IP Library Granted Patent US 12,075,618
Granted Patent B2
US 12,075,618 · App. 17/133,395 · Granted Aug 27, 2024

Input and digital output mechanisms for analog neural memory in a deep learning artificial neural network

Inventors: Hieu Van Tran (San Jose, CA); Thuan Vu (San Jose, CA); Stephen Trinh (San Jose, CA); Stanley Hong (San Jose, CA); Toan Le (Ho Chi Minh, VN); Nghia Le (Ho Chi Minh, VN); Hien Pham (Ho Chi Minh, VN)
Assignee: SILICON STORAGE TECHNOLOGY, INC.
H10B41/42G06N3/08G11C16/0425H01L29/7883
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Quick Facts
Patent No.
US 12,075,618
App. No.
17/133,395
Granted
Aug 27, 2024
Kind
B2
Abstract

Numerous embodiments for reading or verifying a value stored in a selected memory cell in a vector-by-matrix multiplication (VMM) array in an artificial neural network are disclosed. In one embodiment, an input comprises a set of input bits that result in a series of input signals applied to a terminal of the selected memory cell, further resulting in a series of output signals that are digitized, shifted based on the bit location of the corresponding input bit in the set of input bits, and added to yield an output indicating a value stored in the selected memory cell.

Claims (47)

1. A method comprising:

providing a plurality of input bits to an input circuit sequentially to an array of non-volatile memory cells;

for each of the plurality of input bits:

generating, by the input circuit, an input signal in response to the input bit;

applying the input signal to a terminal of a selected non-volatile memory cell in the array;

receiving, by an output circuit from the array, an output generated in response to the input bit;

converting the output into a digital output; and

shifting the digital output based on the bit location of the input bit within the plurality of input bits to generate a shifted result; and

adding the shifted results for all of the plurality of input bits to yield a digital output.

2. The method of claim 1 , wherein the selected non-volatile memory cell is a split-gate flash memory cell.

3. The method of claim 2 , wherein the terminal is a control gate terminal.

4. The method of claim 1 , wherein the selected non-volatile memory cell is part of a neural memory.

5. The method of claim 1 , wherein the input signal comprises a pulse.

6. The method of claim 1 , wherein the input signal comprises an analog bias signal.

7. The method of claim 1 , wherein the input signal comprises an analog bias signal and a pulse.

8. The method of claim 7 , wherein one of the plurality of input bits is coded as the analog bias signal.

9. A method comprising:

providing a plurality of input bits to an input circuit sequentially to an array of non-volatile memory cells; and

for each of the plurality of input bits:

generating, by the input circuit, an input signal in response to the input bit, wherein the input signal comprises an analog bias level component and a pulsewidth component;

applying the input signal to a terminal of a selected non-volatile memory cell in the array;

receiving, by an output circuit, an output generated in response to the input bit; and

converting the output into a digital output.

10. The method of claim 9 , further comprising:

shifting the digital output based on the bit location of the input bit within the plurality of input bits to generate a shifted result; and

adding the shifted results for all of the plurality of input bits to yield a digital output.

11. The method of claim 9 , wherein the output is generated using a current summer.

12. The method of claim 9 , wherein the analog bias level component is a binary weighted value.

13. The method of claim 9 , wherein the output value is generated based only on the pulsewidth modulation input.

14. The method of claim 9 , wherein the selected non-volatile memory cell is part of a neural memory.

15. A method comprising:

providing a plurality of input bits to an input circuit sequentially to an array of non-volatile memory cells; and

for each of the plurality of input bits:

generating, by the input circuit, an input signal in response to the multi-bits of the input bits, wherein the input signal is an analog bias level;

applying the input signal to a terminal of a selected non-volatile memory cell in the array; and

receiving, by an output circuit, an output generated in response to the input bit.

16. The method of claim 15 , further comprising:

converting the output into a digital output.

17. The method of claim 16 , further comprising:

adding the results for all of the plurality of input bits to yield a digital output.

18. The method of claim 16 , further comprising:

shifting the digital output based on the bit location of the input bit within the plurality of input bits to generate a shifted result; and

adding the shifted results for all of the plurality of input bits to yield a digital output.

19. The method of claim 17 , wherein the output is generated using a current summer.

20. The method of claim 15 , wherein the analog bias level is binary indexed value.

21. The method of claim 15 , wherein the analog bias level is such that resulting cell output value is output value is generated based only on the pulsewidth modulation input.

