Granted Patent B2

US 12,206,053 · App. 17/515,131 · Granted Jan 21, 2025

Inventor: Peter Brick (Regensburg, DE)

Assignee: OSRAM Opto Semiconductors GmbH

H01L33/52H01L25/0753H01L33/04H01L33/502H01L33/60B60K35/00B60K35/22B60K2360/1523

Abstract

Claims (25)

1. A μ-LED device comprising:

a carrier substrate;

a nanopillar on the carrier substrate with a semiconductor sequence comprising at least one active layer having a semiconductor base material, said nanopillar connected at least indirectly to the carrier substrate and pointing in a longitudinal direction from the latter, wherein the active layer is configured to emit electromagnetic radiation and is arranged such that at least part of the radiation emission is transverse to the longitudinal direction; and

a reflector device arranged on the carrier substrate laterally to the nanopillar, which deflects the radiation emission transversely to the longitudinal direction at least partially into a main radiation direction running parallel to the longitudinal direction;

wherein the reflector device comprises a reflector layer comprising the semiconductor base material.

2. The μ-LED device according to claim 1 , wherein the reflector device comprises a first reflective optical element and a second reflective optical element arranged on different sides of the nanopillar.

3. The μ-LED device according to claim 1 , wherein the reflector device is arranged between two nanopillars.

4. The μ-LED device according to claim 1 , wherein the reflector device comprises a shaped layer monolithically formed with a layer of the semiconductor sequence of the nanopillar.

5. The μ-LED device according to claim 1 , wherein the reflector device comprises a metallic reflective layer and/or a Bragg mirror.

6. The μ-LED device according to claim 1 , wherein the reflector device comprises a Fresnel lens array.

7. The μ-LED device according to claim 1 , wherein a wavelength conversion element is arranged in a beam path between the nanopillar and the reflector device.

8. The μ-LED device according to claim 7 , wherein the wavelength conversion element comprises a converter material including an inorganic dye or quantum dots.

9. The μ-LED device according to claim 1 , wherein a first wavelength conversion element associated with a first nanopillar is applied for emitting electromagnetic radiation, which is spectrally different from the emission of a second wave-length conversion element associated with a second nanopillar.

10. The μ-LED device according to claim 1 , wherein the reflector device comprises an optical separation element arranged between adjacent nanopillars.

11. The μ-LED device according to claim 1 , wherein the reflector arrangement in plan view is formed as a four-sided pyramid and a side surface of each of which faces a nanopillar.

12. The μ-LED device according to claim 1 , further comprising a plurality of columns and a plurality of reflector devices disposed on the carrier substrate adjacent the nanopillars, the nanopillars and the reflector devices forming a matrix array.

13. The μ-LED device according to claim 1 , further comprising a light-shaping structure including a microlens or a photonic structure, extending across the nanopillar towards the reflector device on each side.

14. The μ-LED device according to claim 13 , wherein the light-shaping structure extends at least partially into the nanopillar and/or the reflector structure.

15. A μ-display having a plurality of μ-LED devices according to claim 1 , wherein columns of the plurality of μ-LED devices are arranged in rows and columns.

16. The μ-LED device according to claim 1 , wherein the nanopillar and the reflector device comprises a common semiconductor layer.

17. The μ-LED device according to claim 1 , wherein the nanopillar is connected directly with the carrier substrate.

18. A μ-LED device comprising:

a carrier substrate;

a nanopillar on the carrier substrate, the nanopillar comprising an inner core including a doped semiconductor material of a first doping type, an active layer arranged on a surface of the inner core, and an outer layer including a doped semiconductor material of a first doping type arranged on the active layer, said active layer being substantially perpendicular to the carrier substrate, said nanopillar connecting at least indirectly to the carrier substrate and pointing in a longitudinal direction from the latter, wherein the active layer is configured to emit electromagnetic radiation and is arranged such that at least part of the radiation emission is transverse to the longitudinal direction; and

a reflector device arranged on the carrier substrate laterally to the nanopillar, which reflects the radiation emission transversely to the longitudinal direction at least partially into a main radiation direction running parallel to the longitudinal direction.

Assignments (1)

Priority Claims (17)

Continuity (3)

References Cited (355)