaN with a first composition ratio, and a second p-type cladding layer located on the p-type contact layer side and comprising p-type AlGaN with a second composition ratio smaller than the first composition ratio.
11. The nitride semiconductor light-emitting element according to claim 1 , wherein the multi-stacked semiconductor layer further comprises a tunnel junction that is located on the p-type cladding layer.
12. The nitride semiconductor light-emitting element according to claim 11 , wherein the tunnel junction comprises a p-type layer comprising a p-type semiconductor and an n-type layer comprising an n-type semiconductor.