Electrode contacts
A device structure providing contact to conductive layers via a deep trench structure is disclosed. The device includes a first dielectric layer including a first opening. A first conductive layer is deposited over the first dielectric layer and the first opening. A second dielectric layer is deposited on the first conductive layer. The second dielectric layer includes a second opening. A second conductive layer is deposited over the second dielectric layer and the first and second openings. A semiconductor layer is deposited on the second dielectric layer such that the semiconductor layer is not continuous on at least part of the walls of the first or second openings. A top electrode layer is deposited on the semiconductor layer. The top electrode layer is in contact with the second conductive layer on at least part of the walls of the first or second openings.
1. A device structure comprising:
a material structure including a top surface and a side wall integral with and joining the top surface;
at least one material layer deposited on the material structure, the at least one material layer being continuous on a first area of the material structure, continuously covering a first portion of the side wall, and having at least one discontinuity on a second portion of the side wall, the second portion of the sidewall located between the first area of the material structure and the first portion of the sidewall; and
a second layer deposited on the at least one material layer, the second layer in contact with the material structure on the second portion of the side wall and separated from the material structure by the at least one material layer on the first portion of the side wall and in the first area of the material structure, the at least one material layer comprising material different from a material of the second layer,
wherein the at least one material layer prevents electrical contact between the material structure and the second layer on the first portion of the side wall.
2. The device structure of claim 1 , wherein the second layer comprises a first conductive layer and the material structure comprises a second conductive layer forming the side wall and the first area of the material structure.
3. The device structure of claim 1 , wherein the at least one discontinuity in the at least one material layer provides electrical contact between the material structure and the second layer on the second portion of the side wall.
4. The device structure of claim 1 , wherein the side wall is created by one of lithography, lift off, moulding or shadow masking.
5. The device structure of claim 1 , wherein the at least one material layer is part of an organic light emitting diode structure.
6. The device structure of claim 1 , wherein the material structure comprises at least one of a silicon-nitride dielectric layer and a polymer dielectric layer.
7. The device structure of claim 1 , wherein the material structure comprises at least one layer, and wherein the at least one layer of the material structure, the second layer, and the at least one material layer are deposited via at least one of PECVD, CVD, sputtering, vapor deposition, printing, spin coating, and spray coating.
8. The device structure of claim 1 , wherein the first area of the material structure is located on the top surface of the material structure.
9. The device structure of claim 1 , wherein the first area of the material structure is located on the side wall of the material structure.
10. A device structure comprising:
a material structure including a top surface and a side wall integral with and joining the top surface;
at least one material layer deposited on the material structure, the at least one material layer being continuous on a first area of the material structure, continuously covering a first portion of the side wall, and having at least one discontinuity on a second portion of the side wall, the second portion of the sidewall located between the first area of the material structure and the first portion of the sidewall; and
a second layer deposited on the at least one material layer, the second layer in contact with the material structure on the second portion of the side wall and separated from the material structure by the at least one material layer on the first portion of the side wall and in the first area of the material structure, the at least one material layer comprising material different from a material of the second layer,
wherein the at least one material layer comprises at least one of a semiconductor layer and a dielectric layer.
11. A method of fabricating a device structure, the method comprising:
fabricating a material structure including a top surface and a side wall integral with and joining the top surface;
depositing at least one material layer on the material structure, the at least one material layer being continuous on a first area of the material structure, continuously covering a first portion of the side wall, and having at least one discontinuity on a second portion of the side wall, the second portion of the sidewall located between the first area of the material structure and the first portion of the sidewall; and
depositing a second layer on the at least one material layer, the second layer in contact with the material structure on the second portion of the side wall and separated from the material structure by the at least one material layer on the first portion of the side wall and in the first area of the material structure, the at least one material layer comprising material different from a material of the second layer,
wherein the at least one material layer is deposited such that the at least one material layer prevents electrical contact between the material structure and the second layer on the first portion of the side wall.
12. The method of claim 11 , wherein depositing the second layer comprises depositing a first conductive layer and fabricating the material structure comprises depositing a second conductive layer forming the side wall and the first area of the material structure.
13. The method of claim 11 , wherein the at least one material layer is deposited such that the at least one discontinuity in the at least one material layer provides electrical contact between the material structure and the second layer on the second portion of the side wall.
14. The method of claim 11 , wherein the side wall is fabricated at least in part by one of lithography, lift off, moulding or shadow masking.
15. The method of claim 11 , wherein the at least one material layer is part of an organic light emitting diode structure.
16. The method of claim 11 , wherein the material structure comprises at least one of a silicon-nitride dielectric layer and a polymer dielectric layer.
17. The method of claim 11 , wherein the material structure comprises at least one layer, and wherein the at least one layer of the material structure is fabricated at least partly via, and the second layer and the at least one material layer are deposited via, at least one of PECVD, CVD, sputtering, vapor deposition, printing, spin coating, and spray coating.
18. The method of claim 11 , wherein the first area of the material structure is located on the top surface of the material structure.
19. The method of claim 11 , wherein the first area of the material structure is located on the side wall of the material structure.
20. A method of fabricating a device structure, the method comprising:
fabricating a material structure including a top surface and a side wall integral with and joining the top surface;
depositing at least one material layer on the material structure, the at least one material layer being continuous on a first area of the material structure, continuously covering a first portion of the side wall, and having at least one discontinuity on a second portion of the side wall, the second portion of the sidewall located between the first area of the material structure and the first portion of the sidewall; and
depositing a second layer on the at least one material layer, the second layer in contact with the material structure on the second portion of the side wall and separated from the material structure by the at least one material layer on the first portion of the side wall and in the first area of the material structure, the at least one material layer comprising material different from a material of the second layer,
wherein the at least one material layer comprises at least one of a semiconductor layer and a dielectric layer.