Photo-detecting apparatus with low dark current
A photo-detecting apparatus is provided. The photo-detecting apparatus includes a carrier conducting layer having a first surface; an absorption region is doped with a first dopant having a first conductivity type and a first peak doping concentration, wherein the carrier conducting layer is doped with a second dopant having a second conductivity type and a second peak doping concentration, wherein the carrier conducting layer comprises a material different from a material of the absorption region, wherein the carrier conducting layer is in contact with the absorption region to form at least one heterointerface, wherein a ratio between the first peak doping concentration of the absorption region and the second peak doping concentration of the carrier conducting layer is equal to or greater than 10; and a first electrode and a second electrode both formed over the first surface of the carrier conducting layer.
1. A photo-detecting apparatus, comprising:
a silicon substrate comprising:
a first portion having a first width, the first portion comprising a first n-doped region; and
a second portion supported by the first portion, wherein the second portion has a second width smaller than the first width, and wherein the second portion comprises an n-doped carrier conducting region that is in physical contact with at least a portion of the first n-doped region, and wherein the first n-doped region has a third width that is larger than the second width of the n-doped carrier conducting region;
an absorption region comprising germanium and configured to receive an optical signal and to generate photo-carriers in response to the optical signal, wherein the absorption region is at least partially embedded in the second portion of the substrate, and wherein the absorption region comprises a top surface and a bottom surface that is in physical contact with at least a portion of the n-doped carrier conducting region to form a heterointerface,
wherein the absorption region is p doped with a first peak doping concentration,
wherein the n-doped carrier conducting region has a second peak doping concentration,
wherein a ratio between the first peak doping concentration of the absorption region and the second peak doping concentration of the n-doped carrier conducting region is equal to or greater than 10,
wherein the n-doped carrier conducting region comprises a multiplication region configured to amplify a portion of the photo-carriers drifting from the absorption region to the first n-doped region;
a first electrode formed over the first n-doped region, wherein the first electrode is separated from the absorption region, wherein the first electrode is coupled to a circuitry that is configured to process amplified photo-carriers; and
a second electrode electrically coupled to the absorption region.
2. The photo-detecting apparatus according to claim 1 , wherein the n-doped carrier conducting region has a depth less than 5 μm.
3. The photo-detecting apparatus according to claim 1 , wherein the absorption region is doped with a graded doping profile.
4. The photo-detecting apparatus according to claim 1 , wherein at least 50% of the absorption region is doped with a doping concentration equal to or greater than 1×10 16 cm −3 .
5. The photo-detecting apparatus according to claim 1 , wherein a ratio of a doping concentration of the absorption region to a doping concentration of the n-doped carrier conducting region at the heterointerface is equal to or more than 10.
6. The photo-detecting apparatus according to claim 1 , wherein the optical signal has a peak wavelength in a wavelength range equal to or greater than 800 nm.
7. The photo-detecting apparatus according to claim 1 , wherein the absorption region further comprises a p-doped region formed on the top surface and coupled to the second electrode.
8. The photo-detecting apparatus according to claim 1 , wherein the photo-detecting apparatus is configured to operate in a Geiger mode under a reverse bias between the first electrode and the second electrode.
9. The photo-detecting apparatus according to claim 1 , wherein the first n-doped region has a third peak doping concentration that is larger than the second peak doping concentration of the n-doped carrier conducting region.
10. A photo-detecting apparatus, comprising:
a silicon substrate comprising:
a first portion having a first width, the first portion comprising a first n-doped region; and
a second portion supported by the first portion, wherein the second portion has a second width smaller than the first width, and wherein the second portion comprises:
an n-doped carrier conducting region that is in physical contact with at least a portion of the first n-doped region; and
a p-doped charge layer that is in physical contact with the n-doped carrier conducting region,
wherein the first n-doped region has a third width that is larger than the second width of the n-doped carrier conducting region;
an absorption region comprising germanium and configured to receive an optical signal and to generate photo-carriers in response to the optical signal, wherein the absorption region is at least partially embedded in the second portion of the substrate, wherein the absorption region comprises a top surface and a bottom surface that is in physical contact with at least a portion of the p-doped charge layer,
wherein the absorption region is p-doped with a first peak doping concentration,
wherein the n-doped carrier conducting region has a second peak doping concentration,
wherein a ratio between the first peak doping concentration of the absorption region and the second peak doping concentration of the n-doped carrier conducting region is equal to or greater than 10,
wherein the n-doped carrier conducting region comprises a multiplication region configured to amplify a portion of the photo-carriers drifting from the absorption region to the first n-doped region;
a first electrode formed over the first n-doped region, wherein the first electrode is separated from the absorption region, wherein the first electrode is coupled to a circuitry that processes amplified photo-carriers; and
a second electrode electrically coupled to the absorption region.
11. The photo-detecting apparatus according to claim 10 , wherein the n-doped carrier conducting region has a depth less than 5 μm.
12. The photo-detecting apparatus according to claim 10 , wherein the absorption region is doped with a graded doping profile.
13. The photo-detecting apparatus according to claim 10 , wherein at least 50% of the absorption region is doped with a doping concentration equal to or greater than 1×10 16 cm −3 .
14. The photo-detecting apparatus according to claim 10 , wherein the optical signal has a peak wavelength in a wavelength range equal to or greater than 800 nm.
15. The photo-detecting apparatus according to claim 10 , wherein the absorption region further comprises a p-doped region formed on the top surface and coupled to the second electrode.
16. The photo-detecting apparatus according to claim 10 , wherein the photo-detecting apparatus is configured to operate in a Geiger mode under a reverse bias between the first electrode and the second electrode.
17. The photo-detecting apparatus according to claim 10 , wherein the first n-doped region has a third peak doping concentration that is larger than the second peak doping concentration of the n-doped carrier conducting region.
18. The photo-detecting apparatus according to claim 10 , wherein the p-doped charge layer has a thickness between 10 nm to 500 nm.