3D semiconductor device and structure
A 3D semiconductor device, the device including: a first level including a first single crystal layer and first transistors, where the first transistors each include a single crystal channel; first metal layers interconnecting at least the first transistors; and a second level including a second single crystal layer and second transistors, where the second level overlays the first level, where the second transistors are horizontally oriented and include a gate dielectric, where the gate dielectric includes hafnium oxide, where the second level is bonded to the first level, and where the bonded includes oxide to oxide bonds.
1. A 3D semiconductor device, the device comprising:
a first level comprising a first single crystal layer and first transistors,
wherein said first transistors each comprise a single crystal channel;
first metal layers interconnecting at least said first transistors; and
a second level comprising a second single crystal layer and second transistors,
wherein said second level overlays said first level,
wherein said second transistors are horizontally oriented and comprise a gate dielectric,
wherein said gate dielectric comprises hafnium oxide,
wherein said second level is bonded to said first level, and
wherein said bonded comprises oxide to oxide bonds.
2. The device according to claim 1 ,
wherein said at least one of said second transistors is a Recessed Channel Array Transistor (“RCAT”).
3. The device according to claim 1 ,
wherein said second transistors each comprise at least two side-gates.
4. The device according to claim 1 ,
wherein at least one of said second transistors is an N-type transistor, and
wherein at least one of said second transistors is a P-type transistor.
5. The device according to claim 1 ,
wherein said first level comprises third transistors and fourth transistors,
wherein said fourth transistors are overlying said third transistors, and
wherein said third transistors and said fourth transistors are self-aligned, being processed following the same lithography step.
6. The device according to claim 1 ,
wherein said bonded comprises metal to metal bonds.
7. The device according to claim 1 ,
wherein said second level comprises a memory array, and
wherein said first level comprises control circuits controlling data written to said memory array.
8. A 3D semiconductor device, the device comprising:
a first level comprising a first single crystal layer and first transistors,
wherein said first transistors each comprise a single crystal channel;
first metal layers interconnecting at least said first transistors; and
a second level comprising a second single crystal layer and second transistors,
wherein said second level overlays said first level,
wherein said second transistors are horizontally oriented,
wherein said at least one of said second transistors is a Recessed Channel Array Transistor (“RCAT”),
wherein said second level is bonded to said first level, and
wherein said bonded comprises oxide to oxide bonds.
9. The device according to claim 8 ,
wherein said at least one of said second transistor comprises a gate dielectric, and
wherein said gate dielectric comprises hafnium oxide.
10. The device according to claim 8 ,
wherein said second transistors each comprise at least two side-gates.
11. The device according to claim 8 , further comprising:
a second metal layer and a third metal layer,
wherein said second metal layer is disposed above said first metal layers,
wherein said third metal layer is above said second metal layer and below said second single crystal layer,
wherein said second metal comprises a first thickness and said third metal comprises a second thickness, and
wherein said first thickness is significantly greater than said second thickness.
12. The device according to claim 8 ,
wherein said bonded comprises metal to metal bonds.
13. The device according to claim 8 ,
wherein said second level comprises a memory array, and
wherein said first level comprises control circuits controlling data written to said memory array.
14. A 3D semiconductor device, the device comprising:
a first level comprising a first single crystal layer and first transistors,
wherein said first transistors each comprise a single crystal channel;
first metal layers interconnecting at least said first transistors;
a second level comprising a second single crystal layer and second transistors,
wherein said second level overlays said first level; and
a second metal layer and a third metal layer,
wherein said second metal layer is disposed above said first metal layer,
wherein said third metal layer is above said second metal layer and below said second single crystal layer,
wherein said second metal comprises a first thickness and said third metal comprises a second thickness,
wherein said first thickness is significantly greater than said second thickness,
wherein said second level is bonded to said first level, and
wherein said bonded comprises oxide to oxide bonds.
15. The device according to claim 14 , wherein at least one of said second transistors is a Recessed Channel Array Transistor (“RCAT”).
16. The device according to claim 14 , wherein said second transistors each comprise at least two side-gates.
17. The device according to claim 14 , wherein said second transistors are horizontally oriented and comprise a gate dielectric, and wherein said gate dielectric comprises hafnium oxide.
18. The device according to claim 14 , wherein said bonded comprises metal to metal bonds.
19. The device according to claim 14 , wherein said second level comprises a memory array, and wherein said first level comprises control circuits controlling data written to said memory array.
20. The device according to claim 14 , wherein said first level comprises third transistors and fourth transistors, wherein said fourth transistors are overlying said third transistors, and wherein said third transistors and said fourth transistors are self-aligned, being processed following the same lithography step.