Smart electronic switch
An integrated circuit that may be employed as a smart switch is described herein. The integrated circuit may include a first power transistor coupled between a supply pin and a first output pin and a second power transistor coupled between the supply pin and a second output pin. The first and the second power transistors each having an intrinsic body diode which allows reverse conduction. The integrated circuit further includes a control circuit that is configured to trigger a switch-on and switch-off of the first and the second power transistors based on a first input signal and a second input signal, respectively. Furthermore, the integrated circuit includes a protection circuit configured to detect, for the first and the second power transistors, a transition from a reverse conducting state into a forward conducting state, and vice versa, and to generate an error signal in response to certain detections.
1. An integrated circuit comprising:
a first power transistor coupled between a supply pin and a first output pin,
a second power transistor coupled between the supply pin and a second output pin, the first and the second power transistors each having an intrinsic body diode which allows reverse conduction;
a control circuit configured to trigger a switch-on and switch-off of the first and the second power transistors based on a first input signal and a second input signal, respectively; and
a protection circuit configured to detect, for the first and the second power transistors, a transition from a reverse conducting state into a forward conducting state, and vice versa, and to generate an error signal when detecting a transition from a reverse conducting state into a forward conducting state for the second power transistor and a transition from a forward conducting state into a reverse conducting state for the first power transistor.
2. The integrated circuit of claim 1 ,
wherein the protection circuit is configured to generate the error signal when detecting the transition from a reverse conducting state into a forward conducting state for the second power transistor immediately followed by the transition from a forward conducting state into a reverse conducting state for the first power transistors.
3. The integrated circuit of claim 1 , further comprising:
a current sense circuit configured to generate a first current sense signal representing a load current passing through the first power transistor when in a forward conducting state and a second current sense signal representing a load current passing through the second power transistor when in a forward conducting state.
4. The integrated circuit of claim 3 ,
wherein the first and the second current sense signals are zero when the first and, respectively, second power transistors are in a reverse conducting state.
5. The integrated circuit of claim 3 ,
wherein the protection circuit is configured to detect, for the first and the second power transistors, the transition from the reverse conducting state into the forward conducting state, and vice versa, based on the first and, respectively, the second current sense signals.
6. The integrated circuit of claim 1 ,
wherein the protection circuit is configured to detect, for the first and the second power transistors, the transition from the reverse conducting state into the forward conducting state, and vice versa, based on a voltage drop across the load current paths of the first and, respectively, the second power transistors.
7. The integrated circuit of claim 1 ,
wherein the control circuit is configured to trigger a switch-off of the second power transistor, or both the first and second power transistors, in response to the error signal.
8. A method comprising:
switching on a first power transistor and a second power transistor, which are connected back-to-back, based on an input signal, wherein the first and the second power transistors each have an intrinsic body diode which allows reverse conduction;
providing load current to a load connected to the second power transistor;
generating an error signal when detecting a transition from a reverse conducting state into a forward conducting state for the second power transistor and a transition from a forward conducting state into a reverse conducting state for the first power transistor.
9. The method of claim 8 ,
wherein the error signal is generated when detecting the transition from a reverse conducting state into a forward conducting state for the second power transistor immediately followed by the transition from a forward conducting state into a reverse conducting state for the first power transistors.
10. The method of claim 8 , further comprising:
generating a first current sense signal that represents a load current passing through the first power transistor when in a forward conducting state, and
generating a second current sense signal representing a load current passing through the second power transistor when in a forward conducting state.
11. The method of claim 10 ,
wherein the first and the second current sense signals are zero when the first and, respectively, second power transistors are in a reverse conducting state.
12. The method of claim 10 , wherein generating the error signal comprises:
detecting, for the first and the second power transistors, the transition from the reverse conducting state into the forward conducting state, and vice versa, based on the first and, respectively, the second current sense signals.
13. The method of claim 8 , wherein generating the error signal comprises:
detecting, for the first and the second power transistors, the transition from the reverse conducting state into the forward conducting state, and vice versa, based on a voltage drop across the load current paths of the first and, respectively, the second power transistors.
14. The method of claim 8 , further comprising:
triggering a switch-off of the second power transistor, or both power transistors, in response to the error signal.