IP Library Granted Patent US 12,044,075
Granted Patent B2
US 12,044,075 · App. 17/183,478 · Granted Jul 23, 2024

Polycrystalline diamond compact

Inventors: Kenneth E. Bertagnolli (Riverton, UT); David P. Miess (Highland, UT); Jiang Qian (Cedar Hills, UT); Jason K. Wiggins (Draper, UT); Michael A. Vail (Genola, UT); Debkumar Mukhopadhyay (Sandy, UT)
Assignee: US SYNTHETIC CORPORATION
E21B10/567B22F7/08C22C26/00E21B10/36E21B10/46E21B10/55E21B10/5735B22F2998/00B24D18/00F16C17/02F16C17/04F16C17/102F16C33/043F16C33/26F16C2352/00Y10T428/24612Y10T428/24996Y10T428/249967
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Quick Facts
Patent No.
US 12,044,075
App. No.
17/183,478
Granted
Jul 23, 2024
Kind
B2
Abstract

In an embodiment, a method of fabricating a polycrystalline diamond compact is disclosed. The method includes sintering a plurality of diamond particles in the presence of a metal-solvent catalyst to form a polycrystalline diamond body; leaching the polycrystalline diamond body to at least partially remove the metal-solvent catalyst therefrom, thereby forming an at least partially leached polycrystalline diamond body; and subjecting an assembly of the at least partially leached polycrystalline diamond body and a cemented carbide substrate to a high-pressure/high-temperature process at a pressure to infiltrate the at least partially leached polycrystalline diamond body with an infiltrant. The pressure of the high-pressure/high-temperature process is less than that employed in the act of sintering of the plurality of diamond particles.

Claims (48)

1. A polycrystalline diamond compact, comprising:

a polycrystalline diamond table, at least an unleached portion of the polycrystalline diamond table including:

a plurality of diamond grains bonded together via diamond-to-diamond bonding to define a plurality of interstitial regions;

a catalyst occupying at least a portion of the plurality of interstitial regions;

a specific magnetic saturation of 10 G·cm 3 /g to 15 G·cm 3 /g; and

a specific permeability of less than 0.10 G·cm 3 /g·Oe.

2. The polycrystalline diamond compact of claim 1 wherein the polycrystalline diamond table exhibits one or more characteristics of being sintered at a cell pressure of at least 7.5 GPa.

3. The polycrystalline diamond compact of claim 1 wherein the plurality of diamond grains exhibit an average grain size of 10 μm to 50 μm.

4. The polycrystalline diamond compact of claim 1 wherein the plurality of diamond grains exhibit an average grain size of 10 μm to 30 μm.

5. The polycrystalline diamond compact of claim 1 wherein at least the unleached portion of the polycrystalline diamond table includes a catalyst content of the catalyst of 3 weight % to 7.5 weight %.

6. The polycrystalline diamond compact of claim 1 wherein the specific permeability of the unleached portion of the polycrystalline diamond table is 0.06 G·cm 3 /g·Oe to 0.09 G·cm 3 /g·Oe.

7. The polycrystalline diamond compact of claim 1 wherein at least the unleached portion of the polycrystalline diamond table includes a coercivity of 115 Oe to 250 Oe.

8. The polycrystalline diamond compact of claim 1 wherein at least the unleached portion of the polycrystalline diamond table includes a coercivity of 155 Oe to 175 Oe.

9. The polycrystalline diamond compact of claim 1 wherein the polycrystalline diamond table is formed from only single layer of polycrystalline diamond extending from an upper working surface of the polycrystalline diamond table to the substrate.

10. The polycrystalline diamond compact of claim 1 wherein the polycrystalline diamond table includes:

a first layer including coarse-sized diamond grains exhibiting a first average grain size; and

a second layer including fine-sized diamond grains.

11. The polycrystalline diamond compact of claim 1 wherein the unleached portion of the polycrystalline diamond table exhibits a thermal stability thereof as determined by a distance cut prior to failure in a vertical lathe thermal stability test, of at least 1300 m.

12. The polycrystalline diamond compact of claim 1 wherein a G ratio of the unleached portion of the polycrystalline diamond table is at least 4.0×106.

13. The polycrystalline diamond compact of claim 1 wherein a lateral dimension of the polycrystalline diamond table is 0.8 cm or more.

