IP Library › Granted Patent US 12,266,641
Granted Patent B2
US 12,266,641 · App. 17/611,112 · Granted Apr 1, 2025

Multi-chip carrier structure

Inventors: Alexander Pfeuffer (Regensburg, DE); Korbinian Perzlmaier (Regensburg, DE); Kerstin Neveling (Pentling, DE)
Assignee: OSRAM Opto Semiconductors GmbH
H01L25/0753H01L33/24H01L33/505H01L33/60H01L33/32H01L2933/0083H01L2933/0091
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Quick Facts
Patent No.
US 12,266,641
App. No.
17/611,112
Granted
Apr 1, 2025
Kind
B2
Abstract

A support structure for receiving planar microchips, comprising a planar support substrate and at least two receiving elements. The receiving elements are connected to the carrier substrate and configured in such a way that they detachably hold a flat microchip between the at least two receiving elements in such a way that the microchip can be moved out with a defined minimum force transversely to a support structure plane.

Claims (27)

1. A support structure with planar optoelectronic components, including light emitting diodes (LEDs), comprising:

a flat carrier substrate; and

at least two receiving elements configured to detachably retain a first LED between respective contact areas of the at least two receiving elements that are in mechanical contact with the first LED, wherein the first LED can be moved out with a defined minimum force perpendicular to a carrier structural plane, wherein at least one receiving element of the at least two receiving elements is configured to simultaneously retain and/or support a second, adjacently arranged LED,

wherein at least one of the two receiving elements has a first contact area and a second contact area, the first contact area in mechanical contact with the first LED and the second contact area in mechanical contact with the second, adjacently arranged LED.

2. The support structure according to claim 1 , wherein the receiving elements are arranged on the support substrate such that the first LED is held by three receiving elements.

3. The support structure according to claim 2 , wherein a holding area between the first LED and one of the three receiving elements is about twice the holding area between the first LED and another one of the three receiving elements.

4. The support structure according to claim 2 , wherein a holding area between the first LED and one of the three receiving elements extends along a side edge of the first LED and a holding area between the first LED and another one of the three receiving elements extends along a corner of the first LED opposite the side edge.

5. The support structure according to claim 1 , wherein at least two receiving elements of the three receiving elements are each designed to hold and/or support a further adjacently arranged structural element.

6. The support structure according to claim 1 , wherein a delamination layer is provided, which is arranged between the receiving element and the optoelectronic component and is configured to remain on the receiving element when the defined minimum force perpendicular to a carrier structural plane is applied to the first LED.

7. The support structure according to claim 1 , wherein the receiving elements are arranged in a mesa trench of a semiconductor wafer.

8. The support structure according to claim 1 , wherein the support substrate and the receiving elements are integrally formed.

9. The support structure according to claim 1 , wherein the receiving elements are configured to hold an optoelectronic device laterally and from an underside of the device.

10. The support structure according to claim 1 , wherein the receiving elements comprise component retaining surfaces sloping away relative to the support substrate plane, so that a retaining force on the optoelectronic component is reduced when the component is moved away from the receiving elements.

11. The support structure according to claim 1 , wherein the at least two receiving elements are spaced apart such that the first contact area is in mechanical contact with a lateral corner portion or side surface of the first LED.

12. The support structure according to claim 1 , wherein a contact area between the receiving elements and the optoelectronic component is smaller than 1/20, in particular smaller than 1/50, of a Total Area of the Component.

13. The support structure according to claim 1 , wherein the at least one receiving element partially supports the first LED and the second LED, and a portion of a surface of the receiving element is exposed between the first and second LEDs or rises between the first and second LEDs.

14. An optoelectronic device, comprising:

a semiconductor layer stack having an active layer disposed on a support structure with planar optoelectronic components including light emitting diodes (LEDs); and

wherein the support structure comprises:

a flat carrier substrate; and

at least two receiving elements configured to detachably retain a first LED between respective contact areas of the at least two receiving elements that are in mechanical contact with the first LED, wherein the first LED can be moved out with a defined minimum force perpendicular to a carrier structural plane, wherein at least one receiving element of the at least two receiving elements is configured to simultaneously retain and/or support a second, adjacently arranged LED,

wherein at least one of the two receiving elements has a first contact area and a second contact area, the first contact area in mechanical contact with the first LED and the second contact area in mechanical contact with the second, adjacently arranged LED.

15. The optoelectronic device of claim 14 , wherein the optoelectronic device has an edge region formed by a mesa trench, the active layer in the edge region having a bandgap increased by quantum well intermixing.

16. The optoelectronic device according to claim 14 , wherein an edge region of the optoelectronic device comprises a protuberance disposed on the support structure.

17. A method for transferring at least two optoelectronic components including light emitting diodes (LEDs), the at least two optoelectronic components being arranged on a common receiving element of a support and the support comprising a sacrificial layer between the at least two optoelectronic components and the common receiving element on which the optoelectronic components are arranged, the method comprising:

removing the sacrificial layer on which the optoelectronic components are arranged, so that the optoelectronic components are held by the common receiving element; and

removing at least one of the at least two optoelectronic components from the common receiving element.

Assignments (1)
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Mar 24, 2022
From: PFEUFFER, ALEXANDER; PERZLMAIER, KORBINIAN; NEVELING, KERSTIN
To: OSRAM OPTO SEMICONDUCTORS GMBH
Reel/Frame 059385/0446 →
Priority Claims (2)
DE 10 2019 112 490.5 · May 13, 2019 · national
WO PCT/EP2020/052191 · Jan 29, 2020 · international
Continuity (1)
Related Publication 20220223756A1 · Jul 14, 2022
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