Filter using transversely-excited film bulk acoustic resonators with divided frequency-setting dielectric layers
Acoustic filters and methods of fabrication are disclosed. A filter device includes a substrate and a single-crystal piezoelectric plate, a back surface of the piezoelectric plate attached to a surface of the substrate. The filter device includes a plurality of acoustic resonators including one or more shunt resonators and one or more series resonators. Each of the plurality of acoustic resonators includes an interdigital transducer (IDT) formed on the front surface of the piezoelectric plate, interleaved fingers of the IDT disposed on a respective diaphragm formed by a respective portion of the piezoelectric plate that spans a respective cavity in the substrate. A divided frequency setting layer is formed on at least some of the one or more shunt resonators but not on the one or more series resonators.
1. A filter device, comprising:
a substrate;
a single-crystal piezoelectric plate having front and back surfaces, the back surface attached to a surface of the substrate; and
a plurality of acoustic resonators including one or more shunt resonators and one or more series resonators, each of the plurality of acoustic resonators comprising:
an interdigital transducer (IDT) formed on the front surface of the piezoelectric plate, interleaved IDT fingers of the IDT disposed on a respective diaphragm formed by a respective portion of the piezoelectric plate that spans a respective cavity in the substrate; and
a divided dielectric frequency setting layer formed on at least some of the one or more shunt resonators but not on the one or more series resonators.
2. The device of claim 1 , wherein the divided frequency setting layer comprises:
a front-side frequency setting layer formed over the IDT fingers and the front surface of the diaphragms of the one or more shunt resonators, and
a back-side frequency setting layer formed on the back surface of the diaphragms of the one or more shunt resonators.
3. The device of claim 2 , wherein the front-side frequency setting layer and the back-side frequency setting layer are formed of the same dielectric material.
4. The device of claim 3 , wherein a thickness of the backside frequency setting layer is at least 30% of a total thickness of the front-side frequency setting layer and the back-side frequency setting layer.
5. The device of claim 3 , wherein a thickness of the backside frequency setting layer is greater than or equal to 35% of a total thickness of the front-side frequency setting layer and the back-side frequency setting layer and less than or equal to 50% of the total thickness of the front-side frequency setting layer and the back-side frequency setting layer.
6. The device of claim 3 , wherein
the front-side frequency setting layer and the back-side frequency setting layer are a material selected from silicon dioxide, silicon nitride, aluminum oxide, aluminum nitride, beryllium oxide, tantalum oxide, and tungsten oxide.
7. The device of claim 2 , wherein
the front-side frequency setting layer and the back-side frequency setting layer are two different materials selected from silicon dioxide, silicon nitride, aluminum oxide, aluminum nitride, beryllium oxide, tantalum oxide, and tungsten oxide.
8. The device of claim 7 , wherein a thickness of the front-side frequency setting layer and a thickness of the back-side frequency setting layer are configured such that a peak admittance of an A2 spurious mode is substantially reduced compared to a peak admittance of an A2 spurious mode of a resonator with only a front-side frequency setting layer.
9. The device of claim 2 , where a total thickness of the front-side frequency setting layer and the back-side frequency setting layer is greater than 25% of a thickness of the piezoelectric plate.
10. The device of claim 2 , wherein
the one or more shunt resonators comprise a first shunt resonator and a second shunt resonators, and
a first thickness of the front-side frequency setting layer formed over the first shunt resonator and a second thickness of the front-side frequency setting layer formed over the second shunt resonator are different.
11. The device of claim 1 , further comprising:
a passivation and tuning layer formed over all of the plurality of acoustic resonators.
12. A filter device, comprising:
a substrate;
a single-crystal piezoelectric plate having front and back surfaces, the back surface attached to a surface of the substrate;
a plurality of acoustic resonators connected in a ladder filter circuit, the plurality of acoustic resonators including one or more shunt resonators and one or more series resonators, each of the plurality of acoustic resonators comprising:
an interdigital transducer (IDT) formed on the front surface of the piezoelectric plate, interleaved IDT fingers of the IDT disposed on a respective diaphragm formed by a portion of the piezoelectric plate that spans a respective cavity in the substrate;
a first front-side frequency setting layer formed over the interleaved fingers and the front surface of the diaphragm of the one or more shunt resonators; and
a back-side frequency setting layer formed on the back surface of the diaphragm of the one or more shunt resonators, wherein
the first front-side frequency setting layer and back-side frequency setting layer are not formed over the IDT fingers and the front and back surfaces of the diaphragm of the one or more series resonators.
13. The device of claim 12 , wherein the first front-side frequency setting layer and the back-side frequency setting layer are formed of the same dielectric material.
14. The device of claim 13 , wherein a thickness of the backside frequency setting layer is at least 30% of a total thickness of the first front-side frequency setting layer and the back-side frequency setting layer.
15. The device of claim 13 , wherein a thickness of the backside frequency setting layer is greater than or equal to 35% of a total thickness of the first front-side frequency setting layer and the back-side frequency setting layer and less than or equal to 50% of the total thickness of the first front-side frequency setting layer and the back-side frequency setting layer.
16. The device of claim 12 , further comprising:
a passivation and tuning layer formed over all of the plurality of acoustic resonators.
17. The device of claim 12 , further comprising:
a second front-side frequency setting layer formed over the IDT fingers and front surface of the diaphragm of at least one of the plurality of acoustic resonators.
18. The device of claim 17 , wherein
the first front-side frequency setting layer, the second front-side frequency setting layer, and the back-side frequency setting layer are one or more materials selected from silicon dioxide, silicon nitride, aluminum oxide, aluminum nitride, beryllium oxide, tantalum oxide, and tungsten oxide.
19. The device of claim 12 , wherein a thickness of the first front-side frequency setting layer and a thickness of the back-side frequency setting layer are configured such that a peak admittance of an A2 spurious mode is substantially reduced compared to a peak admittance of an A2 spurious mode of a resonator without a back-side frequency setting layer.
20. The device of claim 12 , where a total thickness of the first front-side frequency setting layer and the back-side frequency setting layer is greater than 25% of a thickness of the piezoelectric plate.