Bulk acoustic wave resonators with patterned mass loading layers
Aspects of this disclosure relate to bulk acoustic wave resonators with patterned mass loading layers. Two different bulk acoustic wave resonators of an acoustic wave filter and/or an acoustic wave die have respective patterned mass loading layers with different densities. The patterned mass loading layers contribute to the two different bulk acoustic wave resonators having different respective resonant frequencies. Related bulk acoustic wave devices, filters, acoustic wave dies, radio frequency modules, wireless communication devices, and methods are disclosed.
1. An acoustic wave filter comprising:
a first bulk acoustic wave resonator having a first main acoustically active region and a first frame region, the first bulk acoustic wave resonator including a first patterned mass loading layer having a first duty factor in the first main acoustically active region and a first raised frame structure in the first frame region;
a second bulk acoustic wave resonator having a second main acoustically active region and a second frame region, the second bulk acoustic wave resonator including a second patterned mass loading layer having a second duty factor in the second main acoustically active region and a second raised frame structure in the second frame region, the second duty factor being different than the first duty factor; and
a plurality of additional acoustic wave resonators, the first bulk acoustic wave resonator, the second bulk acoustic wave resonator, and the plurality of additional acoustic wave resonators together configured to filter a radio frequency signal.
2. The acoustic wave filter of claim 1 wherein the first patterned mass loading layer includes a plurality of strip lines spaced apart from each other.
3. The acoustic wave filter of claim 2 wherein the first patterned mass loading layer has a periodic pattern.
4. The acoustic wave filter of claim 2 wherein the plurality of strip lines have a pitch that is less than 3 times a stack height, the stack height being a thickness of a stack of the first bulk acoustic wave resonator from a first passivation layer adjacent an acoustic reflector to a second passivation layer on a opposite side of the first bulk acoustic wave resonator.
5. The acoustic wave filter of claim 1 wherein the first patterned mass loading layer is in physical contact with an electrode of the first bulk acoustic wave resonator, and the first patterned mass loading layer and the electrode are formed of a same material.
6. The acoustic wave filter of claim 1 wherein the first patterned mass loading layer is in physical contact with a passivation layer of the first bulk acoustic wave resonator, and the first patterned mass loading layer and the passivation layer are formed of a same material.
7. The acoustic wave filter of claim 1 wherein a material of the first patterned mass loading layer has a higher density than a material of an electrode of the first bulk acoustic wave resonator.
8. The acoustic wave filter of claim 1 wherein the first bulk acoustic wave resonator includes a piezoelectric layer, an electrode, and a passivation layer, and the electrode and the passivation layer are positioned between the first patterned mass loading layer and the piezoelectric layer.
9. The acoustic wave filter of claim 1 wherein the first bulk acoustic wave resonator includes a passivation layer, and the first patterned mass loading layer is embedded in the passivation layer.
10. The acoustic wave filter of claim 1 wherein a difference between the first duty factor and the second duty factor causes at least 40 megahertz difference between a resonant frequency of the first bulk acoustic wave resonator and a resonant frequency of the second bulk acoustic wave resonator.
11. The acoustic wave filter of claim 1 wherein a difference between the first duty factor and the second duty factor causes the first bulk acoustic wave resonator to have a resonant frequency that is different from a resonant frequency of the second bulk acoustic wave resonator by an amount in a range from about 1% to about 10% of the resonant frequency of the second bulk acoustic wave resonator.
12. The acoustic wave filter of claim 1 further comprising a third bulk acoustic wave resonator that includes a third patterned mass loading layer having a third duty factor, the third duty factor being different than both the first duty factor and the second duty factor.
13. The acoustic wave filter of claim 1 wherein the first raised frame structure includes a plurality of layers.
14. An acoustic wave die comprising:
a first bulk acoustic wave resonator on the acoustic wave die, the first bulk acoustic wave resonator having a first main acoustically active region and a first frame region, the first bulk acoustic wave resonator including a first patterned mass loading layer having a first duty factor in the first main acoustically active region and a first raised frame structure in the first frame region; and
a second bulk acoustic wave resonator on the acoustic wave die, the second bulk acoustic wave resonator having a second main acoustically active region and a second frame region, the second bulk acoustic wave resonator including a second patterned mass loading layer having a second duty factor in the second main acoustically active region and a second raised frame structure in the second frame region, the second duty factor being different than the first duty factor.
15. The acoustic wave die of claim 14 wherein the first bulk acoustic wave resonator and the second bulk acoustic wave resonator are included in a same filter.
16. The acoustic wave die of claim 14 wherein the first bulk acoustic wave resonator and the second bulk acoustic wave resonator are included in different filters.
17. The acoustic wave die of claim 14 wherein the first patterned mass loading layer includes a plurality of strip lines spaced apart from each other in a periodic pattern.
18. A bulk acoustic wave resonator having a main acoustically active region and a frame region, the bulk acoustic wave resonator comprising:
a first electrode;
a second electrode;
a piezoelectric layer positioned between the first electrode and the second electrode in at least the main acoustically active region;
a patterned mass loading layer having a duty factor in a range from 0.05 to 0.95 in the main acoustically active region; and
a raised frame structure in the frame region.
19. The bulk acoustic wave resonator of claim 18 wherein the duty factor is in a range from 0.3 to 0.7.
20. The bulk acoustic wave resonator of claim 18 wherein the patterned mass loading layer includes strip lines spaced apart from each other.