ELECTRONIC FUSE (E-FUSE) WITH DISPLACEMENT-PLATED E-FUSE TERMINALS
An electronic fuse (e-fuse) module may be formed in copper interconnect in an integrated circuit device. A pair of e-fuse terminals may be formed by forming a pair of spaced-apart e-fuse terminal structures (e.g., copper damascene structures) and forming a conductive barrier region on each e-fuse terminal structure. The barrier regions may be formed by displacement plating a conductive barrier layer, e.g., comprising CoWP, CoWB, Pd, CoP, Ni, Co, or Ni—Co alloy, on each e-fuse terminal structure. An e-fuse element, e.g., comprising NiCr, TiW, TiWN, or Al, may be formed on the barrier regions of the pair of e-fuse terminals to define a conductive path between the pair of e-fuse terminal structures through the e-fuse element and through the barrier region on each e-fuse terminal structure. The barrier regions may protect the e-fuse terminal structures (e.g., copper structures) from corrosion and/or diffusion.
1 - 11 . (canceled)
12 . An integrated circuit structure, comprising:
an electronic fuse (e-fuse) module, comprising:
a pair of spaced-apart e-fuse terminals spaced apart from each other in a dielectric region, each of the e-fuse terminals comprising:
an e-fuse terminal structure formed in the dielectric region; and
a barrier region at a top of the e-fuse terminal structure;
an e-fuse element formed on the pair of spaced-apart e-fuse terminals to define a conductive path between the pair of e-fuse terminal structures through the e-fuse element and through the barrier region at the top of each metal e-fuse terminal structure.
13 . The integrated circuit structure of claim 12 , wherein the barrier region at the top of each e-fuse terminal structure comprises a displacement-plated barrier region.
14 . The integrated circuit structure of claim 12 , wherein the barrier region at the top of each e-fuse terminal structure comprises cobalt tungsten phosphide (CoWP).
15 . The integrated circuit structure of claim 12 , wherein the e-fuse terminal structures each comprise copper damascene structures.
16 . The integrated circuit structure of claim 12 , wherein the e-fuse element fully covers a top area of each e-fuse terminal.
17 . The integrated circuit structure of claim 12 , wherein the e-fuse element covers only a partial portion of a top area of each e-fuse terminal.
18 . The integrated circuit structure of claim 12 , wherein the e-fuse film includes (a) a pair of terminal regions, each covering a top area of one of the e-fuse terminals and (b) a connecting region connecting the pair of terminal regions, the connecting region having a smaller width than a width of each of the terminal regions.
19 . An integrated circuit structure, comprising:
an electronic fuse (e-fuse) module comprising:
a pair of spaced-apart e-fuse terminals, each comprising:
an e-fuse terminal structure formed in a first metal layer; and
a barrier region formed on the e-fuse terminal structure; and
an e-fuse element formed on the pair of spaced-apart e-fuse terminals to define a conductive path connecting the pair of e-fuse terminal structures through the e-fuse element and through the barrier region formed on each e-fuse terminal structure; and
an interconnect structure comprising:
an interconnect element formed in the first metal layer; and
a barrier region formed on the interconnect element.
20 . The integrated circuit structure of claim 19 , wherein the barrier region formed on each e-fuse terminal structure and the barrier region formed on the interconnect trench element each comprise a displacement-plated barrier region.
21 . The integrated circuit structure of claim 19 , wherein the barrier region formed on each e-fuse terminal structure and the barrier region formed on the interconnect trench element each comprise cobalt tungsten phosphide (CoWP).
22 . The integrated circuit structure of claim 19 , wherein the pair of e-fuse terminal structures and the interconnect trench element comprise copper damascene structures.
23 . The integrated circuit structure of claim 19 , further comprising an e-fuse film region formed on the barrier region formed on the interconnect trench element and spaced apart from the e-fuse element, wherein the e-fuse film region and the e-fuse element are formed from a common e-fuse film.
24 . The integrated circuit structure of claim 19 , wherein the e-fuse element comprises NiCr, TiW, TiWN, or Al.