Set-while-verify circuit and reset-while verify circuit for resistive random access memory cells
Numerous embodiments of circuitry for a set-while-verify operation and a reset-while verify operation for resistive random access memory cells are disclosed. In one embodiment, a set-while-verify circuit for performing a set operation on a selected RRAM cell in the array applies a combination of voltages or current to a bit line, word line, and source line associated with the selected RRAM cell and stops said applying when the set operation is complete. In another embodiment, a reset-while-verify circuit for performing a reset operation on a selected RRAM cell in the array applies a combination of voltages or current to a bit line, word line, and source line associated with the selected RRAM cell and stops said applying when the reset operation is complete.
1. A non-volatile memory system comprising:
an array of resistive random access memory (RRAM) cells organized into rows and columns, wherein each cell comprises a top electrode, a bottom electrode, and a switching layer between the top electrode and bottom electrode;
a plurality of bit lines, each bit line coupled to a column of RRAM cells;
a plurality of word lines, each word line coupled to a row of RRAM cells;
a plurality of source lines, each source line coupled to two adjacent rows of RRAM cells; and
a set-while-verify circuit for performing a set operation on a selected RRAM cell in the array by applying a ramping voltage to a bit line coupled to the selected RRAM cell until a current through the selected RRAM cell exceeds a target set current, wherein the set-while-verify circuit comprises a top compliance current source.
2. A non-volatile memory system comprising:
an array of resistive random access memory (RRAM) cells organized into rows and columns, wherein each cell comprises a top electrode, a bottom electrode, and a switching layer between the top electrode and bottom electrode;
a plurality of bit lines, each bit line coupled to a column of RRAM cells;
a plurality of word lines, each word line coupled to a row of RRAM cells;
a plurality of source lines, each source line coupled to two adjacent rows of RRAM cells; and
a set-while-verify circuit for performing a set operation on a selected RRAM cell in the array by applying a ramping voltage to a bit line coupled to the selected RRAM cell until a current through the selected RRAM cell exceeds a target set current, wherein the set-while-verify circuit comprises a bottom compliance current source.