Structure and method for integrated circuit
The present disclosure provides many different embodiments of an IC device. The IC device includes a gate stack disposed over a surface of a substrate and a spacer disposed along a sidewall of the gate stack. The spacer has a tapered edge that faces the surface of the substrate while tapering toward the gate stack. Therefore the tapered edge has an angle with respect to the surface of the substrate.
1. A method comprising:
forming a gate stack over a substrate;
forming a sidewall spacer along a sidewall of the gate stack;
removing a portion of the sidewall spacer to form a cavity within the sidewall spacer, the cavity having a decreasing height towards the gate stack, wherein the removing of the portion of the sidewall spacer to form the cavity within the sidewall spacer forms a modified sidewall spacer, and wherein the modified sidewall spacer includes an inclined edge that faces the substrate while inclining toward the gate stack and another edge that is substantially perpendicular to the substrate that physically contacts the inclined edge, wherein the another edge includes a portion that extends to the substrate beyond the point of contact with the inclined edge, wherein the another edge and the inclined edge are formed of the same material;
after removing the portion of the sidewall spacer to form the cavity within the sidewall spacer, implanting dopants into a portion of the substrate;
removing the portion of the substrate that includes the implanted dopants to form a recess within the substrate; and
forming a source/drain feature in the recess.
2. The method of claim 1 , wherein the portion of the substrate defines a bottom surface of the cavity prior to the removing of the portion of the substrate.
3. The method of claim 1 , wherein the forming of the sidewall spacer along the sidewall of the gate stack further includes forming the sidewall spacer directly on the portion of the substrate such that the portion of the substrate is covered by the sidewall spacer.
4. The method of claim 3 , wherein the removing of the portion of the sidewall spacer to form the cavity within the sidewall spacer further includes removing the portion of the sidewall spacer to expose the portion of the substrate.
5. The method of claim 1 , wherein the forming of the source/drain feature in the recess further includes forming the source/drain feature within the cavity such that the source/drain feature interfaces with portions of the sidewall spacer defining the cavity.
6. The method of claim 1 , wherein the forming of the sidewall spacer along the sidewall of the gate stack includes:
depositing a dielectric layer over the gate stack; and
performing an anisotropic etching process on the dielectric layer.
7. The method of claim 1 ,
forming another gate stack over the substrate;
forming another sidewall spacer along another sidewall of the another gate stack;
removing a portion of the another sidewall spacer to form another cavity within the another sidewall spacer; and
forming another source/drain feature in the another cavity, the another source/drain feature being formed of a different material than the source/drain feature.
8. A method comprising:
forming a gate stack over a substrate;
forming a sidewall spacer along a sidewall of the gate stack;
removing a portion of the sidewall spacer to form a modified sidewall spacer, the modified sidewall spacer including an inclined edge that faces the substrate while inclining toward the gate stack, wherein the modified sidewall spacer further includes another edge that is substantially perpendicular to the substrate that physically contacts the inclined edge, wherein the another edge includes a portion that extends to the substrate beyond the point of contact with the inclined edge, wherein the another edge and the inclined edge are formed of the same material; and
forming a source/drain feature that interfaces with the inclined edge.
9. The method of claim 8 , further comprising removing a portion of the substrate to form a recess, and
wherein the forming of the source/drain feature that interfaces with the inclined edge further includes forming the source/drain feature in the recess.
10. The method of claim 9 , wherein the portion of the substrate is disposed directly under the inclined edge.
11. The method of claim 8 , wherein the distance between a top surface of the substrate and the inclined edge decreases as the inclined edge inclines toward the gate stack.
12. The method of claim 8 , wherein the forming of the source/drain feature incudes performing an epitaxial process.
13. The method of claim 8 , wherein the inclined edge interfaces with the substrate after the removing of the portion of the sidewall spacer to form the modified sidewall spacer.
14. The method of claim 8 , further comprising:
implanting dopants into a portion of the substrate; and
removing the portion of the substrate that includes the implanted dopants to form a recess within the substrate, and
wherein the forming of the source/drain feature that interfaces with the inclined edge further includes forming the source/drain feature in the recess.
15. A method comprising:
forming a first spacer along a sidewall of a first gate stack disposed over a substrate;
removing a portion of the first spacer to form a first cavity within the first spacer, wherein the first cavity decreases in size as the cavity extends towards the first gate stack, wherein the removing of the portion of the first spacer to form the first cavity within the first spacer forms a first modified sidewall spacer, wherein the first modified sidewall spacer includes an inclined edge that faces the substrate while inclining toward the first gate stack and another edge that is substantially perpendicular to the substrate that physically contacts the inclined edge, wherein the another edge includes a portion that extends to the substrate beyond the point of contact with the inclined edge, wherein the another edge and the inclined edge are formed of the same material;
after removing the portion of the first spacer to form the first cavity within the first spacer, forming a first recess in the substrate adjacent the first gate stack without the recess extending under the first gate stack; and
forming a first source/drain feature in the first recess.
16. The method of claim 15 , further comprising:
forming a second spacer along a sidewall of a second gate stack disposed over the substrate;
removing a portion of the second spacer to form a second cavity within the second spacer;
forming a second recess in the substrate adjacent the second gate stack; and
forming a second source/drain feature in the second recess and the second cavity, the second source/drain feature being formed of a different material than the first source/drain feature.
17. The method of claim 16 , wherein the first source/drain feature includes silicon and the second source/drain feature includes germanium.
18. The method of claim 15 , wherein the removing of the portion of the first spacer to form the first cavity within the first spacer includes performing a wet etching process.
19. The method of claim 15 , wherein the removing of the portion of the first spacer to form the first cavity within the first spacer includes performing a dry etching process.
20. The method of claim 15 , further comprising implanting a dopant into a portion of the substrate after the removing of the portion of the first spacer to form the first cavity within the first spacer, and
wherein the forming of the first recess in the substrate adjacent the first gate stack includes removing at least some of the portion of the substrate.