Inverse etch model for mask synthesis
A first set of critical dimension (CD) measurements of resist patterns created by a lithography process and a second set of CD measurements of water patterns created by an etch process may be obtained. A forward etch model and an inverse etch model may be calibrated together by reducing (1) a first prediction error between the second set of CD measurements and a first set of simulated CDs predicted by the forward etch model based on the resist patterns, a second prediction error between the first set of CD measurements and a second set of simulated CDs predicted by the inverse etch model based on the wafer patterns, and a matching error between the forward etch model and the inverse etch model.
1. A method, comprising:
obtaining a first set of critical dimension (CD) measurements of resist patterns created by a lithography process;
obtaining a second set of CD measurements of wafer patterns created by an etch process, wherein the etch process creates the wafer patterns by removing material in areas of a wafer which are not covered by the resist patterns; and
calibrating, by a processor, a forward etch model and an inverse etch model together by reducing (1) a first prediction error between the second set of CD measurements and a first set of simulated CDs predicted by the forward etch model based on the resist patterns, (2) a second prediction error between the first set of CD measurements and a second set of simulated CDs predicted by the inverse etch model based on the wafer patterns, and (3) a matching error between the forward etch model and the inverse etch model, wherein the matching error comprises a first term based on (w−F etch (G etch (w)), where w represents the second set of CD measurements of wafer patterns, F etch represents the foward etch model, and G etch represents the inverse etch model.
2. The method of claim 1 , wherein the first prediction error comprises a term based on (w−F etch (r)), where r represents the first set of CD measurements of resist patterns.
3. The method of claim 1 , wherein the second prediction error comprises a term based on (r−G etch (w)), where r represents the first set of CD measurements of resist patterns.
4. The method of claim 1 , wherein the matching error between the forward etch model and the inverse etch model comprises a second term based on (r−G etch (F etch (r)), where r represents the first set of CD measurements of resist patterns.
5. The method of claim 1 , further comprising:
determining a resist target by applying the inverse etch model to a design intent; and
determining a mask layout by performing lithography correction on the resist target.
6. The method of claim 5 , further comprising:
determining simulated resist patterns based on the mask layout using a lithography model; and
determining simulated wafer patterns based on the simulated resist patterns using the forward etch model.
7. The method of claim 6 , further comprising verifying the mask layout by comparing the design intent with the simulated wafer patterns.
8. The method of claim 6 , wherein a level set method is used to determine the resist target by applying the inverse etch model to the design intent and determine the simulated wafer patterns based on the simulated resist patterns using the forward etch model.
9. A system, comprising:
a memory storing instructions; and
a processor, coupled with the memory and to execute the instructions, the instructions when executed cause the processor to:
obtain a first set of critical dimension (CD) measurements of resist patterns created by a lithography process;
obtain a second set of CD measurements of wafer patterns created by an etch process, wherein the etch process creates the wafer patterns by removing material in areas of a wafer which are not covered by the resist patterns; and
calibrate a forward etch model and an inverse etch model together by reducing a cost term that comprises a first term based on a difference between (1) the second set of CD measurements of wafer patterns and (2) simulated CD measurements obtained by applying the inverse etch model followed by the forward etch model to the wafer patterns, wherein the cost term comprises a second term based on (r−G etch (F etch (r)), where r represents the first set of CD measurements of resist patterns.
10. The system of claim 9 , wherein the cost term comprises a third term based on (w−F etch (r)).
11. The system of claim 10 , wherein the cost term comprises a fourth term based on (r−G etch (w)).
12. The system of claim 9 , wherein the instructions when executed cause the processor to:
determine a resist target by applying the inverse etch model to a design intent; and
determine a mask layout by performing lithography correction on the resist target.
13. The system of claim 12 , wherein the instructions when executed cause the processor to:
determine simulated resist patterns based on the mask layout using a lithography model; and
determine simulated wafer patterns based on the simulated resist patterns using the forward etch model.
14. The system of claim 13 , wherein the instructions when executed cause the processor to verify the mask layout by comparing the design intent with the simulated wafer patterns.
15. A non-transitory computer-readable medium comprising stored instructions, which when executed by a processor, cause the processor to:
obtain a first set of critical dimension (CD) measurements of resist patterns created by a lithography process;
obtain a second set of CD measurements of wafer patterns created by an etch process, wherein the etch process creates the wafer patterns by removing material in areas of a wafer which are not covered by the resist patterns; and
calibrate a forward etch model and an inverse etch model together by reducing (1) a first prediction error between the second set of CD measurements and a first set of simulated CDs predicted by the forward etch model based on the resist patterns, (2) a second prediction error between the first set of CD measurements and a second set of simulated CDs predicted by the inverse etch model based on the wafer patterns, and (3) a matching error between the forward etch model and the inverse etch model, wherein the matching error comprises a term bases on (r−G etch (F etch (r)), where r represents the first set of CD measurements of resist patterns, F etch represents the foward etch model, and G etch represents the inverse etch model.
16. The non-transitory computer-readable medium of claim 15 , wherein the first prediction error comprises a term based on (w−F etch (r)), where w represents the second set of CD measurements of wafer patterns.
17. The non-transitory computer-readable medium of claim 15 , wherein the second prediction error comprises a term based on (r−G etch (w)), where w represents the second set of CD measurements of wafer patterns.
18. The non-transitory computer-readable medium of claim 15 , wherein the cost term comprises a term based on (w−F etch (r)), where w represents the second set of CD measurements of wafer patterns.
19. The non-transitory computer-readable medium of claim 15 , wherein the cost term comprises a term based on (r−G etch (w)), where w represents the second set of CD measurements of wafer patterns.
20. The non-transitory computer-readable medium of claim 15 , wherein the instructions, which when executed by the processor, cause the processor to:
determine a resist target by applying the inverse etch model to a design intent;
determine a mask layout by performing lithography correction on the resist target;
determine simulated resist patterns based on the mask layout using a lithography model;
determine simulated wafer patterns based on the simulated resist patterns using the forward etch model; and
verify the mask layout by comparing the design intent with the simulated wafer patterns.