NVMe persistent memory region quick copy
The present disclosure generally relates to data storage devices, such as solid state drives (SSDs), and efficient data storage device operations related to power loss incidents. A controller of the data storage device is configured to periodically pre-encode data that is stored in random access memory (RAM), detect a power loss event, and program the data and parity data to non-volatile memory (NVM) in response to detecting the power loss event. Upon reaching a threshold size, the data in RAM may be pre-encoded and the pre-encoded data can be programmed to the RAM or the NVM. The parity data may be stored in one or more locations of the NVM. Upon detecting a power loss event, any data remaining in RAM that is not pre-encoded is encoded. The data and any parity data not yet programmed to the NVM are programmed to the NVM.
1. A data storage device, comprising:
a non-volatile memory; and
a controller coupled to the non-volatile memory, wherein the controller is configured to:
determine whether changes in random access memory (RAM) exceeds a first threshold, wherein the first threshold corresponds to a time since last pre-encoding data;
pre-encode data stored in the RAM to create parity data prior to a power loss incident, wherein the pre-encoding occurs in response to the determining;
determine that the parity data stored in the RAM is greater than a second threshold, wherein the data and the parity data is not yet programmed to the non-volatile memory, wherein the first threshold and the second threshold are distinct;
program the data associated with the parity data and the parity data stored in the RAM to the non-volatile memory when the parity data stored in the RAM is greater than the second threshold value;
detect the power loss incident; and
program only data, not yet programmed to the non-volatile memory, and only parity data, not yet programmed to the non-volatile memory, to the non-volatile memory in response to detecting the power loss incident.
2. The data storage device of claim 1 , wherein the parity data is stored in a different location in the RAM from the data.
3. The data storage device of claim 1 , wherein the programming comprises writing the data and the parity data to different locations of the non-volatile memory.
4. The data storage device of claim 1 , wherein the programming comprises jointly writing the parity data and the data to the non-volatile memory.
5. The data storage device of claim 1 , wherein the pre-encoding occurs periodically.
6. The data storage device of claim 1 , wherein the controller is further configured to monitor changes in the data in the RAM.
7. The data storage device of claim 1 , wherein the controller is further configured to check the data prior to programming the data and the parity data to the non-volatile memory.
8. The data storage device of claim 1 , wherein the pre-encoding occurs to a first section of the data prior to a second section of the data stored in the RAM.
9. The data storage device of claim 1 , wherein the programming the parity data and the data to the non-volatile memory comprises programming to single level cell (SLC) memory.
10. The data storage device of claim 1 , wherein the parity data is less than the data.
11. A data storage device, comprising:
a non-volatile memory; and
a controller coupled to the non-volatile memory, wherein the controller is configured to:
determine whether changes in random access memory (RAM) exceeds a first threshold, wherein the first threshold corresponds to a time since last pre-encoding data;
pre-encode data stored in the RAM to create parity data prior to a power loss incident, wherein the pre-encoding occurs in response to the determining;
determine that the parity data stored in the RAM is greater than a second threshold, wherein the data and the parity data is not yet programmed to the non-volatile memory, wherein the first threshold and the second threshold are distinct;
program the parity data and the data to the non-volatile memory when the parity data stored in the RAM is greater than the second threshold;
detect the power loss incident;
encode new data stored in the RAM since the programming to create new parity data in response to detecting the power loss incident; and
program the new data, not yet programmed to the non-volatile memory, and the new parity data, not yet programmed to the non-volatile memory, to the non-volatile memory.
12. The data storage device of claim 11 , wherein the parity data is programmed to a high capacity memory, and wherein the high capacity memory comprises triple level cell (TLC) memory and quad level cell (QLC) memory.
13. The data storage device of claim 12 , wherein the data, the new data, and the new parity data are programmed to SLC.
14. The data storage device of claim 11 , wherein the pre-encoding occurs to less than all available data.
15. The data storage device of claim 11 , wherein a first size of the parity data is greater than a second size of the new parity data.
16. The data storage device of claim 11 , wherein the new parity data comprises data changes since programming the parity data.
17. The data storage device of claim 11 , wherein the controller is further configured to:
determine whether changes in the RAM have exceeded the first threshold; and
upon exceeding the first threshold, pre-encode a new version of the parity data prior to the power loss incident.
18. A data storage device, comprising:
memory means;
means to determine whether changes in random access memory (RAM) exceeds a first threshold, wherein the first threshold corresponds to a time since last pre-encoding data;
means to pre-encode data to create parity data prior to detecting a power loss incident, wherein the pre-encoding occurs in response to the determining;
means to determine that the parity data stored in the RAM is greater than a second threshold, wherein the data and the parity data is not yet programmed to the memory means, wherein the first threshold and the second threshold are distinct;
means to program the data associated with the parity data and the parity data stored in the RAM to the memory means when the parity data stored in the RAM is greater than the second threshold;
means to detect a power loss incident; and
means to program only data, not yet programmed to the memory means, and only parity data, not yet programmed to the memory means, to the memory means.
19. The data storage device of claim 18 , further comprising means to selectively determine which data to pre-encode.
20. The data storage device of claim 18 , wherein the means to program is further configured to store data and parity data in different locations of the memory means.