Granted Patent B2

US 12,308,614 · App. 17/285,859 · Granted May 20, 2025

Inventor: Masaru Kuramoto (Tokyo, JP)

Assignee: STANLEY ELECTRIC CO., LTD.

H01S5/18361H01S5/0655H01S5/1071H01S5/18308H01S5/18341H01S5/3095H01S5/34333H01S2301/18

Abstract

Claims (37)

1. A vertical cavity surface emitting device comprising:

a substrate;

a first multilayer film reflecting mirror formed on the substrate;

a light-emitting structure layer that is formed on the first multilayer film reflecting mirror and includes a light-emitting layer; and

a second multilayer film reflecting mirror formed on the light-emitting structure layer, a resonator being constituted between the second multilayer film reflecting mirror and the first multilayer film reflecting mirror,

wherein:

the light-emitting structure layer includes a low resistance region and a high resistance region, the low resistance region is disposed in a ring shape between the first multilayer film reflecting mirror and the second multilayer film reflecting mirror, and the high resistance region is formed inside the low resistance region and has an electrical resistance higher than an electrical resistance of the low resistance region,

the resonator includes a ring-shaped region, a central region, and an outer region, the ring-shaped region corresponds to the low resistance region of the light-emitting structure layer and extends between the first and the second multilayer film reflecting mirrors, the central region is disposed corresponding to the high resistance region inside the ring-shaped region, and the outer region is disposed outside the ring-shaped region,

the central region and the outer region have equivalent refractive indexes lower than an equivalent refractive index of the ring-shaped region, and

the high resistance region inside the low resistance region has a width twice or more of a diffusion length of carriers in the light-emitting layer.

2. The vertical cavity surface emitting device according to claim 1 , wherein when a wavelength of light emitted from the light-emitting layer is defined as a wavelength λ, the equivalent refractive index of the ring-shaped region relative to the wavelength λ is defined as a refractive index nλ, and the equivalent refractive index of the ring-shaped region relative to a wavelength at 445 nm is defined as a refractive index n 445 , a width W 1 of the low resistance region meets a relationship

W 1≥2.85×(λ/0.445)×( nλ/n 445 ) [μm].

3. The vertical cavity surface emitting device according to claim 1 , wherein:

the light-emitting structure layer includes a first semiconductor layer, the light-emitting layer, and a second semiconductor layer, the first semiconductor layer is formed on the first multilayer film reflecting mirror, the light-emitting layer is formed on the first semiconductor layer, and the second semiconductor layer is formed on the light-emitting layer and has a conductivity type opposite to a conductivity type of the first semiconductor layer,

the second semiconductor layer includes an ion implanted region into which ions have been implanted as a region other than the ring-shaped region, and

the second semiconductor layer includes a region into which the ions are not implanted as the ring-shaped region corresponding to the low resistance region.

4. The vertical cavity surface emitting device according to claim 1 , wherein:

the light-emitting structure layer includes a first semiconductor layer, the light-emitting layer, and a second semiconductor layer, the first semiconductor layer is formed on the first multilayer film reflecting mirror, the light-emitting layer is formed on the first semiconductor layer, and the second semiconductor layer is formed on the light-emitting layer and has a conductivity type opposite to a conductivity type of the first semiconductor layer,

the second semiconductor layer includes an inactivated region where impurities have been inactivated as a region other than the ring-shaped region, and

the second semiconductor layer includes a region where the impurities are not inactivated as the ring-shaped region corresponding to the low resistance region.

5. The vertical cavity surface emitting device according to claim 1 , wherein the light-emitting structure layer includes a first semiconductor layer, the light-emitting layer, a second semiconductor layer, and a tunnel junction layer, the first semiconductor layer is formed on the first multilayer film reflecting mirror, the light-emitting layer is formed on the first semiconductor layer, the second semiconductor layer is formed on the light-emitting layer and has a conductivity type opposite to a conductivity type of the first semiconductor layer, and the tunnel junction layer is formed on the second semiconductor layer in the ring-shaped region corresponding to the low resistance region.

6. The vertical cavity surface emitting device according to claim 1 , wherein the ring-shaped region has one of a circular ring shape, a rectangular ring shape, and a ring shape surrounding a cross when viewed from a direction perpendicular to an upper surface of the light-emitting structure layer.

7. The vertical cavity surface emitting device according to claim 1 , wherein the light-emitting structure layer includes a plurality of semiconductor layers made of nitride semiconductor.

8. A vertical cavity surface emitting device comprising:

a substrate;

a first multilayer film reflecting mirror formed on the substrate;

a light-emitting structure layer that is formed on the first multilayer film reflecting mirror and includes a light-emitting layer; and

a second multilayer film reflecting mirror formed on the light-emitting structure layer, a resonator being constituted between the second multilayer film reflecting mirror and the first multilayer film reflecting mirror,

wherein:

the light-emitting structure layer includes a low resistance region and a high resistance region, the low resistance region is disposed in a ring shape between the first multilayer film reflecting mirror and the second multilayer film reflecting mirror, and the high resistance region is formed inside the low resistance region and has an electrical resistance higher than an electrical resistance of the low resistance region,

the resonator includes a ring-shaped region, a central region, and an outer region, the ring-shaped region corresponds to the low resistance region of the light-emitting structure layer and extends between the first and the second multilayer film reflecting mirrors, the central region is disposed corresponding to the high resistance region inside the ring-shaped region, and the outer region is disposed outside the ring-shaped region,

the central region and the outer region have equivalent refractive indexes lower than an equivalent refractive index of the ring-shaped region,

the light-emitting structure layer includes a first semiconductor layer, the light-emitting layer, and a second semiconductor layer, the first semiconductor layer is formed on the first multilayer film reflecting mirror, the light-emitting layer is formed on the first semiconductor layer, and the second semiconductor layer is formed on the light-emitting layer and has a conductivity type opposite to a conductivity type of the first semiconductor layer,

the second semiconductor layer includes an upper surface and a projection, the projection projecting from the upper surface in the ring-shaped region,

the upper surface of the second semiconductor layer functions as the high resistance region by being covered with an insulating layer,

the projection of the second semiconductor layer contacts an electrode to function as the low resistance region, and

the second semiconductor layer has a layer thickness twice or less of a diffusion length of carriers in the light-emitting layer.

Assignments (1)

Priority Claims (1)

Continuity (1)

References Cited (123)