Method of forming photoresist pattern
A method of forming a photoresist pattern includes forming a protective layer over a photoresist layer formed on a substrate. The protective layer and the photoresist layer are selectively exposed to actinic radiation. The photoresist layer is developed to form a pattern in the photoresist layer. The protective layer includes a polymer without a nitrogen-containing moiety, and a basic quencher, an organic acid, a photoacid generator, or a thermal acid generator.
1 . A method of forming a photoresist pattern, comprising:
forming a protective layer over a photoresist layer formed on a substrate,
wherein the protective layer consists essentially of a polymer without a nitrogen-containing moiety and without acid labile groups, and a basic quencher,
wherein the polymer is a polyfluoroalcohol;
selectively exposing the protective layer and the photoresist layer to actinic radiation;
generating a base from the basic quencher,
wherein the basic quencher is a photobase generator selected from the group consisting of quaternary ammonium dithiocarbamates, oxime-urethane containing molecules, dibenzophenoneoxime hexamethylene diurethan, ammonium tetraorganylborate salts, N-(2-nitrobenzyloxycarbonyl) cyclic amines, and α aminoketones, and combinations thereof; and
developing the photoresist layer to form a pattern in the photoresist layer.
2 . The method according to claim 1 , wherein a concentration of the basic quencher in the protective layer ranges from 0.1 wt. % to 10 wt. % based on a weight of the polymer and the basic quencher.
3 . A method of forming a photoresist pattern, comprising:
forming a photoresist layer comprising a photoresist composition over a substrate;
forming a protective layer consisting essentially of a basic quencher and a polymer without a nitrogen-containing moiety and without acid labile groups over the photoresist layer,
wherein the polymer is a polyfluoroalcohol, and
wherein the basic quencher is a photobase generator selected from the group consisting of quaternary ammonium dithiocarbamates, oxime-urethane containing molecules, dibenzophenoneoxime hexamethylene diurethan, ammonium tetraorganylborate salts, N-(2-nitrobenzyloxycarbonyl) cyclic amines, and a aminoketones, and combinations thereof;
forming a latent pattern in the photoresist layer by selectively exposing the photoresist layer to actinic radiation;
generating a base in the protective layer from the photobase generator and diffusing the base in the protective layer into the photoresist layer;
removing the protective layer; and
developing the photoresist layer to form a pattern in the photoresist layer.
4 . The method according to claim 3 , wherein portions of the photoresist layer exposed to the actinic radiation are removed during the developing the photoresist layer.
5 . The method according to claim 3 , wherein the base generated in the protective layer is generated by exposing the protective layer to the actinic radiation.
6 . The method according to claim 3 , wherein the base is diffused from the protective layer into the photoresist layer by heating the protective layer and the photoresist layer.
7 . The method according to claim 3 , wherein the protective layer is heated at temperature ranging from 50° C. to 150° C.
8 . The method according to claim 3 , wherein the protective layer and the photoresist layer are heated at temperature ranging from 50° C. to 150° C.
9 . A method, comprising:
forming a first layer comprising a photoresist composition over a substrate;
forming a second layer consisting essentially of a polymer without a nitrogen-containing moiety and without acid labile groups and a photobase generator over the first layer,
wherein the polymer is a polyfluoroalcohol, and
wherein the photobase generator is selected from the group consisting of quaternary ammonium dithiocarbamates, oxime-urethane containing molecules, dibenzophenoneoxime hexamethylene diurethan, ammonium tetraorganylborate salts, N-(2-nitrobenzyloxycarbonyl) cyclic amines, and a aminoketones, and combinations thereof;
patternwise exposing the first layer to actinic radiation to form a latent pattern in the first layer;
heating the second layer to diffuse base in the second layer into the first layer;
removing the second layer; and
developing the latent pattern to form a pattern in the first layer.
10 . The method according to claim 9 , wherein the second layer is heated at temperature ranging from 50° C. to 150° C.
11 . The method according to claim 9 , wherein portions of the first layer patternwise exposed to the actinic radiation are removed during the developing the latent pattern.
12 . The method according to claim 1 , wherein the base is diffused from the protective layer into the photoresist layer by heating the protective layer and the photoresist layer.
13 . The method according to claim 1 , wherein the protective layer is heated at temperature ranging from 50° C. to 150° C.
14 . The method according to claim 1 , wherein the protective layer and the photoresist layer are heated at temperature ranging from 50° C. to 150° C.
15 . The method according to claim 3 , wherein a concentration of the basic quencher in the protective layer ranges from 0.1 wt. % to 10 wt. % based on a weight of the polymer and the basic quencher.
16 . The method according to claim 9 , wherein a concentration of the photobase generator in the protective layer ranges from 0.1 wt. % to 10 wt. % based on a weight of the polymer and the photobase generator.
17 . The method according to claim 1 , wherein portions of the photoresist layer exposed to the actinic radiation are removed during the developing the photoresist layer.
18 . The method according to claim 1 , wherein the photobase generator is selected from the group consisting of quaternary ammonium dithiocarbamates and a aminoketones, and combinations thereof.
19 . The method according to claim 3 , wherein the photobase generator is selected from the group consisting of quaternary ammonium dithiocarbamates and a aminoketones, and combinations thereof.
20 . The method according to claim 9 , wherein the photobase generator is selected from the group consisting of quaternary ammonium dithiocarbamates and a aminoketones, and combinations thereof.