Semiconductor structures including middle-of-line (MOL) capacitance reduction for self-aligned contact in gate stack
A method of forming a semiconductor structure includes forming a first middle-of-line (MOL) oxide layer and a second MOL oxide layer in the semiconductor structure. The first MOL oxide layer including multiple gate stacks formed on a substrate, and each gate stack of the gate stacks including a source/drain junction. A first nitride layer is formed over a silicide in the first MOL oxide layer. A second nitride layer is formed. Trenches are formed through the second nitride layer down to the source/drain junctions. A nitride cap of the plurality of gate stacks is selectively recessed. At least one self-aligned contact area (CA) element is formed within the first nitride layer. The first MOL oxide layer is selectively recessed. An air-gap oxide layer is deposited. The air gap oxide layer is reduced to the at least one self-aligned CA element and the first nitride layer.
1. A semiconductor structure comprising:
two parallel, adjacent metal gate stacks, wherein the two parallel, adjacent metal gate stacks comprise (i) an inner metal gate stack disposed between a first conductive trench and a second conductive trench and (ii) an outer metal gate stack disposed adjacent to a single conductive trench of the first and second conductive trenches, and wherein the single conductive trench is the second conductive trench;
a first contact area element contacting a top surface of the first conductive trench;
a second contact area element contacting a top surface of the second conductive trench;
an oxide layer disposed over the two parallel, adjacent metal gate stacks and adjacent to (i) the first conductive trench, (ii) the second conductive trench, (iii) the first contact area element, and (iv) the second contact area element; and
a first air gap disposed in the oxide layer, wherein the first air gap is disposed over the outer metal gate stack and adjacent to the top surface of the second conductive trench.
2. The semiconductor structure of claim 1 , further comprising:
a first spacer disposed between the inner metal gate stack and the first conductive trench; and
a second spacer disposed between the inner metal gate stack and the second conductive trench.
3. The semiconductor structure of claim 1 , further comprising:
a nitride cap layer disposed on the inner metal gate stack.
4. The semiconductor structure of claim 3 , further comprising a dielectric layer adjacent to the outer metal gate stack and disposed on a side of the outer metal gate stack that is opposite from the second conductive trench.
5. The semiconductor structure of claim 4 , wherein a top surface of the dielectric layer is disposed at substantially a same level as an upper surface of the nitride cap layer on the inner metal gate stack.
6. The semiconductor structure of claim 1 , further comprising:
a second air gap disposed in the oxide layer over the inner metal gate stack.
7. The semiconductor structure of claim 6 , wherein an upper portion of the second air gap extends vertically to a level below (i) a top surface of the first contact area element and (ii) a top surface of the second contact area element.
8. The semiconductor structure of claim 7 , wherein a bottom surface of a lower portion of the second air gap is disposed at a level lower than (i) the top surface of the first conductive trench and (ii) the top surface of the second conductive trench.
9. The semiconductor structure of claim 8 , further comprising:
a first selective metal cap disposed on a top surface of the inner metal gate stack; and
a second selective metal cap disposed on a top surface of the outer metal gate stack.
10. The semiconductor structure of claim 6 , wherein a bottom surface of a lower portion of the second air gap is disposed at a level lower than (i) the top surface of the first conductive trench and (ii) the top surface of the second conductive trench.
11. The semiconductor structure of claim 6 , further comprising:
a first selective metal cap disposed on a top surface of the inner metal gate stack; and
a second selective metal cap disposed on a top surface of the outer metal gate stack.
12. The semiconductor structure of claim 6 , further comprising a dielectric layer adjacent to the outer metal gate stack and disposed on a side of the outer metal gate stack that is opposite from the second conductive trench.
13. The semiconductor structure of claim 12 , wherein a top surface of the dielectric layer is disposed at substantially a same level as a bottom portion of (i) the first contact area element and (ii) the second contact area element.
14. The semiconductor structure of claim 1 , wherein an upper portion of the first air gap extends vertically to a level below a top surface of the second contact area element.
15. The semiconductor structure of claim 14 , further comprising a selective metal cap disposed on a top surface of an outer portion of the outer metal gate stack.
16. The semiconductor structure of claim 1 , wherein a bottom surface of a lower portion of the first air gap is disposed at a level lower than the top surface of the second conductive trench.
17. The semiconductor structure of claim 1 , further comprising a selective metal cap disposed on a top surface of an outer portion of the outer metal gate stack.
18. The semiconductor structure of claim 2 , further comprising a dielectric layer adjacent to the outer metal gate stack and disposed on a side of the outer metal gate stack that is opposite from the second conductive trench.
19. The semiconductor structure of claim 18 , further comprising a third spacer disposed between the outer metal gate stack and the dielectric layer.
20. The semiconductor structure of claim 18 , wherein a top surface of the dielectric layer is disposed at substantially a same level as a bottom portion of (i) the first contact area element and (ii) the second contact area element.
21. The semiconductor structure of claim 1 , wherein:
an upper portion of the first air gap is adjacent to the second contact area element and extends vertically to a level above the top surface of the second conductive trench; and
a lower portion of the first air gap is adjacent to the second conductive trench and extends vertically to a level below the top surface of the second conductive trench.
22. The semiconductor structure of claim 1 , wherein:
a top surface of the first air gap is disposed at a level above the top surface of the second conductive trench and below a top surface of the second contact area element; and
a bottom surface of the first air gap is disposed at a level below the top surface of the second conductive trench and above a top surface of the outer metal gate stack.
23. The semiconductor structure of claim 22 , further comprising a nitride cap layer disposed on the inner metal gate stack.
24. The semiconductor structure of claim 22 , further comprising a second air gap disposed in the oxide layer over the inner metal gate stack.