Relinking scheme in sub-block mode
Aspects of a storage device including a memory and a controller are provided which allow sub-blocks with different sub-block addresses to be linked across multiple planes to form metablocks. The memory includes multiple blocks in different planes, where each of the blocks includes multiple sub-blocks. The controller links a first sub-block in a first plane and a second sub-block in a second plane with different sub-block addresses to form the metablock. After forming the metablock, the controller programs different word lines in the first and second sub-blocks when writing data to the metablock. Thus, the controller may write data to linked or relinked metablocks with different sub-block addresses, thereby improving die yield and memory capacity of the storage device.
1. A storage device, comprising:
a memory including a plurality of blocks in different planes, wherein each of the blocks includes a plurality of sub-blocks; and
a controller configured to link a first one of the sub-blocks in a first one of the planes with a second one of the sub-blocks in a second one of the planes to form a metablock, wherein the first one of the sub-blocks and the second one of the sub-blocks are associated with different sub-block addresses;
wherein the metablock is a logical grouping of the first one of the sub-blocks and the second one of the sub-blocks;
wherein the controller is further configured, during a write operation associated with the metablock, to program a first word line in the first one of the sub-blocks and to subsequently program a second word line in the second one of the sub-blocks following a program failure responsive to programming of the first word line.
2. The storage device of claim 1 , wherein the controller is configured to form the metablock in response to identifying an error in a third one of the sub-blocks in the first one of the planes and in a fourth one of the sub-blocks in the second one of the planes.
3. The storage device of claim 1 , wherein the controller is configured to form the metablock in response to identifying an error in other metablocks respectively including the first one of the sub-blocks and the second one of the sub-blocks.
4. The storage device of claim 1 , wherein the first one of the planes is in a first die and the second one of the planes is in a second die.
5. The storage device of claim 1 , wherein the memory further includes additional blocks in additional planes, each of the additional blocks having a plurality of additional sub-blocks, and the metablock further includes two or more of the additional sub-blocks.
6. The storage device of claim 1 , wherein the metablock excludes the sub-blocks that are part of error-free blocks.
7. A storage device, comprising:
a memory including a plurality of blocks in different planes, wherein each of the blocks includes a plurality of sub-blocks; and
a controller configured to program a word line in a first one of the sub-blocks in one of the planes and to program a different word line in a second one of the sub-blocks in another one of the planes following a program failure responsive to programming of the word line, wherein the first one of the sub-blocks and the second one of the sub-blocks are parts of a metablock and include different sub-block addresses;
wherein the metablock is a logical group including the first one of the sub-blocks and the second one of the sub-blocks.
8. The storage device of claim 7 , wherein the controller is further configured to form the metablock in response to identifying an error in a third one of the sub-blocks in the one of the planes and a fourth one of the sub-blocks in the another one of the planes.
9. The storage device of claim 7 , wherein the controller is configured to form the metablock in response to identifying an error in a first metablock including the first one of the sub-blocks and in a second metablock including the second one of the sub-blocks.
10. The storage device of claim 7 , wherein the one of the planes and the another one of the planes are in different dies.
11. The storage device of claim 10 , wherein the memory further includes additional blocks in additional planes of the different dies, each of the additional blocks having a plurality of additional sub-blocks, and the metablock further includes two or more of the additional sub-blocks.
12. The storage device of claim 7 , wherein the controller is further configured to program the different word line in the second one of the sub-blocks following the program failure in a third one of the sub-blocks.
13. The storage device of claim 7 , wherein the metablock excludes the sub-blocks within error-free blocks.
14. A storage device, comprising:
a memory including a plurality of blocks in different planes, wherein each of the blocks includes a plurality of sub-blocks; and
a controller configured to link a first one of the sub-blocks in one of the planes with a second one of the sub-blocks in another one of the planes to form a metablock, wherein the first one of the sub-blocks and the second one of the sub-blocks are associated with different sub-block addresses;
wherein the controller is further configured to program different word lines in the first one of the sub-blocks and the second one of the sub-blocks during a write operation associated with the metablock;
wherein the metablock includes a logical address associated with the first one of the sub-blocks and the second one of the sub-blocks;
wherein the different word lines include a first word line in the first one of the sub-blocks and a second word line in the second one of the sub-blocks, the controller being further configured to program the second word line following a program failure associated with the first word line.
15. The storage device of claim 14 , wherein the first one of the sub-blocks is in a first die and the second one of the sub-blocks is in a second die.
16. The storage device of claim 15 , wherein the controller is configured to form the metablock in response to identifying an error in a third one of the sub-blocks in the first die and in a fourth one of the sub-blocks in the second die.
17. The storage device of claim 15 , wherein the memory further includes additional blocks in additional planes of the first die and the second die, each of the additional blocks having a plurality of additional sub-blocks, and the metablock further includes two or more of the additional sub-blocks.
18. The storage device of claim 17 , wherein the metablock excludes the additional sub-blocks that are part of error-free blocks.
19. The storage device of claim 14 , wherein the program failure is in a third one of the sub-blocks.