Palladium-coated copper bonding wire and method for manufacturing same
There is provided a palladium-coated copper bonding wire that does not cause a shrinkage cavity during first bonding, has high bonding reliability, and is capable of maintaining excellent bonding reliability for a long period of time even in high-temperature and high-humidity environments. A palladium-coated copper bonding wire in which a concentration of palladium is 1.0 mass % or more and 4.0 mass % or less relative to the total of copper, palladium, and a sulfur group element, a total concentration of the sulfur group element is 50 mass ppm or less, and a concentration of sulfur is 5 mass ppm or more and 12 mass ppm or less, a concentration of selenium is 5 mass ppm or more and 20 mass ppm or less, or a concentration of tellurium is 15 mass ppm or more and 50 mass ppm or less, and the palladium-coated copper bonding wire including a palladium-concentrated region with the average concentration of palladium of 6.5 atom % or more and 30.0 atom % or less relative to the total of copper and palladium within a range from a surface of a tip portion of a free air ball formed at a tip of the wire to 5.0 nm or more and 100.0 nm or less.
1. A palladium-coated copper bonding wire containing 50 mass ppm or less of sulfur group element in total, the palladium-coated copper bonding wire comprising:
a core material containing copper as a main component; and
a palladium layer on the core material, wherein
the sulfur group element includes at least one of:
5 mass ppm or more and 12 mass ppm or less of sulfur (S);
5 mass ppm or more and 20 mass ppm or less of selenium (Se); and
15 mass ppm or more and 50 mass ppm or less of tellurium (Te),
a concentration of palladium is 1.0 mass % or more and 4.0 mass % or less relative to the total of copper, palladium, and the sulfur group element of the palladium-coated copper bonding wire, and
a palladium-concentrated region in a free air ball formed at a tip of the palladium-coated copper bonding wire that has an average concentration of palladium of 6.5 atom % or more and 30.0 atom % or less relative to the total of copper and palladium that is within a range from a surface of a tip portion of the free air ball to 5.0 nm or more and 100.0 nm or less.
2. The palladium-coated copper bonding wire according to claim 1 , wherein
a concentration of palladium derived from the palladium layer is 1.0 mass % or more and 2.5 mass % or less relative to the total of copper, palladium, and the sulfur group element of the palladium-coated copper bonding wire.
3. The palladium-coated copper bonding wire according to claim 1 , wherein a diameter of the palladium-coated copper bonding wire is 10 μm or more and 30 μm or less.
4. The palladium-coated copper bonding wire according to claim 1 , wherein free air ball forming conditions when detecting the palladium-concentrated region are that a discharge current value is 65 mA and a diameter of the ball is 1.8 times the diameter of the wire, in the presence of a mixed gas of nitrogen and hydrogen.
5. The palladium-coated copper bonding wire according to claim 1 , wherein
the concentration of palladium of the palladium-concentrated region is a concentration measured under Auger electron spectroscopy analysis conditions where an acceleration voltage of a primary electron beam is 10 kV, a measurement region calculated from a set value is 15 μm 2 or more and 20 μm 2 or less, an acceleration voltage of argon ion sputtering is 1 kV, and a sputtering rate is 2.5 nm/min (in terms of SiO 2 ) as setting conditions of a device.
6. The palladium-coated copper bonding wire according to claim 1 , wherein 50.0% or more of the sulfur group element is contained in the palladium layer.
7. The palladium-coated copper bonding wire according to claim 1 , wherein
50.0% or more of the sulfur group element is contained between a surface of the palladium-coated copper bonding wire and a place with 50.0 atom % of palladium relative to the total of palladium and copper.
8. The palladium-coated copper bonding wire according to claim 1 , further comprising:
a gold layer on a surface of the palladium layer.
9. The palladium-coated copper bonding wire according to claim 1 , wherein
a concentration of sulfur (S) in the entire palladium-coated copper bonding wire is 6 mass ppm or more and 10 mass ppm or less.
10. The palladium-coated copper bonding wire according to claim 1 , wherein
a concentration of selenium (Se) in the entire palladium-coated copper bonding wire is 6 mass ppm or more and 15 mass ppm or less.
11. The palladium-coated copper bonding wire according to claim 1 , wherein
a concentration of tellurium (Te) in the entire palladium-coated copper bonding wire is 16 mass ppm or more and 45 mass ppm or less.
12. A method of manufacturing a palladium-coated copper bonding wire containing 50 mass ppm or less of sulfur group element in total, the palladium-coated copper bonding wire including: a core material containing copper as a main component; and a palladium layer on the core material, wherein
the sulfur group element includes at least one of:
5 mass ppm or more and 12 mass ppm or less of sulfur (S);
5 mass ppm or more and 20 mass ppm or less of selenium (Se); and
15 mass ppm or more and 50 mass ppm or less of tellurium (Te),
a concentration of palladium is 1.0 mass % or more and 4.0 mass % or less relative to the total of copper, palladium, and the sulfur group element, and
the manufacturing method comprising:
preparing a copper wire rod containing copper as a main component and
forming a palladium layer containing the sulfur group element on a surface of the copper wire rod.