Cleaning system for removing deposits from pump in an exhaust of a substrate processing system
An exhaust system for a substrate processing system includes a radical generator configured to receive a gas mixture including halogen species and to generate halogen radicals, a first pump to pump exhaust gas from an exhaust outlet of a processing chamber, and a first valve configured to selectively fluidly connect an outlet of the radical generator to the first pump downstream from the outlet of the processing chamber.
1. An exhaust system for a substrate processing system, comprising:
a radical generator arranged external to and downstream from a processing chamber, the radical generator configured to receive a gas mixture including halogen species and to generate halogen radicals;
a mixing bowl separate from the radical generator and connected to the radical generator to receive the halogen radicals from the radical generator, the mixing bowl being a passive component comprising an inlet configured to receive exhaust from the processing chamber and including a structure within the mixing bowl to collect process deposits from the exhaust, the structure providing additional volume and surface area to increase formation of deposits on internal surfaces of the mixing bowl, the mixing bowl configured to convert the process deposits into gas phase using the halogen radicals received from the radical generator;
a first pump connected to an outlet of the mixing bowl, the first pump configured to pump the process deposits in the gas phase from the mixing bowl, the first pump receiving the halogen radicals from the outlet of the mixing bowl that clean the first pump; and
a first valve configured to selectively fluidly connect an outlet of the radical generator to the inlet of the mixing bowl;
wherein a second inlet of the mixing bowl is fluidly connected to the radical generator.
2. The exhaust system of claim 1 , further comprising:
a gas detector fluidly connected to an outlet of the first pump; and
a controller configured to communicate with the gas detector and to cause cleaning of the first pump to be performed until a gas concentration of a predetermined gas species is less than a predetermined threshold.
3. The exhaust system of claim 1 , further comprising a second valve configured to selectively fluidly connect a second outlet of the radical generator to the second inlet of the mixing bowl.
4. The exhaust system of claim 2 , further comprising:
a second pump having an inlet fluidly connected to an exhaust outlet of the processing chamber and an outlet fluidly connected to the inlet of the mixing bowl.
5. The exhaust system of claim 4 , wherein the second pump comprises a turbomolecular pump and wherein the first pump is selected from a group consisting of a roughing pump and a dry pump.
6. The exhaust system of claim 1 , wherein the structure is a trap.
7. The exhaust system of claim 1 , further comprising:
a purge gas source; and
a second valve configured to selectively fluidly connect the purge gas source to the first pump.
8. The exhaust system of claim 4 , further comprising:
a second valve configured to selectively fluidly connect an outlet of the first pump to an inlet of the gas detector;
a third pump connected to an outlet of the gas detector; and
a third valve configured to selectively fluidly connect an outlet of the third pump to an abatement system.
9. A substrate processing system comprising:
the exhaust system of claim 1 ;
the processing chamber;
a remote plasma source configured to generate remote plasma and to selectively deliver the remote plasma to the processing chamber; and
a controller configured to selectively perform chamber cleaning using the remote plasma source and to perform pump cleaning using the radical generator.
10. The substrate processing system of claim 9 , wherein the controller is configured to perform the chamber cleaning during a first period and the pump cleaning during a second period.
11. The substrate processing system of claim 10 , wherein the second period at least partially overlaps the first period.
12. The substrate processing system of claim 10 , wherein the second period sequentially follows the first period.
13. The substrate processing system of claim 10 , wherein the first period sequentially follows the second period.
14. The substrate processing system of claim 9 , wherein the controller performs the chamber cleaning after X substrates are processed after a prior chamber cleaning and performs the pump cleaning after Y substrates are processed after a prior pump cleaning, where X and Y are integers greater than one.
15. The substrate processing system of claim 14 , wherein X is not equal to Y.
16. The substrate processing system of claim 9 , further comprising:
a purge gas source; and
a second valve configured to selectively fluidly connect the purge gas source to the first pump,
wherein the controller performs chamber cleaning during a first period, pump cleaning during a second period and substrate processing during a third period,
wherein the controller supplies purge gas at a first flow rate during at least one of the first period and the second period and at a second flow rate during the third period, and
wherein the second flow rate is higher than the first flow rate.
17. An exhaust system for a substrate processing system, comprising:
a radical generator external to and downstream from a processing chamber, the radical generator configured to receive a gas mixture including halogen species and to generate halogen radicals;
a mixing bowl separate from the radical generator and connected to the radical generator to receive the halogen radicals from the radical generator, the mixing bowl being a passive component comprising an inlet configured to receive exhaust from the processing chamber and including a trap within the mixing bowl to collect process deposits from the exhaust, wherein the trap includes a structure that provides additional volume and surface area to increase formation of deposits on internal surfaces of the mixing bowl, the mixing bowl configured to convert the process deposits into gas phase using the halogen radicals received from the radical generator; and
a first pump connected to an outlet of the mixing bowl, the first pump configured to pump the process deposits in the gas phase from the mixing bowl, the first pump receiving the halogen radicals from the outlet of the mixing bowl to clean the first pump; and
a first valve configured to selectively fluidly connect an outlet of the radical generator to the inlet of the mixing bowl;
wherein a second inlet of the mixing bowl is fluidly connected to the radical generator.