Semiconductor substrate production systems and related methods

1. A method of separating a semiconductor substrate from a boule comprising a semiconductor material, the method comprising:

creating a damage layer in a first end of a boule comprising semiconductor material;

heating a bulk material of the boule; and

cooling the boule to separate one or more semiconductor substrates from the boule at the damage layer.

2. The method of claim 1 , wherein a thermal gradient between the first end and the bulk material of the boule assists the one or more semiconductor substrates with separating from the boule at the damage layer in the first end of the boule.

3. The method of claim 1 , wherein the damage layer is created through laser irradiation.

4. The method of claim 1 , further comprising creating a second damage layer in a second end of the boule.

5. The method of claim 4 , wherein a thermal gradient between the second end and the bulk material of the boule assists the one or more semiconductor substrates with separating from the boule at the damage layer in the second end of the boule.

6. The method of claim 1 , wherein cooling the boule further comprises contacting the boule with liquid nitrogen.

7. The method of claim 1 , wherein heating the boule comprises using a furnace or heated bath.

8. A method of separating a semiconductor substrate from a boule comprising a semiconductor material, the method comprising:

creating a damage layer in a first end of a boule comprising semiconductor material;

cooling the boule; and

heating the boule after cooling the boule to separate one or more semiconductor substrates from the boule at the damage layer.

9. The method of claim 8 , wherein a thermal gradient between the first end and a bulk material of the boule assists the one or more semiconductor substrates with separating from the boule at the damage layer in the first end of the boule.

10. The method of claim 8 , wherein the damage layer is created through laser irradiation.

11. The method of claim 8 , further comprising creating a second damage layer in a second end of the boule.

12. The method of claim 11 , wherein a thermal gradient between the second end and a bulk material of the boule assists the one or more semiconductor substrates with separating from the boule at the damage layer in the second end of the boule.

13. The method of claim 8 , wherein cooling the boule further comprises contacting the boule with liquid nitrogen.

14. The method of claim 8 , wherein heating the boule comprises using a furnace or heated bath.

15. A method of separating a wafer from a boule of silicon carbide, the method comprising:

one of cooling or heating a boule of silicon carbide;

creating a damage layer in at least a first end of the boule;

creating a second damage layer in a second end of the boule;

creating a thermal gradient between the first end and a bulk material of the boule; and

separating a silicon carbide wafer from the boule at the damage layer.

16. The method of claim 15 , wherein heating the boule comprises using a furnace or heated bath.

17. The method of claim 15 , wherein cooling the boule further comprises contacting the boule with liquid nitrogen.

18. The method of claim 15 , wherein the thermal gradient between the second end and a bulk material of the boule assists a silicon carbide wafer with separating from the boule at the damage layer in the second end of the boule.

19. The method of claim 15 , wherein the thermal gradient between the first end and the bulk material of the boule assists a silicon carbide wafer with separating from the boule at the damage layer in the first end of the boule.

20. The method of claim 1 , wherein the damage layer is created from a source different from a source used to heat the bulk material of the boule.