IP Library › Granted Patent US 7,229,843
Granted Patent B2
US 7,229,843 · App. 11/062,470 · Granted Jun 12, 2007

Device and method for monitoring process exhaust gas, semiconductor manufacturing device, and system and method for controlling semiconductor manufacturing device

Assignee: Tokyo Electron Limited
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Quick Facts
Patent No.
US 7,229,843
App. No.
11/062,470
Granted
Jun 12, 2007
Kind
B2
Abstract

Process exhaust gas is sampled, and the components of the process exhaust gas are analyzed by a Fourier-transform infrared spectroscope (FT-IR) ( 26 ). The analysis result is compared with a reference analysis result obtained from an analysis of process exhaust gas generated in an operation performed under reference process conditions. If the amount of a gas component changes to an amount that is outside a predetermined range set around a reference value obtained from the reference analysis result, a signal indicating a process error is outputted. Instead of the output of the signal indicating a process error, the process conditions can be automatically adjusted.

Claims (43)

1. A method of controlling a semiconductor manufacturing device that exhausts process exhaust gas during operation, comprising the steps of:

sampling process gas at an exit of an exhaust vacuum pump that evacuates the process exhaust gas from a chamber of said semiconductor manufacturing device; and

sending analysis data obtained from an analysis made on components of the process exhaust gas from the chamber of the semiconductor manufacturing device, the analysis data being sent to a data communication network.

2. The method as claimed in claim 1 , wherein the analysis is made by a Fourier-transform infrared spectroscope.

3. The method as claimed in claim 1 , wherein:

a signal indicating an error is provided with accessory information related to the error and then transmitted to the data communication network,

the error in process conditions and the cause of the error are reported to an operation manager in accordance with the signal indicating the error, and

information related to the error is also reported to the operation manager in accordance with the accessory information.

4. A method of controlling at least one of a plurality of semiconductor manufacturing devices that exhausts process exhaust gas during operation, comprising:

sampling process gas at an exit of an exhaust vacuum pump that evacuates the process exhaust gas from a chamber of said at least one of a plurality of semiconductor manufacturing devices;

sending analysis data obtained from an analysis made on components of the exhaust process gas from the chamber of said semiconductor manufacturing device, the analysis data being sent to an analysis center;

constructing a database by accumulating the analysis data from the plurality of semiconductor manufacturing devices; and

controlling the at least one of the plurality of semiconductor manufacturing devices in accordance with the database.

5. The method as claimed in claim 4 , wherein the analysis is made by a Fourier-transform infrared spectroscope.

6. A method of controlling a semiconductor manufacturing device by monitoring process exhaust gas containing a plurality of gas components generated from a process carried out in a process chamber for a process object under predetermined process conditions, comprising:

sampling the process exhaust gas at an exit of an exhaust vacuum pump that evacuates the process exhaust gas from the process chamber;

analyzing the components of the process exhaust gas to produce analysis data;

sending the analysis data to a data communication network;

comparing the analysis data with reference analysis data of an analysis of process exhaust gas generated as a result of a process carried out under reference process conditions;

generating and outputting a signal indicating a process status based on at least one of a reference analysis result or the comparison between the analysis data and the reference analysis data; and

sending the signal indicating the process status to said semiconductor manufacturing device.

7. The method as claimed in claim 6 , wherein analyzing the components of the process exhaust gas is carried out by a Fourier-transform infrared spectroscope.

8. The method as claimed in claim 6 , further comprising:

providing an alarm in accordance with the signal indicating the process status.

9. The method as claimed in claim 6 , further comprising:

adjusting process conditions in accordance with the signal indicating the process status.

10. The method as claimed in claim 6 , wherein comparing includes storing the analysis data in a memory so as to compare a plurality of sets of analysis data with the reference analysis data.

11. The method as claimed in claim 6 , wherein comparing includes storing a plurality of sets of analysis data in association with each set of reference analysis data.

12. The method as claimed in claim 6 , further comprising:

switching process exhaust gas passages for sampling the process exhaust gas at a plurality of locations.

13. The method as claimed in claim 12 , further comprising:

controlling the analyzing and the switching.

14. The method as claimed in claim 13 , further comprising:

storing comparison data in a comparison result memory so that a comparison operation for each process is performed by supplying a signal during controlling and the comparison data is stored in the comparison result memory.

15. The method as claimed in claim 7 , further comprising:

introducing nitrogen gas used in a zero calibration operation of the Fourier-transform infrared spectroscope to a gas introduction unit of the Fourier-transform infrared spectroscope; and

controlling introducing nitrogen gas so that a zero calibration is performed at predetermined regular intervals.

16. The method as claimed in claim 6 , further comprising a step of adjusting a flow rate of the process exhaust gas.

17. The method as claimed in claim 16 , further comprising:

giving an alarm when the flow rate of the process exhaust gas is outside a predetermined range.

18. The method as claimed in claim 6 , further comprising:

supplying a constant flow of inert gas to a vacuum pump for exhausting the process exhaust gas.

19. The method as claimed in claim 6 , wherein comparing includes determining from the comparison result whether or not an amount of at least one gas component of the process exhaust gas has fallen outside of a predetermined range set around a reference value obtained from the reference analysis result, and the process status represents a process error.

Assignments (1)
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Feb 22, 2005
From: KOMIYAMA, KIYOSHI; SHIMODA, TAKAHIRO; NISHIKAWA, HIROSHI
To: TOKYO ELECTRON LIMITED
Reel/Frame 016322/0284 →
Priority Claims (2)
JP 11-303534 · Oct 26, 1999 · national
JP 2000-297203 · Sep 28, 2000 · national
Continuity (3)
Continuation 1076058100 · Jan 21, 2004
Division 1011148100
Related Publication 20050159899A1 · Jul 21, 2005