Integrated circuit structure and method

1. A method of forming a semiconductor device, the method comprising:

bonding a first plurality of dies to an interposer, the interposer being a wafer comprising silicon, the interposer comprising a plurality of conductive features, each die of the first plurality of dies being bonded to a respective conductive feature of the plurality of conductive features;

encapsulating the first plurality of dies with an encapsulant;

forming a first interconnect over a first surface of the interposer, the first surface being opposite the first plurality of dies, forming the first interconnect comprising:

forming a bottom portion of the first interconnect;

placing a magnetic core on the bottom portion of the first interconnect; and

forming a top portion of the first interconnect over the bottom portion of the first interconnect and the magnetic core, wherein forming the top portion forms a solenoid inductor comprising the magnetic core;

forming a first plurality of contact pads on the first interconnect opposite the interposer; and

attaching a first device to the first interconnect, the first device being electrically coupled to contact pads of the first plurality of contact pads.

2. The method of claim 1 , wherein bonding the first plurality of dies to the interposer comprises forming a metal-metal bond and forming an oxide-oxide bond.

3. The method of claim 1 , wherein a die of the first plurality of dies comprises static random access memory (SRAM) circuitry.

4. The method of claim 1 , wherein the interposer comprises a plurality of embedded passive components.

5. The method of claim 1 , wherein the interposer comprises static random access memory (SRAM) circuitry.

6. The method of claim 5 further comprising:

forming a conductive via on the interposer;

bonding an integrated passive device (IPD) die to the interposer; and

encapsulating the conductive via and the IPD die with a second encapsulant.

7. The method of claim 1 , further comprising forming a bolt hole through the interposer and the first interconnect.

8. A method of forming a semiconductor device, the method comprising:

forming a redistribution structure over an interposer, the interposer comprising static random access memory (SRAM) circuitry, wherein forming the redistribution structure comprises:

depositing a first dielectric layer over a first side of the interposer;

forming a first metallization pattern over the first dielectric layer;

depositing a second dielectric layer over the first metallization pattern;

attaching a magnetic core sheet to the second dielectric layer;

depositing a third dielectric layer over the magnetic core sheet and the second dielectric layer;

forming a second metallization pattern over the third dielectric layer, wherein the magnetic core sheet, a first portion of the first metallization pattern, and a second portion of the second metallization pattern form a solenoid inductor; and

depositing a fourth dielectric layer over the second metallization pattern;

forming a first contact pad over the fourth dielectric layer, the first contact pad being electrically coupled with the second metallization pattern; and

attaching a component to the first contact pad.

9. The method of claim 8 , wherein the component comprises a pulse width modulation circuit.

10. The method of claim 9 , wherein the pulse width modulation circuit is electrically coupled to the solenoid inductor, the solenoid inductor being a voltage regulator module for the pulse width modulation circuit.

11. The method of claim 8 , further comprising:

forming a second contact pad over the third dielectric layer, the second contact pad being electrically coupled with the second metallization pattern; and

attaching an external connector to the second contact pad.

12. The method of claim 8 , wherein the interposer is a wafer, the wafer comprising silicon.

13. The method of claim 8 , further comprising bonding a die to a second side of the interposer, the second side being opposite the first side.

14. The method of claim 13 , wherein bonding the die to the second side of the interposer comprises forming an oxide-oxide bond.

15. The method of claim 13 , wherein the die comprises an integrated passive device.

16. The method of claim 13 , wherein the die comprises an input/output device.

17. A method of forming a semiconductor device, the method comprising:

bonding a die to a first conductive feature of an interposer, the first conductive feature being part of a first surface of the interposer;

encapsulating the die with an encapsulant;

forming an interconnect structure over a second surface of the interposer, the second surface being opposite the first surface, wherein forming the interconnect structure comprises:

forming a bottom portion of the interconnect structure;

attaching a magnetic core sheet to the bottom portion of the interconnect structure; and

forming a top portion of the interconnect structure over the bottom portion of the interconnect structure and the magnetic core sheet, wherein the top portion of the interconnect structure, the magnetic core sheet, and the bottom portion of the interconnect structure form a solenoid inductor;

forming a contact pad over the interconnect structure, wherein the contact pad is electrically coupled to the solenoid inductor;

attaching an external connector to the contact pad; and

forming a bolt hole through the interposer and the interconnect structure.

18. The method of claim 17 , wherein the external connector comprises a grating coupler, the grating coupler being configured to optically couple to an optical fiber.

19. The method of claim 17 , further comprising attaching a thermal module to the die, wherein the thermal module is secured to the interposer and the interconnect structure with a bolt extending through the bolt hole.

20. The method of claim 17 , wherein the magnetic core sheet has a height in a range of 1 μm to 10 μm.