14. The polycrystalline diamond compact of claim 1 wherein the diamond table includes a leached region.

15. The polycrystalline diamond compact of claim 1 wherein the polycrystalline diamond table comprises a working surface exhibiting a residual principal stress of −345 MPa to 0 MPa.

16. A rotary drill bit, comprising:

a bit body including a leading end structure configured to facilitate drilling a subterranean formation; and

a plurality of cutting elements mounted to the bit body, at least one of the plurality of cutting elements including the polycrystalline diamond compact according to claim 1 .

17. A polycrystalline diamond compact, comprising:

a substrate;

a polycrystalline diamond table bonded to the substrate, at least an unleached portion of the polycrystalline diamond table including:

a plurality of diamond grains bonded together via diamond-to-diamond bonding to define a plurality of interstitial regions, the plurality of diamond grains exhibiting an average grain size of 50 μm or less;

a catalyst occupying at least a portion of the plurality of interstitial regions, wherein at least the unleached portion of the polycrystalline diamond table includes a catalyst content of the catalyst of 1 weight % to 7.5 weight %;

a specific magnetic saturation of 5 G·cm 3 /g to 15 G·cm 3 /g; and

a specific permeability of less than 0.10 G·cm 3 /g·Oe.

18. A rotary drill bit, comprising:

a bit body including a leading end structure configured to facilitate drilling a subterranean formation; and

a plurality of cutting elements mounted to the bit body, at least one of the plurality of cutting elements including the polycrystalline diamond compact according to claim 17 .

19. A polycrystalline diamond compact, comprising:

a substrate;

a polycrystalline diamond table bonded to the substrate, at least an unleached portion of the polycrystalline diamond table including:

a plurality of diamond grains bonded together via diamond-to-diamond bonding to define a plurality of interstitial regions;

a catalyst occupying at least a portion of the plurality of interstitial regions, wherein at least the unleached portion of the polycrystalline diamond table includes a catalyst content of the catalyst of 3 weight % to 7.5 weight %;

a coercivity greater than 115 Oe to 250 Oe;

a specific magnetic saturation of 10 G·cm 3 /g to 15 G·cm 3 /g;

a specific permeability of 0.06 G·cm 3 /g·Oe to 0.09 G·cm 3 /g·Oe;

a G ratio of at least 4.0×10 6 ;

a thermal stability, as determined by a distance cut, prior to failure, in a vertical lathe test of 1300 μm to 3950 μm.

20. A rotary drill bit, comprising:

a bit body including a leading end structure configured to facilitate drilling a subterranean formation; and

a plurality of cutting elements mounted to the bit body, at least one of the plurality of cutting elements including the polycrystalline diamond compact according to claim 19 .

Assignments (3)
SECURITY INTEREST Recorded Jul 18, 2025
From: US SYNTHETIC CORPORATION
To: KEYBANK NATIONAL ASSOCIATION
Reel/Frame 074973/0089 →
RELEASE OF SECURITY INTEREST IN PATENTS Recorded Jul 17, 2025
From: JPMORGAN CHASE BANK, N.A.
To: CHAMPIONX LLC; APERGY ESP SYSTEMS, LLC; APERGY BMCS ACQUISITION CORP; HARBISON-FISCHER, INC.; NORRIS RODS, INC.,; NORRIS RODS, INC.,; NORRISEAL-WELLMARK, INC.; PCS FERGUSON, INC.; QUARTZDYNE, INC.; US SYNTHETIC CORPORATION
Reel/Frame 072004/0019 →
SECURITY INTEREST Recorded Apr 30, 2021
From: APERGY ESP SYSTEMS, LLC; APERGY BMCS ACQUISITION CORPORATION; CHAMPIONX USA INC.; HARBISON-FISCHER, INC.; NORRIS RODS, INC.; NORRISEAL-WELLMARK, INC.; PCS FERGUSON, INC.; QUARTZDYNE, INC.; US SYNTHETIC CORPORATION; WINDROCK, INC.
To: JPMORGAN CHASE BANK, N.A.
Reel/Frame 056106/0007 →
Continuity (7)
Continuation 16667597 · Oct 29, 2019
Continuation 16358281 · Mar 19, 2019
Continuation 13789099 · Mar 7, 2013
Continuation 13623764 · Sep 20, 2012
Continuation 12690998 · Jan 21, 2010
Continuation In Part 12244960 · Oct 3, 2008
Related Publication 20210262295A1 · Aug 26, 2021