Detection of page discrepancy during read threshold calibration
Data storage devices, such as solid state drives (SSDs), are disclosed. A read threshold calibration operation is utilized to generate a calibrated read threshold for one or more voltage states of a cell of a MLC memory. A single-level cell (SLC) read is then executed to sense the ratio of bit values at the read thresholds of the voltage states, where SLC read refers to reading at a single read threshold, rather than to the cell type. The sensing results in a binary page with certain statistics of 1's and 0's. The ratio of 1's (or 0's) in the binary page is used to determine a deviation from the expected ratio, where the deviation is used to adjust the calibrated read threshold to match the voltage states of the MLC memory.
1. A data storage device, comprising:
a non-volatile storage unit, wherein a capacity of the non-volatile storage unit is divided into a plurality of cells, and wherein each of the plurality of cells comprises one or more pages; and
a controller coupled to the non-volatile storage unit, wherein the controller is configured to:
generate a calibrated read threshold for one or more voltage states of a cell of multi-level cell (MLC) for the one or more pages;
sense a statistic of the one or more pages at an expected read threshold, wherein the sensing is a single-level cell (SLC) read at the expected read threshold;
compare the sensed statistic of the one or more pages to an expected statistic of the one or more pages; and
adjust, based on a deviation from the expected statistic, the calibrated read threshold.
2. The data storage device of claim 1 , wherein each of the one or more pages is an upper page, a middle page, or a lower page.
3. The data storage device of claim 1 , wherein sensing the statistic of the one or more pages comprises sensing a first number of first bit values or a second number of second bit values.
4. The data storage device of claim 3 , wherein the first bit value corresponds to a logical “1” value and the second bit value corresponds to a logical “0” value.
5. The data storage device of claim 4 , wherein the controller is further configured to perform a read threshold calibration operation to provide the expected statistic of the one or more pages, wherein the expected statistic is a ratio of the first number of the first bits to a total number of bits, and wherein the total number of bits comprises the first number of first bits and the second number of second bits.
6. The data storage device of claim 1 , wherein the expected statistic is a result of a read threshold calibration operation, and wherein the read threshold calibration operation comprises reading one or more expected read thresholds of the one or more voltage states.
7. The data storage device of claim 1 , wherein the adjusting is a read voltage distribution shift in a positive voltage direction or a negative voltage direction to match the sensed statistic.
8. A data storage device, comprising:
a non-volatile storage unit, wherein a capacity of the non-volatile storage unit is divided into a plurality of cells, and wherein each of the plurality of cells comprises one or more pages; and
a controller coupled to the non-volatile storage unit, wherein the controller is configured to:
initiate a read threshold calibration operation for the one or more pages of a cell of multi-level cell (MLC);
analyze results of the read threshold calibration operation to determine one or more calibrated read thresholds;
sense a ratio of bit values of at least one or more single read thresholds for a single-level cell (SLC);
calculate a statistic, based on the sensing, of the one or more pages, wherein a sensed statistic is a fraction of a first number of first bit values or a fraction of a second number of second bit values;
determine if the sensed statistic is within an acceptable range from an expected statistic;
generate an alert if the sensed statistic is outside the acceptable range from the expected statistic; and
adjust, based on a deviation from the expected statistic, the one or more calibrated read thresholds.
9. The data storage device of claim 8 , wherein the statistic is a ratio of a first number of first bit values to a total number of bits, and wherein the total number of bits comprises the first number of first bit values and a second number of second bit values.
10. The data storage device of claim 9 , wherein the first number of bit values is a number of logical “1's” and the second number of bit values is a number of logical “0's”.
11. The data storage device of claim 8 , wherein the controller, when the alert is generated, is further configured to perform at least one of the following:
repeat the read threshold calibration operation utilizing modified sensing parameters, the modified sensing parameters comprising at least one of relaxing a timing of the read threshold calibration operation and performing a single plane read;
adjust one or more scanning combs of the read threshold operation; and
relocate recoverable data from the one or more pages.
12. The data storage device of claim 8 , wherein the acceptable range is a number of standard deviations, and wherein the number of standard deviations is between about 5 and about 10.
13. The data storage device of claim 8 , wherein the deviation from the expected statistic is a read voltage distribution shift in a positive voltage direction or in a negative voltage direction to match the sensed statistic.