IP Library Granted Patent US 11,522,004
Granted Patent B2
US 11,522,004 · App. 17/002,042 · Granted Dec 6, 2022

Absorption enhancement structure for image sensor

Inventors: Ching-Chung Su (Tainan, TW); Hung-Wen Hsu (Tainan, TW); Jiech-Fun Lu (Madou Township, TW); Shih-Pei Chou (Tainan, TW)
Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
H01L27/14685H01L27/1462H01L27/1463H01L27/1464H01L27/14621H01L27/14627H01L27/14643H01L27/14689
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Quick Facts
Patent No.
US 11,522,004
App. No.
17/002,042
Granted
Dec 6, 2022
Kind
B2
Abstract

The present disclosure relates to an integrated chip. The integrated chip includes an image sensing element disposed within a substrate. The substrate has a plurality of protrusions disposed along a first side of the substrate over the image sensing element and a ridge disposed along the first side of the substrate. The ridge continuously extends around the plurality of protrusions.

Claims (34)

1. An integrated chip, comprising:

an image sensing element disposed within a substrate, wherein the substrate comprises a plurality of protrusions disposed along a first side of the substrate over the image sensing element and a ridge disposed along the first side of the substrate; and

wherein the ridge continuously extends around the plurality of protrusions.

2. The integrated chip of claim 1 , wherein the ridge has a substantially flat upper surface that extends around the plurality of protrusions along a closed loop.

3. The integrated chip of claim 1 , wherein the plurality of protrusions are defined by sidewalls having a cross-sectional profile with a first slope at a first point that is a first distance over the image sensing element and a second slope at a second point that is a second distance over the image sensing element, the second distance larger than the first distance.

4. The integrated chip of claim 1 , further comprising:

a second image sensing element disposed within the substrate, wherein the substrate comprises a second plurality of protrusions disposed along the first side of the substrate over the second image sensing element; and

wherein the ridge continuously extends around the plurality of protrusions along a first closed loop and the ridge continuously extends around the second plurality of protrusions along a second closed loop that shares a side with the first closed loop.

5. The integrated chip of claim 1 , wherein the plurality of protrusions comprise a first protrusion that is defined by a flat surface, and wherein the flat surface is separated from a top of the first protrusion by a non-zero distance.

6. The integrated chip of claim 1 , wherein the plurality of protrusions comprise a first protrusion having a first height, and wherein the first protrusion is defined by a flat surface having a second height that is less than the first height.

7. The integrated chip of claim 1 , wherein the plurality of protrusions comprise a first protrusion having a height and a width measured along largest dimensions of the first protrusion, wherein a ratio between the height and the width is in a range of between approximately 1 and approximately 1.25.

8. The integrated chip of claim 1 , wherein the plurality of protrusions comprise a first protrusion having a height in a range of between approximately 400 nm and approximately 600 nm and having a width in a range of between approximately 400 nm and approximately 500 nm.

9. The integrated chip of claim 1 , wherein the ridge extends in a closed loop that surrounds not more than 16 protrusions and not less than 16 protrusions.

10. An integrated chip, comprising:

a substrate;

an image sensing element disposed within the substrate; and

wherein the substrate has one or more surfaces extending between a bottom and a top of a protrusion over the image sensing element, wherein a slope of the one or more surfaces increases from a first point a first distance over image sensing element to a second point a second distance over the image sensing element, the second distance greater than the first distance.

11. The integrated chip of claim 10 ,

wherein the one or more surfaces of the substrate comprise a first sidewall having a first segment as viewed in a cross-sectional view; and

wherein an imaginary line extending along the first segment intersects a second sidewall of the protrusion opposing the first sidewall.

12. The integrated chip of claim 10 , wherein the one or more surfaces comprise a curved surface.

13. The integrated chip of claim 12 , wherein the one or more surfaces further comprise a flat surface.

14. The integrated chip of claim 13 , wherein the flat surface is vertically between the curved surface and the image sensing element.

15. The integrated chip of claim 13 , wherein the protrusion comprises a height and a width measured along largest dimensions of the protrusion, wherein a ratio between the height and the width is in a range of between approximately 1 and approximately 1.2.

16. An integrated chip, comprising:

an image sensing element disposed within a substrate;

wherein the substrate comprises a plurality of protrusions along a first side of the substrate and a ridge along the first side of the substrate, the ridge surrounding the plurality of protrusions; and

wherein the ridge has a greater width than respective ones of the plurality of protrusions.

17. The integrated chip of claim 16 , wherein the ridge has a different cross-sectional profile than the respective ones of the plurality of protrusions.

18. The integrated chip of claim 16 , wherein the plurality of protrusions comprise a first protrusion having sidewalls that meet at a top of the first protrusion.

19. The integrated chip of claim 16 , wherein the plurality of protrusions comprise a first protrusion separated from a second protrusion by a surface of the substrate having a width of between approximately 0 nm and approximately 15 nm.

20. The integrated chip of claim 16 ,

wherein the plurality of protrusions comprise a first protrusion and a second protrusion; and

wherein a sidewall of the first protrusion intersects a sidewall of the second protrusion.

Assignments (2)
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Aug 5, 2024
From: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LIMITED
To: PARABELLUM STRATEGIC OPPORTUNITIES FUND LLC
Reel/Frame 068326/0474 →
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Aug 25, 2020
From: SU, CHING-CHUNG; HSU, HUNG-WEN; LU, JIECH-FUN; CHOU, SHIH-PEI
To: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.
Reel/Frame 053589/0640 →
Continuity (5)
Continuation 16693627 · Nov 25, 2019
Continuation 16420576 · May 23, 2019
Continuation 16190608 · Nov 14, 2018
Division 15597452 · May 17, 2017
Related Publication 20200388647A1 · Dec 10, 2020