System and method for warpage detection in a CMOS bonded array
A system and method for warpage detection in a CMOS bonded array includes a conductor positioned between bonded contact pads of first and second wafers. The conductor is connected to a continuity check circuit. If the continuity check circuit detects an interruption in conductivity of the conductor, such interruption is indicative of warpage in the first and/or second wafers. In one implementation, the conductor is a serpentine-shaped structure.
1. An integrated circuit comprising:
a first wafer comprising a first plurality of contact pads;
a second wafer comprising a second plurality of contact pads, wherein at least some of the first plurality of contact pads are bonded to at least some of the second plurality of contact pads forming a plurality of pillars;
a conductor positioned in the first and second wafers and parallel to and offset from at least some of the plurality of pillars; and
a continuity check circuit electrically coupled with the conductor and configured to detect warpage in the first and/or second wafers by detecting an interruption in conductivity of the conductor.
2. The integrated circuit of claim 1 , wherein the first wafer comprises a memory array and the second wafer comprises peripheral circuitry for the memory array.
3. The integrated circuit of claim 2 , wherein the second wafer comprises a complementary metal-oxide-semiconductor (CMOS) wafer.
4. The integrated circuit of claim 1 , wherein the continuity check circuit is in the second wafer.
5. The integrated circuit of claim 1 , wherein the conductor runs through the first and second wafers and between at least some of the plurality of pillars in a serpentine shape.
6. The integrated circuit of claim 1 , wherein the conductor runs across at least one of a plurality of zones in the first and second wafers.
7. The integrated circuit of claim 6 , wherein the integrated circuit comprises at least one additional conductor electrically coupled with the continuity check circuit and running across at least one other zone of the plurality of zones.
8. The integrated circuit of claim 6 , wherein the plurality of zones comprise one or more of the following: a high-voltage zone, a wordline zone, a bitline zone, and a decode address zone.
9. The integrated circuit of claim 1 , wherein the conductor comprises a first portion formed in the first wafer and a second portion formed in the second wafer.
10. The integrated circuit of claim 9 , wherein the first and second portions comprise respective horizontal and vertical components, and wherein at least some of the vertical components are bonded together.
11. The integrated circuit of claim 10 , wherein the horizontal components comprise metal-filled trenches, and wherein the vertical components comprise metal-filled vertical interconnect access structures (vias).
12. An integrated circuit comprising:
a first wafer comprising a first plurality of electrical contacts;
a second wafer comprising a second plurality of electrical contacts, wherein at least some of the first plurality of electrical contacts are bonded to at least some of the second plurality of electrical contacts forming a plurality of pillars; and
means for detecting warpage in at least one of the first and second wafers, wherein the means for detecting warpage comprises a conductor that is parallel to and offset from at least some of the plurality of pillars.
13. The integrated circuit of claim 12 , wherein the means for detecting warpage further comprises a continuity check circuit.
14. The integrated circuit of claim 12 , wherein the conductor is serpentine shaped.
15. The integrated circuit of claim 12 , wherein the conductor comprises a first portion formed in the first wafer and a second portion formed in the second wafer.
16. The integrated circuit of claim 15 , wherein the first and second portions comprise respective horizontal and vertical components, wherein the horizontal components comprise metal-filled trenches, and wherein the vertical components comprise metal-filled vertical interconnect access structures (vias).
17. The integrated circuit of claim 12 , wherein the first wafer comprises a NAND memory wafer and the second wafer comprises a complementary metal-oxide-semiconductor (CMOS) wafer.
18. A method for detecting warpage comprising:
providing an integrated circuit comprising:
a first wafer comprising a first plurality of contact pads;
a second wafer comprising a second plurality of contact pads, wherein at least some of the first plurality of contact pads are bonded to at least some of the second plurality of contact pads forming a plurality of pillars;
a conductor positioned in the first and second wafers and parallel to and offset from at least some of the plurality of pillars; and
a continuity check circuit electrically coupled with the conductor;
applying current through the conductor; and
using the continuity check circuit electrically to detect warpage in the first and/or second wafers by detecting an interruption in conductivity of the conductor.
19. The method of claim 18 , wherein the first wafer comprises a memory array and the second wafer comprises a complementary metal-oxide-semiconductor (CMOS) wafer comprising peripheral circuitry for the memory array.
20. The method of claim 18 , wherein the conductor runs across at least one of a plurality of zones in the first and second wafers.