Instant and permanent self-destruction method in 3D NAND for data security purpose
Apparatuses and techniques are described for performing an operation which irreversibly prevents access to a set of memory cells. The operation provides a strong erase bias for select gate transistors of NAND strings. The erase bias induces a phenomenon in the select gate transistors which permanently increases their threshold voltages. This prevents access to the memory cells such as for program or read operations. The operation can involve one or more erase-verify iterations. In each erase-verify iteration, an erase bias is applied to the select gate transistors such as by charging up the channels of the NAND strings and holding a control gate voltage of the select gate transistors at a relatively low level, thereby causing a relatively high channel-to-control gate voltage.
1. An apparatus, comprising:
a control circuit configured to connect to a plurality of memory cells, the plurality of memory cells are arranged in NAND strings, each NAND string comprising a first end and a second end, and a select gate transistor at the first end of the NAND string, and the control circuit is configured to:
perform an operation which prevents access to the plurality of memory cells, wherein to perform the operation, the control circuit is configured to apply an erase bias to the select gate transistors at the first end of the NAND strings and to determine whether threshold voltages of the select gate transistors at the first end of the NAND strings increase, in response to the erase bias, above a verify voltage, the verify voltage is greater than a highest programmed threshold voltage of the plurality of memory cells.
2. The apparatus of claim 1 , wherein:
the determining whether the threshold voltages of the select gate transistors at the first end of the NAND strings increase, in response to the erase bias, above the verify voltage comprises determining whether a minimum number of the select gate transistors at the first end of the NAND strings have a threshold voltage above the verify voltage.
3. The apparatus of claim 1 , wherein:
the applying of the erase bias and the determining whether the threshold voltages of the select gate transistors at the first end of the NAND strings increase, in response to the erase bias, above the verify voltage, are performed in one or more erase-verify iterations of the operation.
4. The apparatus of claim 1 , wherein:
each NAND string comprises a select gate transistor at the second end of the NAND strings; and
the control circuit is configured to apply an erase bias to the select gate transistors at the second end of the NAND strings in the operation.
5. The apparatus of claim 1 , wherein:
to apply the erase bias to the select gate transistors at the first end of the NAND strings, the control circuit is configured to charge up channels of the NAND strings to an erase voltage while applying a control gate voltage to the select gate transistors at the first end of the NAND strings; and
the erase voltage exceeds the control gate voltage by at least 15 V.
6. The apparatus of claim 1 , wherein:
the first end of the NAND strings is a drain end of the NAND strings.
7. The apparatus of claim 1 , wherein:
the first end of the NAND strings is a source end of the NAND strings.
8. The apparatus of claim 1 , wherein the control circuit is configured to:
apply the erase bias concurrently to select gate transistors at the first end of the NAND strings in a plurality of blocks; and
the determining whether the threshold voltages of the select gate transistors at the first end of the NAND strings increase, in response to the erase bias, above the verify voltage, comprises determining whether a minimum number of the select gate transistors at the first end of the NAND strings in one selected block of the plurality of blocks have a threshold voltage above the verify voltage.
9. The apparatus of claim 8 , wherein:
the one selected block is a User ROM block; and
remaining blocks of the plurality of blocks comprise user data blocks.
10. The apparatus of claim 1 , wherein:
the control circuit is configured to apply the erase bias concurrently to select gate transistors at the first end of the NAND strings in a single block; and
the determining whether the threshold voltages of the select gate transistors at the first end of the NAND strings increase, in response to the erase bias, above the verify voltage, comprises determining whether a minimum number of the select gate transistors at the first end of the NAND strings in the single block have a threshold voltage above the verify voltage.
11. The apparatus of claim 1 , wherein:
the control circuit is configured to apply the erase bias concurrently to select gate transistors at the first end of the NAND strings in a single sub-block of a block; and
the determining whether the threshold voltages of the select gate transistors at the first end of the NAND strings increase, in response to the erase bias, above the verify voltage, comprises determining whether a minimum number of the select gate transistors at the first end of the NAND strings in the single sub-block of the block have a threshold voltage above the verify voltage.
12. The apparatus of claim 1 , wherein:
the operation irreversibly increases threshold voltages of at least a minimum number of the select gate transistors by at least 2 V.
13. A method, comprising:
applying an erase bias to a first select gate transistor in a NAND string in one or more erase-verify iterations of an operation, the applying of the erase bias irreversibly increases a threshold voltage of the select gate transistor by at least 2 V; and
determining in the one or more erase-verify iterations whether a threshold voltage of the first select gate transistor has increased above a verify voltage in response to the erase bias.
14. The method of claim 13 , further comprising:
applying an erase bias to a second select gate transistor in a NAND string in the one or more erase-verify iterations, wherein the first select gate transistor is at a first end of the NAND string and the second select gate transistor is at a second end of the NAND string.
15. An apparatus, comprising:
a control circuit configured to connect to a plurality of memory cells, the plurality of memory cells are arranged in NAND strings, and the NAND strings comprise select gate transistors; and
a memory interface connected to the control circuit, the control circuit is configured to issue a command via the memory interface to perform an operation which irreversibly increases threshold voltages of the select gate transistors above a verify voltage, wherein the operation applies a channel-to-gate voltage to the select gate transistors of at least 15 V.
16. The apparatus of claim 15 , wherein:
the NAND strings extend vertically in a stack; and
the select gate transistors are at a top of the stack.
17. The apparatus of claim 15 , wherein:
the NAND strings extend vertically in a stack; and
the select gate transistors are at a bottom of the stack.