Imaging device and electronic device
An imaging device having a three-dimensional integration structure is provided. A first structure including a transistor including silicon in an active layer or an active region and a second structure including an oxide semiconductor in an active layer are fabricated. After that, the first and second structures are bonded to each other so that metal layers included in the first and second structures are bonded to each other; thus, an imaging device having a three-dimensional integration structure is formed.
1. An imaging device comprising:
a first metal part and a second metal part in contact with each other, the second metal part provided below the first metal part;
a plurality of first transistors provided over the first metal part;
a photoelectric conversion element provided over the plurality of first transistors; and
a second transistor provided below the second metal part,
wherein the photoelectric conversion element is formed in a semiconductor substrate,
wherein a p-type region of the photoelectric conversion element is electrically connected to a conductive layer below the semiconductor substrate,
wherein a light-blocking layer provided over the semiconductor substrate overlaps a region where the p-type region is in electrical contact with the conductive layer,
wherein one of the plurality of first transistors shares a source or drain region of another of the plurality of first transistors,
wherein the source or drain region overlaps a joint region between the first metal part and the second metal part,
wherein the source or drain region serves as a floating diffusion (FD) node,
wherein a gate of at least one of the plurality of first transistors is electrically connected to a first wiring,
wherein an anode of the photoelectric conversion element is provided to face a light-receiving surface, and includes a depressed area, and
wherein the anode of the photoelectric conversion element is electrically connected to a second wiring provided on a same layer as the first wiring through the depressed area.
2. The imaging device according to claim 1 , wherein current characteristics of the second transistor is different from current characteristics of the plurality of first transistors.
3. The imaging device according to claim 1 , wherein the first metal part is a same metal element as the second metal part.
4. The imaging device according to claim 1 , wherein an off-state current per channel width of the plurality of first transistors is lower than an off-state current per channel width of the second transistor.
5. An imaging device comprising:
a first metal part and a second metal part in contact with each other, the second metal part provided below the first metal part;
a plurality of first transistors provided over the first metal part;
a photoelectric conversion element provided over the first metal part; and
a second transistor provided below the second metal part,
wherein the photoelectric conversion element is formed in a semiconductor substrate,
wherein a p-type region of the photoelectric conversion element is electrically connected to a conductive layer below the semiconductor substrate,
wherein a light-blocking layer provided over the semiconductor substrate overlaps a region where the p-type region is in electrical contact with the conductive layer,
wherein one of the plurality of first transistors shares a source or drain region of another of the plurality of first transistors,
wherein the source or drain region overlaps a joint region between the first metal part and the second metal part,
wherein the source or drain region serves as a floating diffusion (FD) node,
wherein a gate of at least one of the plurality of first transistors is electrically connected to a first wiring,
wherein an anode of the photoelectric conversion element is provided to face a light-receiving surface, and includes a depressed area, and
wherein the anode of the photoelectric conversion element is electrically connected to a second wiring provided on a same layer as the first wiring through the depressed area.
6. The imaging device according to claim 5 , wherein current characteristics of the second transistor is different from current characteristics of the plurality of first transistors.
7. The imaging device according to claim 5 , wherein the first metal part is a same metal element as the second metal part.
8. The imaging device according to claim 5 , wherein an off-state current per channel width of the plurality of first transistors is lower than an off-state current per channel width of the second transistor.