Method for producing bonded object and semiconductor device and copper bonding paste
An embodiment of the present invention provides a method for producing a bonded object. The method comprises a step for preparing a laminate in which a first member, a copper bonding paste, and a second member are laminated in order and a step for sintering the copper bonding paste under a pressure of 0.1-1 MPa. The copper bonding paste contains metal particles and a dispersion medium, wherein the content of metal particles is at 50 mass % or more with respect to the total mass of the copper bonding paste, and the metal particles contain 95 mass % or more of submicro copper particles with respect to the total mass of the metal particles.
1. A method for producing a bonded object, comprising:
a step of preparing a laminate in which a first member, a copper bonding paste, and a second member are laminated in order; and
a step of sintering the copper bonding paste under a pressure of 0.1 to 1 MPa,
wherein the copper bonding paste contains metal particles and a dispersion medium,
a content of the metal particles with respect to a total mass of the copper bonding paste is 50 mass % or more, and
the metal particles contain 95 mass % or more of submicro copper particles having a volume average particle size of 0.12 μm or more and 0.8 μm or less with respect to a total mass of the metal particles.
2. A method for producing a semiconductor device, comprising:
a step of preparing a laminate in which a first member, a copper bonding paste, and a second member are laminated in order; and
a step of sintering the copper bonding paste under a pressure of 0.1 to 1 MPa,
wherein at least one of the first member and the second member is a semiconductor element,
the copper bonding paste contains metal particles and a dispersion medium,
a content of the metal particles with respect to a total mass of the copper bonding paste is 50 mass % or more, and
the metal particles contain 95 mass % or more of submicro copper particles having a volume average particle size of 0.12 μm or more and 0.8 μm or less with respect to a total mass of the metal particles.
3. A copper bonding paste comprising metal particles and a dispersion medium,
wherein a content of the metal particles with respect to a total mass of the copper bonding paste is 50 mass % or more, and
the metal particles contain 95 mass % or more of submicro copper particles having a volume average particle size of 0.12 μm or more and 0.8 μm or less with respect to a total amount of the metal particles.
4. The copper bonding paste according to claim 3 ,
wherein the metal particles contain 5 mass % or less of micro copper particles with respect to a total mass of the metal particles.
5. The copper bonding paste according to claim 3 ,
wherein a viscosity of the copper bonding paste at 25° C. is 0.8 to 40,000 Pa·s.
6. The copper bonding paste according to claim 3 ,
wherein the dispersion medium is at least one selected from the group consisting of alcohols and ethers.
7. The copper bonding paste according to claim 3 ,
wherein an aspect ratio of the submicro copper particles is 5 or less.
8. The method according to claim 1 ,
wherein the step of sintering the copper bonding paste is conducted under a pressure of 0.1 to 0.8 MPa.
9. The method according to claim 2 ,
wherein the step of sintering the copper bonding paste is conducted under a pressure of 0.1 to 0.8 MPa.