CAM storage schemes and CAM read operations for detecting matching keys with bit errors
A memory array includes strings that are configured to store keywords and inverse keywords corresponding to keys according to content addressable memory (CAM) storages schemes. A read circuit performs a CAM read operation over a plurality of iterations to determine which of the keywords are matching keywords that match a target keyword. During the iterations, a read controller biases word lines according to a plurality of modified word line bias setting that are each modified from an initial word line bias setting corresponding to the target keyword. At the end of the CAM read operation, the read controller detects which of the keywords are matching keywords, even if the strings are storing the keywords or inverse keywords with up a certain number of bit errors.
1. A circuit comprising:
a controller configured to:
generate a keyword for a key to be stored in a memory array according to a content addressable memory (CAM) storage scheme, the keyword comprising a plurality of information bits of the key and a plurality of parity bits determined from the plurality of information bits;
generate an inverse keyword based on the keyword;
program the keyword and the inverse keyword according to the CAM storage scheme; and
program a plurality of keywords into the memory array,
wherein any two different keywords of the plurality of keywords has a minimum distance of 2*t+1, wherein t is a maximum number of bit errors with which the memory array stores each of the two different keywords.
2. A circuit comprising:
a controller configured to:
generate a keyword for a key to be stored in a memory array according to a content addressable memory (CAM) storage scheme, the keyword comprising a plurality of information bits of the key and a plurality of parity bits determined from the plurality of information bits;
generate an inverse keyword based on the keyword;
program the keyword and the inverse keyword according to the CAM storage scheme;
bias a plurality of word lines coupled to the memory array according to a plurality of modified word line bias settings, each modified from an initial word line bias setting that corresponds to a target keyword or an inverse target keyword and based on a bit error number associated with storage of the keyword; and
determine that the keyword matches the target keyword in response to the bias;
a sense circuit configured to determine a plurality of sense results of a plurality of sense operations for a set of memory cells coupled to the plurality of word lines during the bias of the plurality of word lines according to the plurality of modified bias settings; and
OR logic circuitry configured to perform an OR logic operation generate a combined sense result based on the plurality of sense results,
wherein the controller is configured to determine that the keyword matches a target keyword based on the combined sense result;
wherein the plurality of word lines comprises a first plurality of word lines, the plurality of modified bias settings comprises a first plurality of modified bias settings, the plurality of sense results comprises a first plurality of sense results, the plurality of sense operations for the set of memory cells comprises a first plurality of sense operations for a first set of memory cells storing at least a portion of the keyword, the OR logic operation comprises a first OR logic operation, and the combined sense result comprises a first combined sense result,
wherein the sense circuit is further configured to determine a second plurality of sense results of a second plurality of sense operations for a second set of memory cells storing at least a portion of the inverse keyword,
wherein the OR logic circuitry is configured to perform a second OR logic operation to generate a second combined sense result based on the second plurality of sense results,
wherein the circuit further comprises AND logic circuitry configured to perform an AND logic operation on the first combined sense result and the second combined sense result to generate a final sense result, and
wherein the controller is configured to determine that the keyword matches the target keyword further based on the final sense result.
3. The circuit of claim 2 , wherein the controller is configured to bias a word line of the plurality of word lines at a low voltage level according to the initial word line bias setting, and is configured to bias the word line at the high voltage level according to a modified word line bias setting.
4. A circuit comprising:
a controller configured to:
generate a keyword for a key to be stored in a memory array according to a content addressable memory (CAM) storage scheme, the keyword comprising a plurality of information bits of the key and a plurality of parity bits determined from the plurality of information bits;
generate an inverse keyword based on the keyword;
program the keyword and the inverse keyword according to the CAM storage scheme, wherein the keyword comprises a plurality of keyword portions, and wherein the controller, in order to generate the plurality of keyword portions, is configured to:
divide the key into a plurality of key portions; and
generate a respective set of parity bits for each of the key portions; and
program a plurality of keywords into the memory array, wherein each of the plurality of keywords comprises an associated plurality of keyword portions,
wherein any two different keyword portions has a minimum distance of 2*t+1, wherein t is a maximum number of bit errors with which the memory array stores each of the two different keyword portions.
5. The circuit of claim 4 , wherein the controller, in order to generate the inverse keyword, is configured to generate a respective inverse keyword portion for each of the keyword portions.