22. The method of claim 15 , wherein the selected non-volatile memory cell is part of a neural memory.

Assignments (11)
RELEASE OF SECURITY INTEREST Recorded Mar 11, 2022
From: WELLS FARGO BANK, NATIONAL ASSOCIATION, AS NOTES COLLATERAL AGENT
To: MICROCHIP TECHNOLOGY INCORPORATED; SILICON STORAGE TECHNOLOGY, INC.; ATMEL CORPORATION; MICROSEMI CORPORATION; MICROSEMI STORAGE SOLUTIONS, INC.
Reel/Frame 059363/0001 →
RELEASE OF SECURITY INTEREST Recorded Mar 9, 2022
From: WELLS FARGO BANK, NATIONAL ASSOCIATION, AS NOTES COLLATERAL AGENT
To: MICROCHIP TECHNOLOGY INCORPORATED; SILICON STORAGE TECHNOLOGY, INC.; ATMEL CORPORATION; MICROSEMI CORPORATION
Reel/Frame 059358/0398 →
RELEASE OF SECURITY INTEREST Recorded Mar 9, 2022
From: WELLS FARGO BANK, NATIONAL ASSOCIATION, AS NOTES COLLATERAL AGENT
To: MICROCHIP TECHNOLOGY INCORPORATED; SILICON STORAGE TECHNOLOGY, INC.; ATMEL CORPORATION; MICROSEMI CORPORATION; MICROSEMI STORAGE SOLUTIONS, INC.
Reel/Frame 059357/0823 →
RELEASE OF SECURITY INTEREST Recorded Mar 9, 2022
From: WELLS FARGO BANK, NATIONAL ASSOCIATION, AS NOTES COLLATERAL AGENT
To: MICROCHIP TECHNOLOGY INCORPORATED; SILICON STORAGE TECHNOLOGY, INC.; ATMEL CORPORATION; MICROSEMI CORPORATION; MICROSEMI STORAGE SOLUTIONS, INC.
Reel/Frame 059358/0335 →
RELEASE OF SECURITY INTEREST Recorded Feb 28, 2022
From: JPMORGAN CHASE BANK, N.A., AS ADMINISTRATIVE AGENT
To: MICROCHIP TECHNOLOGY INCORPORATED; SILICON STORAGE TECHNOLOGY, INC.; ATMEL CORPORATION; MICROSEMI CORPORATION; MICROSEMI STORAGE SOLUTIONS, INC.
Reel/Frame 059264/0384 →
GRANT OF SECURITY INTEREST IN PATENT RIGHTS Recorded Nov 19, 2021
From: MICROCHIP TECHNOLOGY INCORPORATED; SILICON STORAGE TECHNOLOGY, INC.; ATMEL CORPORATION; MICROSEMI CORPORATION
To: WELLS FARGO BANK, NATIONAL ASSOCIATION, AS NOTES COLLATERAL AGENT
Reel/Frame 058213/0959 →
GRANT OF SECURITY INTEREST IN PATENT RIGHTS Recorded Nov 19, 2021
From: MICROCHIP TECHNOLOGY INCORPORATED; SILICON STORAGE TECHNOLOGY, INC.; ATMEL CORPORATION; MICROSEMI CORPORATION; MICROSEMI STORAGE SOLUTIONS, INC.
To: WELLS FARGO BANK, NATIONAL ASSOCIATION, AS NOTES COLLATERAL AGENT
Reel/Frame 058214/0625 →
GRANT OF SECURITY INTEREST IN PATENT RIGHTS Recorded Nov 19, 2021
From: MICROCHIP TECHNOLOGY INCORPORATED; SILICON STORAGE TECHNOLOGY, INC.; ATMEL CORPORATION; MICROSEMI CORPORATION; MICROSEMI STORAGE SOLUTIONS, INC.
To: WELLS FARGO BANK, NATIONAL ASSOCIATION, AS NOTES COLLATERAL AGENT
Reel/Frame 058214/0238 →
GRANT OF SECURITY INTEREST IN PATENT RIGHTS Recorded Nov 19, 2021
From: MICROCHIP TECHNOLOGY INCORPORATED; SILICON STORAGE TECHNOLOGY, INC.; ATMEL CORPORATION; MICROSEMI CORPORATION; MICROSEMI STORAGE SOLUTIONS, INC.
To: JPMORGAN CHASE BANK, N.A., AS ADMINISTRATIVE AGENT
Reel/Frame 058214/0380 →
SECURITY INTEREST Recorded Jun 4, 2021
From: MICROCHIP TECHNOLOGY INCORPORATED; SILICON STORAGE TECHNOLOGY, INC.; ATMEL CORPORATION; MICROSEMI CORPORATION; MICROSEMI STORAGE SOLUTIONS, INC.
To: WELLS FARGO BANK, NATIONAL ASSOCIATION, AS NOTES COLLATERAL AGENT
Reel/Frame 057935/0474 →
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Dec 23, 2020
From: TRAN, HIEU VAN; VU, THUAN; TRINH, STEPHEN; HONG, STANLEY; LE, TOAN; LE, NGHIA; PHAM, HIEN
To: SILICON STORAGE TECHNOLOGY, INC.
Reel/Frame 054744/0559 →