IP Library Granted Patent US 11,591,495
Granted Patent B2
US 11,591,495 · App. 17/170,026 · Granted Feb 28, 2023

Neutral to alkaline chemical mechanical polishing compositions and methods for tungsten

Inventors: Yi Guo (Newark, DE); Tony Quan Tran (Bear, DE)
Assignee: Rohm and Haas Electronic Materials CMP Holdings, Inc.
C09G1/02B24B37/044C23F1/00H01L21/3212C23F1/44
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Quick Facts
Patent No.
US 11,591,495
App. No.
17/170,026
Granted
Feb 28, 2023
Kind
B2
Abstract

A neutral to alkaline chemical mechanical composition for polishing tungsten includes, as initial components: water; an oxidizing agent selected from an iodate compound, a periodate compound and mixtures thereof; colloidal silica abrasive particles including a nitrogen-containing compound; optionally, a pH adjusting agent; and, optionally, a biocide. The chemical mechanical polishing method includes providing a chemical mechanical polishing pad, having a polishing surface; creating dynamic contact at an interface between the polishing pad and the substrate; and dispensing the neutral to alkaline chemical mechanical polishing composition onto the polishing surface at or near the interface between the polishing pad and the substrate; wherein some of the tungsten is polished away from the substrate and, further, to at least inhibit static etch of the tungsten.

Claims (11)

1. A chemical mechanical polishing composition for tungsten consisting of, as initial components: water; an oxidizing agent selected from the group consisting of potassium iodate, sodium iodate, potassium periodate, sodium periodate and mixtures thereof, wherein the oxidizing agent is in amounts of 0.001 wt % to 1 wt %;

colloidal silica abrasive particles comprising a nitrogen-containing compound selected from the group consisting of aminosilane, a nitrogen-containing compound having an amino group, tetramethylammonium, tetraethylammonium, tetrapropylammonium, tetrabutylammonium, tetrapentylammonium, ethyltrimethylammonium, diethylmethylammonium and mixtures thereof, and a net negative zeta potential;

a pH adjusting agent; and,

a biocide; and wherein a pH of the chemical mechanical polishing composition is equal to or greater than 7.

2. The chemical mechanical polishing composition of claim 1 , wherein the oxidizing agent is selected from the group consisting of potassium iodate, potassium periodate and mixtures thereof.

3. The chemical mechanical polishing composition of claim 1 , wherein the nitrogen-containing compound is an aminosilane, wherein a molar ratio of the aminosilane to the colloidal silica abrasive particles is greater than 0.1% to less than 10%.

4. The chemical mechanical polishing compositions of claim 1 , wherein the oxidizing agent is in amounts of 0.1 wt % to 1 wt %.

5. The chemical mechanical polishing composition of claim 4 , wherein the oxidizing agent is in amounts of 0.3 wt % to 0.5 wt %.

6. The chemical mechanical polishing composition of claim 1 , wherein the pH is 7-13.

7. The chemical mechanical polishing composition of claim 6 , wherein the pH is 8-12.

8. The chemical mechanical polishing composition of claim 7 , wherein the pH is 8-10.

Assignments (3)
SECURITY INTEREST Recorded Nov 3, 2025
From: QNITY ELECTRONICS, INC.
To: JPMORGAN CHASE BANK, N.A., AS COLLATERAL AGENT
Reel/Frame 073515/0243 →
SECURITY INTEREST Recorded Nov 3, 2025
From: QNITY ELECTRONICS, INC.
To: U.S. BANK TRUST COMPANY, NATIONAL ASSOCIATION, AS NOTES COLLATERAL AGENT
Reel/Frame 073517/0298 →
CHANGE OF NAME Recorded Oct 29, 2024
From: ROHM & HAAS ELECTRONIC MATERIALS CMP HOLDINGS INC.
To: DUPONT ELECTRONIC MATERIALS HOLDING, INC.
Reel/Frame 069274/0160 →
Continuity (2)
Division 16026175 · Jul 3, 2018
Related Publication 20210163787A1 · Jun 3, 2021