IP Library › Granted Patent US 12,199,222
Granted Patent B2
US 12,199,222 · App. 17/824,429 · Granted Jan 14, 2025

μ-LED, μ-LED device, display and method for the same

Inventors: Xue Wang (Regensburg, DE); Petrus Sundgren (Lappersdorf, DE); Laura Kreiner (Regensburg, DE)
Assignee: OSRAM Opto Semiconductors GmbH
H01L33/52H01L25/0753H01L33/04H01L33/502H01L33/60B60K35/00B60K35/22B60K2360/1523
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Quick Facts
Patent No.
US 12,199,222
App. No.
17/824,429
Filed
May 25, 2022
Granted
Jan 14, 2025
Kind
B2
Art Unit
2891
USPC
257/79
Abstract

The invention relates to various aspects of a μ-LED or a μ-LED array for augmented reality or lighting applications, in particular in the automotive field. The μ-LED is characterized by particularly small dimensions in the range of a few μm.

Claims (27)

1. A μ-LED, comprising:

a three-dimensional light-emitting heterostructure having a layer stack including a first conductive semiconductor layer, an active layer and a second conductive semiconductor layer;

the light-emitting heterostructure comprises aluminium gallium arsenide and/or gallium indium phosphide and/or aluminium gallium indium phosphide; and

a molding layer, on which the light-emitting heterostructure is grown three-dimensionally, wherein the molding layer comprises three oriented side surfaces selectively epitaxially deposited on a gallium arsenide (111)B epitaxial substrate.

2. The μ-LED according to claim 1 , in which the molding layer comprises gallium arsenide and/or aluminium gallium arsenide and/or aluminium gallium indium phosphide and/or a Bragg mirror stack.

3. The ρ-LED according to claim 1 , wherein the molding layer is wet-chemically post-processed after selective epitaxial deposition on the gallium arsenide (111)B epitaxial substrate.

4. The μ-LED according to claim 1 , in which a shape of the molding layer forms a three-sided pyramid whose side faces respectively comprise orientations (-1-10), (-10-1) and (0-1-1).

5. The μ-LED according to claim 1 , wherein the molding layer comprises a (111) or (-1-1-1) oriented surface.

6. The μ-LED according to claim 5 , wherein the molding layer forms a three-sided truncated pyramid having side faces respectively comprising orientations of (-1-10), (-10-1) and (0-1-1) and a top face having an orientation (-1-1-1).

7. The μ-LED according to claim 1 , wherein a projection of the light-emitting heterostructure onto the gallium arsenide (111)B epitaxial substrate has an edge length of <100 μm and preferably <20 μm.

8. The μ-LED according to claim 1 , in which the light-emitting heterostructure extends to a dielectric mask deposited on the gallium arsenide (111)B epitaxial substrate for selective epitaxial deposition of the molding layer.

9. The μ-LED according to claim 1 , wherein for a main radiation direction opposite to a growth direction of the layer stack below the light-emitting heterostructure there is another layer stack with a transparent contact layer applied after a removal of the gallium arsenide (111)B epitaxial substrate and an at least partial removal of the molding layer.

10. The μ-LED according to claim 1 , further comprising a transparent contact layer applied above the light-emitting heterostructure for a main radiation direction in a growth direction of the layer stack.

11. The μ-LED according to claim 10 , further comprising a converter material applied to the transparent contact layer in a region below or above the active layer in the main radiation direction.

12. A μ-LED arrangement comprising the μ-LED according to claim 10 and further comprising a photonic structure applied to a surface of the transparent contact layer.

13. The μ-LED arrangement according to claim 12 , with the photonic structure extending over a conversion layer.

14. A μ-display arrangement for a wavelength in a range of 560 nm to 1080 nm comprising at least one μ-LED according to claim 1 , arranged in rows and columns.

15. A μ-LED, comprising:

a three-dimensional light-emitting heterostructure having a layer stack including a first conductive semiconductor layer, an active layer and a second conductive semiconductor layer;

the light-emitting heterostructure comprising aluminium gallium arsenide and/or aluminium gallium indium phosphide and/or aluminium gallium indium arsenide; and

the light-emitting heterostructure comprising a main emission side and a contact side opposite the main emission side,

wherein one of the main emission side and the contact side comprises—in a top view—a triangular circumference with three inclined sidewalls.

16. The μ-LED according to claim 15 , further comprising a substantially triangular flat portion that is surrounded by the inclined sidewalls forming the triangular circumference.

17. The μ-LED according to claim 15 , wherein—in a side view—a distance of the triangular circumference to the active region is larger than a distance of a corresponding Spieker center of the triangular circumference to the active region.

18. The μ-LED according to claim 15 , in which the side wall comprises (-1-10), (-10-1) and (0-1-1) orientations.

19. The μ-LED according to claim 15 , wherein at least one of the sidewalls comprises a (111) or (-1-1-1) oriented surface.

20. The μ-LED according to claim 16 , wherein the substantially triangular flat portion comprises an (-1-1-1) orientation.

Assignments (1)
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Oct 11, 2022
From: BIEBERSDORF, ANDREAS; BRANDL, MICHAEL; BRICK, PETER; DROLET, JEAN-JACQUES; HALBRITTER, HUBERT; KREINER, LAURA; LANG, ERWIN; LEBER, ANDREAS; PHILIPPENS, MARC; SCHWARZ, THOMAS; STOLZ, JULIA; WANG, XUE; DIEKMANN, KARSTEN; ENGL, KARL; HERRMANN, SIEGFRIED; ILLEK, STEFAN; PIETZONKA, INES; RAUSCH, ANDREAS; SCHWALENBERG, SIMON; SUNDGREN, PETRUS; BOGNER, GEORG; KLEMP, CHRISTOPH; RAFAEL, CHRISTINE; FEIX, FELIX; RUMMEL, EVA-MARIA; HEITZER, NICOLE; ASSMANN, MARIE; BERGER, CHRISTIAN; KANEVCE, ANA
To: OSRAM OPTO SEMICONDUCTORS GMBH
Reel/Frame 061640/0574 →
Priority Claims (16)
DE 10 2019 201 114.4 · Jan 29, 2019 · national
DK PA201970059 · Jan 29, 2019 · national
DE 10 2019 103 365.9 · Feb 11, 2019 · national
DE 10 2019 111 766.6 · May 7, 2019 · national
DE 10 2019 111 767.4 · May 7, 2019 · national
DE 10 2019 112 605.3 · May 14, 2019 · national
DE 10 2019 112 609.6 · May 14, 2019 · national
DE 10 2019 113 636.9 · May 22, 2019 · national
DE 10 2019 114 321.7 · May 28, 2019 · national
DE 10 2019 118 084.8 · Jul 4, 2019 · national
DE 10 2019 125 336.5 · Sep 20, 2019 · national
DE 10 2019 125 349.7 · Sep 20, 2019 · national
DE 10 2019 127 424.9 · Oct 11, 2019 · national
DE 10 2019 127 425.7 · Oct 11, 2019 · national
DE 10 2019 130 821.6 · Nov 14, 2019 · national
DE 10 2019 131 506.9 · Nov 21, 2019 · national
Continuity (4)
Continuation 17515131 · Oct 29, 2021
Continuation 17038283 · Sep 30, 2020
Continuation PCTEP2020052191 · Jan 29, 2020
Related Publication 20220293830A1 · Sep 15, 2022
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