Germanium-on-silicon avalanche photodetector in silicon photonics platform, method of making the same
A germanium-on-silicon avalanche photodetector includes a silicon device layer of a silicon-on-insulator substrate having a central region characterized by modest-heavy n+ doping state between a first electrode region and a second electrode region in heavy n++ doping state; a first sub-layer of the central region modified to nearly neutral doping state and located from a first depth down to a second depth below a top surface of the silicon device layer; a second sub-layer of the central region modified to modest p doping state embedded from the top surface down to the first depth to interface with the first sub-layer; a layer of germanium with a bottom side attached to the top surface of the second sub-layer; and a third sub-layer embedded into a top side of the layer of germanium, characterized by heavy p++ doping state.
1. An avalanche photodetector comprising:
a silicon layer having a junction embedded in the silicon layer, the junction being a p-type-intrinsic-n-type (PIN) junction or a p-type-n-type (PN) junction and formed of
a first embedded layer disposed beneath an external surface of the silicon layer, the first embedded layer comprising i) a first sub-region doped in a n+ doping state, and ii) a second sub-region disposed laterally from the first sub-region and doped in a p+ doping state, and
a second embedded layer disposed above the first embedded layer, the second embedded layer being (i) in contact with the external surface of the silicon layer, and (ii) comprising a sub-region doped in a p doping state;
an epitaxial germanium layer formed over the junction, the epitaxial germanium layer being in either an intrinsic state or a p doping state and being configured to function as a light absorption layer to absorb light; and
a plurality of electrode regions formed at least in the silicon layer, the electrode regions being configured to apply a reverse bias voltage across the junction to induce a photoelectric effect to convert light energy to electrical energy.
2. The avalanche photodetector of claim 1 , wherein the first sub-region and the second sub-region are at a same depth in the silicon layer.
3. The avalanche photodetector of claim 1 , wherein:
the plurality of electrode regions comprise a first electrode region and a second electrode region;
the first electrode region and the second electrode region are disposed laterally from the junction; and
the first electrode region and the second electrode region are at a same depth as the first sub-region and the second sub-region.
4. The avalanche photodetector of claim 1 , wherein the first embedded layer comprises a third sub-region disposed between the first sub-region and the second sub-region, the third sub-region being in an intrinsic state.
5. The avalanche photodetector of claim 4 , wherein:
the plurality of electrode regions comprise a first electrode region and a second electrode region disposed laterally from the junction; and
a width of the first sub-region, measured from the first electrode region to the third sub-region, is less than a width of the second sub-region measured from the third sub-region to the second electrode region.
6. The avalanche photodetector of claim 4 , wherein:
the plurality of electrode regions comprise a first electrode region and a second electrode region disposed laterally from the junction; and
the second embedded layer is not in contact with the first electrode region and is not in contact with the second electrode region.
7. The avalanche photodetector of claim 4 , wherein:
the plurality of electrode regions comprise a first electrode region and a second electrode region disposed laterally from the junction; and
the second embedded layer is not in contact with the first electrode region and is in contact with the second electrode region.
8. The avalanche photodetector of claim 4 , wherein:
the plurality of electrode regions comprise a first electrode region and a second electrode region disposed laterally from the junction; and
a width of the third sub-region is equal to a distance between the first electrode region and the second electrode region minus a width of the first sub-region and a width of the second sub-region.
9. The avalanche photodetector of claim 1 , wherein the first sub-region is in direct contact with the second sub-region.
10. The avalanche photodetector of claim 9 , wherein:
the plurality of electrode regions comprise a first electrode region and a second electrode region disposed laterally from the junction; and
the second embedded layer is not in contact with the first electrode region and is not in contact with the second electrode region.
11. The avalanche photodetector of claim 9 , wherein:
the plurality of electrode regions comprise a first electrode region and a second electrode region disposed laterally from the junction; and
the second embedded layer is not in contact with the first electrode region and is in contact with the second electrode region.
12. The avalanche photodetector of claim 1 , wherein:
the plurality of electrode regions comprise a first electrode region and a second electrode region disposed laterally from the junction; and
a width of the second embedded layer, measured laterally from a first peripheral outer edge of the second embedded layer facing the first electrode region to a second peripheral outer edge of the second embedded layer facing the second electrode region, is less than a width of the junction measured laterally from a peripheral outer edge of the first sub-region facing the first electrode region to a peripheral outer edge of the second sub-region facing the second electrode region.
13. The avalanche photodetector of claim 1 , wherein at least one of:
a thickness of the junction is 120-170 nanometers; and
a thickness of the second embedded layer is 50-100 nanometers.
14. The avalanche photodetector of claim 1 , wherein the second embedded layer comprises an intrinsic sub-region disposed between one of the plurality of electrode regions and the sub-region of the second embedded layer doped in the p doping state.
15. The avalanche photodetector of claim 1 , wherein:
the second embedded layer comprises two intrinsic sub-regions;
the sub-region of the second embedded layer doped in the p doping state is disposed between the two intrinsic sub-regions; and
one of the two intrinsic sub-regions is disposed on the first sub-region and the other one of the two intrinsic sub-regions is disposed on the second sub-region.
16. The avalanche photodetector of claim 1 , wherein a p-type doping concentration of the second embedded layer is between 1e12 cm −3 and 5e13 cm −3 .
17. The avalanche photodetector of claim 1 , wherein the epitaxial germanium layer tapers away from the silicon layer, wherein a first width of the epitaxial germanium layer measured at the junction is greater than a second width of the epitaxial germanium layer measured at a surface of the epitaxial germanium layer further away from the junction.
18. The avalanche photodetector of claim 1 , further comprising an oxide layer,
wherein the silicon layer is disposed on the oxide layer to provide a silicon-on-insulator substrate.
19. The avalanche photodetector of claim 1 , wherein the plurality of electrode regions comprise:
a first electrode region disposed in the silicon layer, the first electrode region being doped in a n++ doping state; and
a second electrode region disposed in the silicon layer, the second electrode region being doped in a p++ doping state.
20. The avalanche photodetector of claim 19 , wherein the junction is disposed between the first electrode region and the second electrode region.