TLC data programming with hybrid parity
The present disclosure generally relates to improving programming to data storage devices, such as solid state drives (SSDs). A first memory device has a first XOR element and a second memory device has a second XOR element. The ratio of the first XOR element to the capacity of the first memory device is substantially smaller than the ratio of the second XOR element to the capacity of the second memory device. A read verify operation to find program failures is executed on either a wordline to wordline basis, an erase block to erase block basis, or both a wordline to wordline basis and an erase block to erase block basis. Because the program failures are found and fixed prior to programming to the second memory device, the second XOR element may be decreased substantially.
1. A data storage device, comprising:
a memory device; and
a controller coupled to the memory device, wherein the controller is configured to:
receive host data from a host device;
generate first exclusive or (XOR) parity data for the host data;
encode the host data and the first XOR parity data with an encoder;
write the encoded host data and the first XOR parity data to a first memory superblock;
decode valid data and the first XOR parity data written to the first memory superblock, wherein the valid data corresponds with the host data that has not become obsolete when located in the first memory superblock;
generate second XOR parity data for the decoded valid data;
re-encode the decoded valid data and the second XOR parity data with the encoder; and
write the re-encoded valid data and the second XOR parity data to a second memory superblock, wherein the re-encoded second XOR parity data has a size that is less than the size of the first XOR parity data.
2. The data storage device of claim 1 , wherein the memory device comprises a plurality of dies, and wherein each of the plurality of dies comprises a first plane and a second plane.
3. The data storage device of claim 2 , wherein at least one plane of the first plane and the second plane includes exclusive or (XOR) data.
4. The data storage device of claim 1 , wherein the controller is further configured to:
write data to a first wordline of plurality of wordlines of the memory device;
write data to a second wordline of the plurality of wordlines;
perform a first read verify operation on the first wordline; and
perform a second read verify operation on the second wordline, wherein at least one of the first wordline and the second wordline does not include an XOR parity element.
5. The data storage device of claim 4 , wherein the first read verify operation and the second read verify operation are enhanced post write read (EPWR).
6. The data storage device of claim 4 , wherein the XOR parity element is at least one of a full die redundancy, a full plane redundancy, and an erase block redundancy.
7. The data storage device of claim 1 , wherein the decoder and the encoder are disposed in a front module of the data storage device.
8. The data storage device of claim 7 , wherein the first XOR parity data is generated in a front end module separate from the front module.