Bulk acoustic wave resonators with patterned mass loading layers
Aspects of this disclosure relate to bulk acoustic wave resonators with patterned mass loading layers. Two different bulk acoustic wave resonators of an acoustic wave filter and/or an acoustic wave die have respective patterned mass loading layers with different densities. The patterned mass loading layers contribute to the two different bulk acoustic wave resonators having different respective resonant frequencies. Related bulk acoustic wave devices, filters, acoustic wave dies, radio frequency modules, wireless communication devices, and methods are disclosed.
1. An acoustic wave filter comprising:
a first bulk acoustic wave resonator including a first patterned mass loading layer having a first density, the first patterned mass loading layer impacting a resonant frequency of the first bulk acoustic wave resonator; and
a second bulk acoustic wave resonator including a second patterned mass loading layer having a second density, the second density being different than the first density, the second patterned mass loading layer impacting a resonant frequency of the second bulk acoustic wave resonator, and the bulk acoustic wave filter being arranged to filter a radio frequency signal.
2. The acoustic wave filter of claim 1 wherein the first patterned mass loading layer has a periodic pattern.
3. The acoustic wave filter of claim 1 wherein the first patterned mass loading layer includes a plurality of strips spaced apart from each other.
4. The acoustic wave filter of claim 1 wherein the first patterned mass loading layer includes a metal.
5. The acoustic wave filter of claim 1 wherein the first patterned mass loading layer includes a dielectric material.
6. The acoustic wave filter of claim 1 wherein the first patterned mass loading layer is positioned below a piezoelectric layer of the first bulk acoustic wave resonator.
7. The acoustic wave filter of claim 1 wherein the first patterned mass loading layer is positioned above a piezoelectric layer of the first bulk acoustic wave resonator.
8. The acoustic wave filter of claim 1 wherein the first patterned mass loading layer extends from a first piezoelectric layer of the first bulk acoustic wave resonator a same distance as the second patterned mass loading layer extends from a second piezoelectric layer of the second bulk acoustic wave resonator.
9. The acoustic wave filter of claim 1 further comprising a third bulk acoustic wave resonator that includes a third patterned mass loading layer having a third density, the third density being different than both the first density and the second density.
10. The acoustic wave filter of claim 1 wherein a resonant frequency of the first bulk acoustic wave resonator is in a range from 0.1% to 10% greater than a resonant frequency of the second bulk acoustic wave resonator.
11. The acoustic wave filter of claim 1 wherein the second patterned mass loading layer has a duty factor in a range from 0.05 to 0.95 in a central area of an active region of the first bulk acoustic wave resonator.
12. The acoustic wave filter of claim 11 wherein the first patterned mass loading layer has a duty factor in a range from 0.05 to 0.95 in a central area of an active region of the second bulk acoustic wave resonator.
13. An acoustic wave die comprising:
a first bulk acoustic wave resonator on the bulk acoustic wave die, the first bulk acoustic wave resonator including a first patterned mass loading layer having a first density, the first patterned mass loading layer impacting a resonant frequency of the second bulk acoustic wave resonator; and
a second bulk acoustic wave resonator on the bulk acoustic wave die, the second bulk acoustic wave resonator including a second patterned mass loading layer having a second density, the second density being higher than the first density, the second patterned mass loading layer impacting a resonant frequency of the second bulk acoustic wave resonator.
14. The acoustic wave die of claim 13 wherein the first bulk acoustic wave resonator and the second bulk acoustic wave resonator are included in a same filter.
15. The acoustic wave die of claim 13 wherein the first bulk acoustic wave resonator and the second bulk acoustic wave resonator are included in different filters.
16. The acoustic wave die of claim 13 wherein the first patterned mass loading layer includes a plurality of strips spaced apart from each other.
17. The acoustic wave die of claim 13 further comprising a third bulk acoustic wave resonator that includes a third patterned mass loading layer having a third density, the third density being different than both the first density and the second density.
18. The acoustic wave die of claim 13 wherein a resonant frequency of the first bulk acoustic wave resonator is in a range from 0.1% to 10% greater than a resonant frequency of the second bulk acoustic wave resonator.
19. The acoustic wave die of claim 13 wherein the first patterned mass loading layer has a duty factor in a range from 0.05 to 0.95 in a central area of an active region of the first bulk acoustic wave resonator.
20. A radio frequency module comprising:
an acoustic wave filter including a first bulk acoustic wave resonator and a second bulk acoustic wave resonator, the first bulk acoustic wave resonator including a first patterned mass loading layer having a first density and impacting a resonant frequency of the first bulk acoustic wave resonator, the second bulk acoustic wave resonator including a second patterned mass loading layer having a second density, the second density being higher than the first density, and the second patterned mass loading layer, the second patterned mass loading layer impacting a resonant frequency of the second bulk acoustic wave resonator; and
a radio frequency circuit element coupled to an acoustic wave filter that includes at least the first bulk acoustic wave resonator, the acoustic wave filter and the radio frequency circuit element being enclosed within a common module package.